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Lusche, Robert; Semenov, Alexey; Huebers, Heinz-Willhelm; Ilin, Konstantin; Siegel, Michael; Korneeva, Yuliya; Trifonov, Andrey; Korneev, Alexander; Goltsman, Gregory |
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Title |
Effect of the wire geometry and an externally applied magnetic field on the detection efficiency of superconducting nanowire single-photon detectors |
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Abstract |
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Year |
2013 |
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Abbreviated Journal |
INIS |
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46 |
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8 |
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1-3 |
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Keywords |
TaN, NbN SSPD, SNSPD |
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Abstract |
The interest in single-photon detectors in the near-infrared wavelength regime for applications, e.g. in quantum cryptography has immensely increased in the last years. Superconducting nanowire single-photon detectors (SNSPD) already show quite reasonable detection efficiencies in the NIR which can even be further improved. Novel theoretical approaches including vortex-assisted photon counting state that the detection efficiency in the long wavelength region can be enhanced by the detector geometry and an applied magnetic field. We present spectral measurements in the wavelength range from 350-2500 nm of the detection efficiency of meander-type TaN and NbN SNSPD with varying nanowire line width from 80 to 250 nm. Due to the used experimental setup we can accurately normalize the measured spectra and are able to extract the intrinsic detection efficiency (IDE) of our detectors. The results clearly indicate an improvement of the IDE depending on the wire width according to the theoretic models. Furthermore we experimentally found that the smallest detectable photon-flux can be increased by applying a small magnetic field to the detectors. |
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1374 |
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Beck, Matthias; Leiderer, Paul; Kabanov, Viktor V.; Gol'tsman, Gregory; Helm, Manfred; Demsar, Jure |
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Title |
Energy-gap dynamics of a superconductor NbN studied by time-resolved terahertz spectroscopy |
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Year |
2012 |
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INIS |
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45 |
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12 |
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1-3 |
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Keywords |
NbN energy gap |
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Using time-resolved terahertz (THz) spectroscopy we performed direct studies of the photoinduced suppression and recovery of the SC gap in a conventional SC NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the important microscopic constants: the Cooper pair-breaking rate via phonon absorption and the bare quasiparticle recombination rate. From the latter we were able to extract the dimensionless electron-phonon coupling constant, λ=1.1±0.1, in excellent agreement with theoretical estimates. The technique also allowed us to determine the absorbed energy required to suppress SC, which in NbN equals the thermodynamic condensation energy (in cuprates the two differ by an order of magnitude). Finally, we present the first studies of dynamics following resonant excitation with intense narrow band THz pulses tuned to above and below the superconducting gap. These suggest an additional process, particularly pronounced near Tc, that could be attributed to amplification of SC via effective quasiparticle cooling. |
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1383 |
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Slysz, W.; Wegrzecki, M.; Papis, E.; Gol'tsman, G. N.; Verevkin, A.; Sobolewski, R. |
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Title |
A method of optimization of the NbN superconducting single-photon detector |
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Miscellaneous |
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2004 |
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INIS |
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Volume |
36 |
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27 |
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1-2 |
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NbN SSPD, SNSPD |
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5-th International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION |
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Reference num. 36060124 |
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1485 |
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Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gol'tsman, G. N.; Verevkin, M.; Sobolewski, R. |
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Title |
NbN superconducting single-photon detectors coupled with a communication fiber |
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Miscellaneous |
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2004 |
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Abbreviated Journal |
INIS |
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37 |
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2 |
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1-2 |
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Keywords |
NbN SSPD, SNSPD |
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Stare Jablonki, Poland |
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8-th Electron Technology Conference ELTE |
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no |
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1486 |
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Schubert, J.; Semenov, A.; Hübers, H.-W.; Gol'tsman, G.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
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Title |
Broad-band terahertz NbN hot-electron bolometric mixer |
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Conference Article |
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1999 |
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Inst. Phys. Conf. |
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Inst. Phys. Conf. |
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167 |
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663-666 |
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NbN HEB mixers |
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4th Europ. Conf. on Appl. Superconductivity, Barcelona, Spain, 14-17 September 1999 |
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no |
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1578 |
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Author |
Kroug, M.; Yagoubov, P.; Gol'tsman, G.; Kollberg, E. |
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Title |
NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies |
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Conference Article |
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1997 |
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Inst. Phys. Conf. Ser. |
Abbreviated Journal |
Inst. Phys. Conf. Ser. |
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1 |
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405-408 |
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NbN HEB mixers |
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Veldhoven |
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Bristol |
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0951-3248 |
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3rd Eur. Conf. on Applied Superconductivity |
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1600 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H. W.; Svechnikov, S.; Voronov, B.; Gol'tsman, G.; Wang, Z. |
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Hot electron bolometric mixers based on NbN films deposited on MgO substrates |
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Conference Article |
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1999 |
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Inst. Phys. Conf. Ser. |
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Inst. Phys. Conf. Ser. |
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167 |
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687-690 |
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Barcelona, Spain |
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4th Europ. Conf. on Appl. Superconductivity, Inst. Phys. Conf. Ser. |
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297 |
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Author |
Marsili, Francesco; Bitauld, David; Fiore, Andrea; Gaggero, Alessandro; Mattioli, Francesco; Leoni, Roberto; Divochiy, Aleksander; Gol'tsman, Gregory |
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Title |
Photon-number-resolution at telecom wavelength with superconducting nanowires |
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Miscellaneous |
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2010 |
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IntechOpen |
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SSPD, SNSPD |
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RPLAB @ sasha @ marsiliphoton |
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1036 |
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Author |
Rath, P.; Vetter, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Nebel, C.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. |
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Title |
Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps |
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Conference Article |
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2016 |
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Integrated Optics: Devices, Mat. Technol. XX |
Abbreviated Journal |
Integrated Optics: Devices, Mat. Technol. XX |
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9750 |
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135-142 |
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SSPD, Superconducting Nanowire Single-Photon Detector, SNSPD, Single Photon Detector, Diamond Photonics, Diamond Integrated Optics, Diamond Waveguides, Integrated Optics, Low Timing Jitter |
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We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps). |
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Spie |
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Broquin, J.-E.; Conti, G.N. |
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1210 |
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Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
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Title |
Influence of deposited material energy on superconducting properties of the WSi films |
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Conference Article |
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Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
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Volume |
781 |
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Pages |
012013 (1 to 6) |
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Keywords |
WSi SSPD, SNSPD |
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WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. |
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1757-899X |
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1798 |
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