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Bell, M.; Sergeev, A.; Mitin, V.; Bird, J.; Verevkin, A.; Gol'tsman, G. |
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One-dimensional resistive states in quasi-two-dimensional superconductors |
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2007 |
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arXiv:0709.0709v1 [cond-mat.supr-con] |
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1-11 |
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We investigate competition between one- and two-dimensional topological excitations – phase slips and vortices – in formation of resistive states in quasi-two-dimensional superconductors in a wide temperature range below the mean-field transition temperature T(C0). The widths w = 100 nm of our ultrathin NbN samples is substantially larger than the Ginzburg-Landau coherence length ξ = 4nm and the fluctuation resistivity above T(C0) has a two-dimensional character. However, our data shows that the resistivity below T(C0) is produced by one-dimensional excitations, – thermally activated phase slip strips (PSSs) overlapping the sample cross-section. We also determine the scaling phase diagram, which shows that even in wider samples the PSS contribution dominates over vortices in a substantial region of current/temperature variations. Measuring the resistivity within seven orders of magnitude, we find that the quantum phase slips can only be essential below this level. |
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RPLAB @ atomics90 @ |
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948 |
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Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G. |
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Title |
A microwave reflection readout scheme for hot electron bolometric direct detector |
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2015 |
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IEEE Trans. THz Sci. Technol. |
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IEEE Trans. THz Sci. Technol. |
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5 |
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81-84 |
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HEB detectors |
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In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout
scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications. |
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RPLAB @ atomics90 @ |
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950 |
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Lobanov, Y.; Shcherbatenko, M.; Finkel, M.; Maslennikov, S.; Semenov, A.; Voronov, B. M.; Rodin, A. V.; Klapwijk, T. M.; Gol'tsman, G. N. |
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Title |
NbN hot-electron-bolometer mixer for operation in the near-IR frequency range |
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2015 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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2300704 (1 to 4) |
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HEB mixer, IR, optical antenna |
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Traditionally, hot-electron-bolometer (HEB) mixers are employed for THz and “super-THz” heterodyne detection. To explore the near-IR spectral range, we propose a fiber-coupled NbN film based HEB mixer. To enhance the incident-light absorption, a quasi-antenna consisting of a set of parallel stripes of gold is used. To study the antenna effect on the mixer performance, we have experimentally studied a set of devices with different size of the Au stripe and spacing between the neighboring stripes. With use of the well-known isotherm technique we have estimated the absorption efficiency of the mixer, and the maximum efficiency has been observed for devices with the smallest pitch of the alternating NbN and NbN-Au stripes. Also, a proper alignment of the incident Eâƒ<2014>-field with respect to the stripes allows us to improve the coupling further. Studying IV-characteristics of the mixer under differently-aligned Eâƒ<2014>-field of the incident radiation, we have noticed a difference in their shape. This observation suggests that a difference exists in the way the two waves with orthogonal polarizations parallel and perpendicular Eâƒ<2014>-field to the stripes heat the electrons in the HEB mixer. The latter results in a variation in the electron temperature distribution over the HEB device irradiated by the two waves. |
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952 |
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Seliverstov, S.; Maslennikov, S.; Ryabchun, S.; Finkel, M.; Klapwijk, T. M.; Kaurova, N.; Vachtomin, Yu.; Smirnov, K.; Voronov, B.; Goltsman, G. |
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Title |
Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer |
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2015 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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2300304 |
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HEB detector responsivity, HEB model, numerical calculations, numerical model |
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We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter. |
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953 |
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Author |
Maslennikov, S. |
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Title |
RF heating efficiency of the terahertz superconducting hot-electron bolometer |
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2014 |
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arXiv |
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arXiv |
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1404.5276 |
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1-4 |
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superconducting hot-electron bolometer mixer, HEB, NbN, distributed model, HEB model, HEB mixer model, heat balance equa-tions, conversion gain, RF heating efficiency, noise temperature, simulation, Euler method |
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We report results of the numerical solution by the Euler method of the system of heat balance equations written in recurrent form for the superconducting hot-electron bolometer (HEB) embedded in an electrical circuit. By taking into account the dependence of the HEB resistance on the transport current we have been able to calculate rigorously the RF heating efficiency, absorbed local oscillator (LO) power and conversion gain of the HEB mixer. We show that the calculated conversion gai nis in excellent agreement with the experimental results, and that the substitution of the calculated RF heating efficiency and absorbed LO power into the expressions for the conversion gain and noise temperature given by the analytical small-signal model of the HEB yields excellent agreement with the corresponding measured values |
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RPLAB @ atomics90 @ |
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954 |
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Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G. |
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Local resistivity and the current-voltage characteristics of hot electron bolometer mixers |
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2005 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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15 |
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2 |
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495-498 |
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HEB mixer distributed model, HEB distributed model, distributed HEB model |
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Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling. |
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1051-8223 |
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980 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Heating of electrons in a superconductor in the resistive state by electromagnetic radiation |
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1984 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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59 |
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2 |
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442-450 |
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Nb HEB |
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The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction. |
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RPLAB @ phisix @ |
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Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
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Character of submillimeter photoconductivity in n-lnSb |
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1979 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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49 |
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1 |
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121-128 |
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A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). |
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RPLAB @ phisix @ |
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985 |
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Ptitsina N. G.; Chulkova G. M.; Il'in K. S.; Sergeev A. V.; Pochinkov F. S.; Gershenzon E. M. |
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Superconductivity has been found in a number of new compounds between the non-superconducting transition elements and nonmetals such as Si, Ge, and Te. These findings have suggested possible criteria for superconductivity in both elements and compounds. |
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1997 |
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Phys. Rev. B |
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Phys. Rev. B |
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56 |
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16 |
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The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path L=1.5– 10 nm has been measured at 4.2–300 K. The resistance of all the films contains a T^2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference „M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 ~1987! @Sov. Phys. JETP 65, 1291 ~1987!#…, we obtain constants of nteraction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electronphonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
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RPLAB @ phisix @ |
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988 |
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Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
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Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
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1995 |
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JETP |
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JETP |
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80 |
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960-964 |
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The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation. |
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