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Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Limiting characteristic of fast superconducting bolometers |
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1989 |
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Sov. Phys.-Tech. Phys. |
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Sov. Phys.-Tech. Phys. |
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34 |
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195-199 |
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HEB |
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Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. |
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О предельных характеристиках быстродействующих серхпроводниковых болометров |
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237 |
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Гершензон, Е. М.; Гершензон, М. Е.; Гольцман, Г. Н.; Люлькин, А. М.; Семенов, А. Д.; Сергеев, А. В. |
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Title |
О предельных характеристиках быстродействующих серхпроводниковых болометров |
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1989 |
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Журнал технической физики |
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Журнал технической физики |
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59 |
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2 |
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111-120 |
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HEB |
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Abstract |
Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. |
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Russian |
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Duplicated as 237 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D. |
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Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state |
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1990 |
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Sov. Supercond. |
Abbreviated Journal |
Sov. Supercond. |
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3 |
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10 |
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1582-1597 |
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HEB mixers |
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240 |
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Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Electron-phonon interaction in ultrathin Nb films |
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Journal Article |
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1990 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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70 |
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3 |
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505-511 |
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Nb films |
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A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.
1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated. |
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241 |
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Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. |
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Title |
Broadband ultrafast superconducting NbN detector for electromagnetic radiation |
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Journal Article |
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1994 |
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J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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75 |
Issue |
7 |
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3695-3697 |
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Keywords |
NbN HEB |
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An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect. |
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252 |
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Semenov, Alexei; Richter, Heiko; Smirnov, Konstantin; Voronov, Boris; Gol'tsman, Gregory; Hübers, Heinz-Wilhelm |
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The development of terahertz superconducting hot-electron bolometric mixers |
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2004 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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17 |
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5 |
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436-439 |
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NbN HEB mixers |
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We present recent advances in the development of NbN hot-electron bolometric (HEB) mixers for flying terahertz heterodyne receivers. Three important issues have been addressed: the quality of the source NbN films, the effect of the bolometer size on the spectral properties of different planar feed antennas, and the local oscillator (LO) power required for optimal operation of the mixer. Studies of the NbN films with an atomic force microscope indicated a surface structure that may affect the performance of the smallest mixers. Measured spectral gain and noise temperature suggest that at frequencies above 2.5 THz the spiral feed provides better overall performance than the double-slot feed. Direct measurements of the optimal LO power support earlier estimates made in the framework of the uniform mixer model. |
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357 |
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Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. |
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Title |
Gain and noise bandwidth of NbN hot-electron bolometric mixers |
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1997 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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70 |
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24 |
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3296-3298 |
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NbN HEB mixers, conversion loss, conversion gain, U-factor technique |
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We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K. |
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279 |
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Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
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Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz |
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1999 |
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Supercond. Sci. Technol. |
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12 |
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11 |
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748-750 |
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NbN HEB mixers |
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We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz). |
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Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. |
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NbN hot electron bolometric mixers for terahertz receivers |
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2001 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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11 |
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1 |
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962-965 |
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NbN HEB mixers |
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Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two. |
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Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. |
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Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures |
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2001 |
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Appl. Phys. Lett. |
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79 |
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2049-2051 |
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HEB detector, FIR, far infrared |
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