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Author Maslennikov, S. url  openurl
  Title RF heating efficiency of the terahertz superconducting hot-electron bolometer Type Journal Article
  Year 2014 Publication arXiv Abbreviated Journal arXiv  
  Volume (down) 1404.5276 Issue Pages 1-4  
  Keywords superconducting hot-electron bolometer mixer, HEB, NbN, distributed model, HEB model, HEB mixer model, heat balance equa-tions, conversion gain, RF heating efficiency, noise temperature, simulation, Euler method  
  Abstract We report results of the numerical solution by the Euler method of the system of heat balance equations written in recurrent form for the superconducting hot-electron bolometer (HEB) embedded in an electrical circuit. By taking into account the dependence of the HEB resistance on the transport current we have been able to calculate rigorously the RF heating efficiency, absorbed local oscillator (LO) power and conversion gain of the HEB mixer. We show that the calculated conversion gai nis in excellent agreement with the experimental results, and that the substitution of the calculated RF heating efficiency and absorbed LO power into the expressions for the conversion gain and noise temperature given by the analytical small-signal model of the HEB yields excellent agreement with the corresponding measured values  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ atomics90 @ Serial 954  
Permanent link to this record
 
 
Author Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Lubenchenko, A. V.; Morozov, P. V.; Shurkaeva, I. V.; Smirnov, K. V. url  doi
openurl 
  Title Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume (down) 1124 Issue Pages 051030  
  Keywords SSPD, SNSPD, VN  
  Abstract We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1228  
Permanent link to this record
 
 
Author Romanov, N. R.; Zolotov, P. I.; Vakhtomin, Y. B.; Divochiy, A. V.; Smirnov, K. V. url  doi
openurl 
  Title Electron diffusivity measurements of VN superconducting single-photon detectors Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume (down) 1124 Issue Pages 051032  
  Keywords SSPD, SNSPD, VN  
  Abstract The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1229  
Permanent link to this record
 
 
Author Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Seleznev, V. A.; Smirnov, K. V. url  doi
openurl 
  Title Development of high-effective superconducting single-photon detectors aimed for mid-IR spectrum range Type Conference Article
  Year 2017 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume (down) 917 Issue Pages 062037  
  Keywords NbN SSPD, SNSPD  
  Abstract We report on development of superconducting single-photon detectors (SSPD) with high intrinsic quantum efficiency in the wavelength range 1.31 – 3.3 μm. By optimization of the NbN film thickness and its compound, we managed to improve detection efficiency of the detectors in the range up to 3.3 μm. Optimized devices showed intrinsic quantum efficiencies as high as 10% at mid-IR range.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1233  
Permanent link to this record
 
 
Author Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. url  doi
openurl 
  Title Influence of deposited material energy on superconducting properties of the WSi films Type Conference Article
  Year 2020 Publication IOP Conf. Ser.: Mater. Sci. Eng. Abbreviated Journal IOP Conf. Ser.: Mater. Sci. Eng.  
  Volume (down) 781 Issue Pages 012013 (1 to 6)  
  Keywords WSi SSPD, SNSPD  
  Abstract WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1757-899X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1798  
Permanent link to this record
 
 
Author Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K. url  doi
openurl 
  Title Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range Type Conference Article
  Year 2020 Publication IOP Conf. Ser.: Mater. Sci. Eng. Abbreviated Journal IOP Conf. Ser.: Mater. Sci. Eng.  
  Volume (down) 781 Issue Pages 012011 (1 to 5)  
  Keywords WSi, NbN SSPD, SNSPD  
  Abstract Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1757-899X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1799  
Permanent link to this record
 
 
Author Seleznev, V. A.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Zolotov, P. I.; Vasil'ev, D. D.; Moiseev, K. M.; Malevannaya, E. I.; Smirnov, K. V. url  doi
openurl 
  Title Superconducting detector of IR single-photons based on thin WSi films Type Conference Article
  Year 2016 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume (down) 737 Issue Pages 012032  
  Keywords WSi SSPD, SNSPD, NEP  
  Abstract We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1235  
Permanent link to this record
 
 
Author Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. url  doi
openurl 
  Title Electron–phonon interaction in disordered conductors Type Journal Article
  Year 1999 Publication Phys. Rev. B Condens. Matter Abbreviated Journal Phys. Rev. B Condens. Matter  
  Volume (down) 263-264 Issue Pages 190-192  
  Keywords disordered conductors, electron-phonon interaction  
  Abstract The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1765  
Permanent link to this record
 
 
Author Lobanov, Y. V.; Vakhtomin, Y. B.; Pentin, I. V.; Khabibullin, R. A.; Shchavruk, N. V.; Smirnov, K. V.; Silaev, A. A. url  doi
openurl 
  Title Characterization of the THz quantum cascade laser using fast superconducting hot electron bolometer Type Journal Article
  Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume (down) 195 Issue Pages 04004 (1 to 2)  
  Keywords NbN HEB, QCL  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference 3rd International Conference “Terahertz and Microwave Radiation: Generation, Detection and Applications” (TERA-2018)  
  Notes Approved no  
  Call Number Serial 1808  
Permanent link to this record
 
 
Author Sergeev, A. V.; Livanov, D. V. url  doi
openurl 
  Title Phonon renormalization of thermoelectric power of high-Tc materials Type Conference Article
  Year 1993 Publication Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences  
  Volume (down) 112 Issue Pages 204-205  
  Keywords HTS, YBCO  
  Abstract Renormalization of thermoelectric power due to Nielsen — Taylor effect (interference between electron-phonon and electron- impurity interactions) is used for the explanation of the temperature dependence and sign of the thermopower in high-Tc materials. In the framework of the model the negative sign of TEP of untwinned YBa2Cu3O7−x crystal in a-direction observed by Howson et. al. is connected to the strong hole scattering via O-vacancies in chains.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992  
  Notes Approved no  
  Call Number Serial 1664  
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