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	Author	Seleznev, V. A.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Zolotov, P. I.; Vasil'ev, D. D.; Moiseev, K. M.; Malevannaya, E. I.; Smirnov, K. V.
	Title	Superconducting detector of IR single-photons based on thin WSi films			Type	Conference Article
	Year	2016	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	737	Issue		Pages	012032
	Keywords	WSi SSPD, SNSPD, NEP
	Abstract	We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1235
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	Author	Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R.
	Title	New generation of superconducting nanowire single-photon detectors			Type	Conference Article
	Year	2015	Publication	EPJ Web of Conferences	Abbreviated Journal	EPJ Web of Conferences
	Volume	103	Issue		Pages	01006 (1 to 2)
	Keywords	SSPD, SNSPD
	Abstract	We present an overview of recent results for new generation of infrared and optical superconducting nanowire single-photon detectors (SNSPDs) that has already demonstrated a performance that makes them devices-of-choice for many applications. SNSPDs provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, SNSPDs are also compatible with an integrated optical platform as a crucial requirement for applications in emerging quantum photonic technologies. By embedding SNSPDs in nanophotonic circuits we realize waveguide integrated single photon detectors which unite all desirable detector properties in a single device.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1349
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	Author	Florya, I. N.; Korneeva, Y. P.; Sidorova, M. V.; Golikov, A. D.; Gaiduchenko, I. A.; Fedorov, G. E.; Korneev, A. A.; Voronov, B. M.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R.
	Title	Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs			Type	Conference Article
	Year	2015	Publication	EPJ Web of Conferences	Abbreviated Journal	EPJ Web of Conferences
	Volume	103	Issue		Pages	10004 (1 to 2)
	Keywords	SSPD, SNSPD
	Abstract	We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1351
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	Author	Semenov, A.; Richter, H.; Hübers, H.-W.; Petrenko, D.; Tretyakov, I.; Ryabchun, S.; Finkel, M.; Kaurova, N.; Gol’tsman, G.; Risacher, C.; Ricken, O.; Güsten, R.
	Title	Optimization of the intermediate frequency bandwidth in the THz HEB mixers			Type	Abstract
	Year	2014	Publication	Proc. 25^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 25^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	54
	Keywords	NbN HEB mixer
	Abstract	We report on the studies of the intermediate frequency (IF) bandwidth of quasi-optically coupled NbN hot-electron bolometer (HEB) mixers which are aimed at the optimization of the mixer performance at terahertz frequencies. Extension of the IF bandwidth due to the contribution of electron diffusion to the heat removal from NbN microbolometers has been already demonstrated for NbN HEBs at subterahertz frequencies. However, reducing the size of the microbolometer causes degradation of the noise temperature. Using in-situ multilayer manufacturing process we succeeded to improve the transparency of the contacts for electrons which go away from microbolometer to the metallic antenna. The improved transparency and hence coupling efficiency counterbalances the noise temperature degradation. HEB mixers were tested in a laboratory heterodyne receiver with a narrow-band cold filter which allowed us to eliminate direct detection. We used a local oscillator with a quantum cascade laser (QCL) at a frequency of 4.745 THz [1] which was developed for the H-Channel of the German Receiver for Astronomy at Terahertz frequencies (GREAT). Both the noise and gain bandwidth were measured in the IF range from 0.5 to 8 GHz using the hot-cold technique and preliminary calibrated IF analyzer with a tunable microwave filter. For optimized HEB geometry we found the noise bandwidth as large as 7 GHz. We compare our results with the conventional and the hot-spot mixer models and show that further extension of the IF bandwidth should be possible via improving the sharpness of the superconducting transition. The cross characterization of the HEB mixer was performed in the test bed of GREAT at the Max-Planck-Institut für Radioastronomie with the same QCL LO and delivered results which were consistent with the laboratory studies.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1359
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	Author	Лесс, Ю. А.; Кирсанов, Ю. А.
	Title	Былое и думы. Посвящение эпохе Н. Н. Малова, Е. М. Гершензона, В. С. Эткина			Type	Miscellaneous
	Year	2015	Publication	ПРФЛ	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	физфак МПГУ, физфак МГПИ, ПРФЛ
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1132
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	Author	Флоря, И. Н.
	Title	Ультрабыстрый однофотонный детектор для оптических применений			Type	Conference Article
	Year	2009	Publication	Науч. сессия МИФИ	Abbreviated Journal	Науч. сессия МИФИ
	Volume		Issue		Pages	45-46
	Keywords	SSPD
	Abstract	Представлен сверхпроводниковый однофотонный детектор (SSPD) на основе ультратонкой пленки NbN, обладающий рекордным быстродействием. Активный элемент выполнен в виде N сверхпроводящих полосок соединенных параллельно, покрывающих площадку размером 10 мкм х 10 мкм. Для SSPD с N=12 длительность импульса напряжения составляет 200 пс. Полученные результаты открывают путь к детекторам обладающими скоростью счета свыше 1 ГГц, что делает SSPDs весьма привлекательными во многих применениях, в частности для квантовой криптографии. SSPD хорошо согласуется с оптоволокном и легко может быть интегрирован в полностью готовую для работы приемную систему.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-7262-1042-1	Medium
	Area		Expedition		Conference
	Notes	УДК 533.14(06)+004.056(06) Фотоника и информационная оптика			Approved	no
	Call Number				Serial	1145
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	Author	Семенов, Александр Владимирович
	Title	Проскальзывание фазы, поглощение электромагнитного излучения и формирование отклика в детекторах на основе узких полосок сверхпроводников			Type	Manuscript
	Year	2010	Publication	М. МПГУ	Abbreviated Journal
	Volume		Issue		Pages
	Keywords	SSPD, SNSPD, response
	Abstract
	Address
	Corporate Author				Thesis	Ph.D. thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1150
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	Author	Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G.
	Title	Planar Schottky diode with a Γ-shaped anode suspended bridge			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012154
	Keywords	Schottky diode, GaAs, InP substrate
	Abstract	In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1152
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	Author	Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G.
	Title	Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012156
	Keywords	Shottky diode, THz, direct detector, multipixel camera
	Abstract	In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1153
Permanent link to this record



	Author	Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Silicon room temperature IR detectors coated with Ag₂S quantum dots			Type	Conference Article
	Year	2019	Publication	Proc. IWQO	Abbreviated Journal	Proc. IWQO
	Volume		Issue		Pages	369-371
	Keywords	silicon detector, quantum dot, IR, surface states
	Abstract	For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-89513-451-1	Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1154
Permanent link to this record