Bibliography database of Radiophysics Laboratory (RpLab) -- Query Results

	Bibliography database of Radiophysics Laboratory (RpLab) Home \| Show All \| Simple Search \| Advanced Search	Login Quick Search: Field: contains: ...
	31-40 of 423 records found matching your query:

Search & Display Options

Select All Deselect All

<< 1 2 3 4 5 6 7 8 9 10 >> [11–20]

List View

Citations

Details

	Records
	Author	Семенов, Александр Владимирович
	Title	Проскальзывание фазы, поглощение электромагнитного излучения и формирование отклика в детекторах на основе узких полосок сверхпроводников			Type	Manuscript
	Year	2010	Publication	М. МПГУ	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	SSPD, SNSPD, response
	Abstract
	Address
	Corporate Author				Thesis	Ph.D. thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1150
Permanent link to this record



	Author	Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M.
	Title	Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method			Type	Conference Article
	Year	2016	Publication	Proc. 27^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal
	Volume		Issue		Pages	30-32
	Keywords	NbN HEB, GaN buffer layer
	Abstract	In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1202
Permanent link to this record



	Author	Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W.
	Title	Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits: supplementary material			Type	Miscellaneous
	Year	2017	Publication	Optica	Abbreviated Journal
	Volume		Issue		Pages	1-9
	Keywords	Quantum detectors; Spectrometers and spectroscopic instrumentation; Nanophotonics and photonic crystals; Fluorescence correlation spectroscopy; Fluorescence resonance energy transfer; Fluorescence spectroscopy; Imaging techniques; Optical components; Quantum key distribution
	Abstract	This document provides supplementary information to “Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits", DOI:10.1364/optica.4.000557. Here we detail the on-chip spectrometer design, its characterization and the experimental setup we used. In addition, we present a detailed report concerning the characterization of the superconducting nanowire single photon detectors. In the final sections, we describe sample preparation and characterization of the nanodiamonds containing silicon vacancy color centers.
	Address
	Corporate Author				Thesis
	Publisher	Osa	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	Kahl:17			Serial	1218
Permanent link to this record



	Author	Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Moshkova, M.; Morozov, P.; Seleznev, V.; Smirnov, K.
	Title	Photon-number-resolving SSPDs with system detection efficiency over 50% at telecom range			Type	Conference Article
	Year	2018	Publication	Proc. AIP Conf.	Abbreviated Journal
	Volume	1936	Issue	1	Pages	020019
	Keywords	NbN PNR SSPD, SNSPD
	Abstract	We used technology of making high-efficiency superconducting single-photon detectors as a basis for improvement of photon-number-resolving devices. By adding optical cavity and using an improved NbN superconducting film, we enhanced previously reported system detection efficiency at telecom range for such detectors. Our results show that implementation of optical cavity helps to develop four-section device with quantum efficiency over 50% at 1.55 µm. Performed experimental studies of detecting multi-photon optical pulses showed irregularities over defining multi-photon through single-photon quantum efficiency.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	doi:10.1063/1.5025457			Serial	1231
Permanent link to this record



	Author	Fiore, A.; Marsili, F.; Bitauld, D.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G.
	Title	Counting photons using a nanonetwork of superconducting wires			Type	Conference Article
	Year	2009	Publication	Nano-Net	Abbreviated Journal
	Volume		Issue		Pages	120-122
	Keywords	SSPD, SNSPD
	Abstract	We show how the parallel connection of photo-sensitive superconducting nanowires can be used to count the number of photons in an optical pulse, down to the single-photon level. Using this principle we demonstrate photon-number resolving detectors with unprecedented sensitivity and speed at telecommunication wavelengths.
	Address
	Corporate Author				Thesis
	Publisher	Springer Berlin Heidelberg	Place of Publication	Berlin, Heidelberg	Editor	Cheng, M.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	978-3-642-02427-6	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	10.1007/978-3-642-02427-6_20			Serial	1242
Permanent link to this record



	Author	Zolotov, P.; Vakhtomin, Yu.; Divochiy, A.; Seleznev, V.; Morozov, P.; Smirnov, K.
	Title	High-efficiency single-photon detectors based on NbN films			Type	Miscellaneous
	Year	2013	Publication		Abbreviated Journal
	Volume		Issue		Pages
	Keywords	SSPD, SNSPD
	Abstract	We present our resent results in development and testing of Superconducting Single-Photon Detectors (SSPD) with detection efficiencies greater than 85%. High values of obtained results are assigned to proposed design of the detector with integrated resonator structure, including two-layer optical cavity and anti-reflective coating (ARC).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Poster			Approved	no
	Call Number				Serial	1254
Permanent link to this record



	Author	Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Room temperature silicon detector for IR range coated with Ag₂S quantum dots			Type	Conference Article
	Year	2019	Publication	IRMMW-THz	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	Ag2S quantum dots
	Abstract	A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2162-2035	ISBN	978-1-5386-8285-2	Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	8874267			Serial	1286
Permanent link to this record



	Author	Korneeva, Y. P.; Vodolazov, D. Y.; Semenov, A. V.; Florya, I. N.; Simonov, N.; Baeva, E.; Korneev, A. A.; Goltsman, G. N.; Klapwijk, T. M.
	Title	Optical single photon detection in micron-scaled NbN bridges			Type	Miscellaneous
	Year	2018	Publication	arXiv	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	SSPD
	Abstract	We demonstrate experimentally that single photon detection can be achieved in micron-wide NbN bridges, with widths ranging from 0.53 μm to 5.15 μm and for photon-wavelengths from 408 nm to 1550 nm. The microbridges are biased with a dc current close to the experimental critical current, which is estimated to be about 50 % of the theoretically expected depairing current. These results offer an alternative to the standard superconducting single-photon detectors (SSPDs), based on nanometer scale nanowires implemented in a long meandering structure. The results are consistent with improved theoretical modelling based on the theory of non-equilibrium superconductivity including the vortex-assisted mechanism of initial dissipation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1303			Approved	no
	Call Number				Serial	1312
Permanent link to this record



	Author	Korneev, A.; Semenov, A.; Vodolazov, D.; Gol’tsman, G. N.; Sobolewski, R.
	Title	Physics and operation of superconducting single-photon devices			Type	Book Chapter
	Year	2017	Publication	Superconductors at the Nanoscale	Abbreviated Journal
	Volume		Issue		Pages	279-308
	Keywords
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	De Gruyter	Place of Publication		Editor	Wördenweber, R.; Moshchalkov, V.; Bending, S.; Tafuri, F.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1326
Permanent link to this record



	Author	Arutyunov, K. Y.; Ramos-Álvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol’tsman, G. N.
	Title	Quasi-1-dimensional superconductivity in highly disordered NbN nanowires			Type	Miscellaneous
	Year	2016	Publication	arXiv	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	narrow NbN nanowires, BCS
	Abstract	The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the superconducting gap and the pairing potential. Here we report experimental study of electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. We find that conventional models based on phase slip concept provide reasonable fits for the shape of the R(T) transition curve. Temperature dependence of the critical current follows the text-book Ginzburg-Landau prediction for quasi-one-dimensional superconducting channel Ic~(1-T/Tc)^3/2. Hence, one may conclude that the intrinsic electronic inhomogeneity either does not exist in our structures, or, if exist, does not affect their resistive state properties.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1332			Approved	no
	Call Number				Serial	1338
Permanent link to this record