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Manova, N. N.; Simonov, N. O.; Korneeva, Y. P.; Korneev, A. A. |
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Title |
Developing of NbN films for superconducting microstrip single-photon detector |
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Conference Article |
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Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1695 |
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Pages  |
012116 (1 to 5) |
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Keywords |
NbN SSPD, SNSPD, NbN films |
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Abstract |
We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20. |
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1742-6588 |
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1786 |
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Baksheeva, K.; Vdovydchenko, A.; Gorshkov, K.; Ozhegov, R.; Kinev, N.; Koshelets, V.; Goltsman, G. |
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Title |
Study of human skin radiation in the terahertz frequency range |
Type |
Conference Article |
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Year |
2019 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1410 |
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Pages |
012076 (1 to 5) |
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Keywords |
SIS mixer, SIR, applications, medicine, sympathetic nervous system, SNS |
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The radiation of human skin in the terahertz frequency range under the influence of mental stresses has been studied in the current work. An experimental setup for observation of changes in human skin radiation, which occur under the influence of psychological stresses, by means of a superconducting integrated receiver has been developed. More than 30 volunteers participate in these studies, which allows us to verify presence of correlation between the signals from the superconducting integrated terahertz receiver and other sensors that monitor human mental stress. |
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1742-6588 |
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1272 |
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Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
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Title |
Towards to the development of THz detectors based on carbon nanostructures |
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Conference Article |
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Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
1092 |
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012039 (1 to 4) |
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Keywords |
CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors |
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Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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1742-6588 |
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1302 |
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Seleznev, V. A.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Zolotov, P. I.; Vasil'ev, D. D.; Moiseev, K. M.; Malevannaya, E. I.; Smirnov, K. V. |
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Title |
Superconducting detector of IR single-photons based on thin WSi films |
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Conference Article |
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Year |
2016 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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Volume |
737 |
Issue |
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Pages |
012032 |
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Keywords |
WSi SSPD, SNSPD, NEP |
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We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP). |
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1742-6588 |
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1235 |
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Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
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Title |
Influence of deposited material energy on superconducting properties of the WSi films |
Type |
Conference Article |
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Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
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Volume |
781 |
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Pages |
012013 (1 to 6) |
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Keywords |
WSi SSPD, SNSPD |
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WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. |
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1757-899X |
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1798 |
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Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K. |
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Title |
Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range |
Type |
Conference Article |
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Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
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Volume |
781 |
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012011 (1 to 5) |
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Keywords |
WSi, NbN SSPD, SNSPD |
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Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm. |
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1799 |
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Florya, I. N.; Korneeva, Y. P.; Sidorova, M. V.; Golikov, A. D.; Gaiduchenko, I. A.; Fedorov, G. E.; Korneev, A. A.; Voronov, B. M.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
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Title |
Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs |
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Conference Article |
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Year |
2015 |
Publication |
EPJ Web of Conferences |
Abbreviated Journal |
EPJ Web of Conferences |
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Volume |
103 |
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10004 (1 to 2) |
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SSPD, SNSPD |
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We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model. |
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2100-014X |
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1351 |
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Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
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Title |
Response of graphene based gated nanodevices exposed to THz radiation |
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Conference Article |
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Year |
2015 |
Publication |
EPJ Web of Conferences |
Abbreviated Journal |
EPJ Web of Conferences |
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103 |
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10003 (1 to 2) |
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Keywords |
graphene field-effect transistor, FET |
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In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. |
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2100-014X |
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1350 |
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Elezov, M. S.; Ozhegov, R. V.; Kurochkin, Y. V.; Goltsman, G. N.; Makarov, V. S.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
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Title |
Countermeasures against blinding attack on superconducting nanowire detectors for QKD |
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Conference Article |
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Year |
2015 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
103 |
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10002 (1 to 2) |
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SSPD, SNSPD, QKD |
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Nowadays, the superconducting single-photon detectors (SSPDs) are used in Quantum Key Distribution (QKD) instead of single-photon avalanche photodiodes. Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing technique. We developed the autoreset system which returns the SSPD to superconducting state when it is latched. We investigate latched state of the SSPD and define limit conditions for effective blinding attack. Peculiarity of the blinding attack is a long nonsingle photon response of the SSPD. It is much longer than usual single photon response. Besides, we need follow up response duration of the SSPD. These countermeasures allow us to prevent blind attack on SSPDs for Quantum Key Distribution. |
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2100-014X |
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1352 |
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Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. |
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Title |
Response of carbon nanotube film transistor to the THz radiation |
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Conference Article |
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2018 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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Volume |
195 |
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05012 (1 to 2) |
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field-effect transistor, FET, carbon nanotube, CNT |
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2100-014X |
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1317 |
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