Records |
Author |
Akhmadishina, K. F.; Bobrinetskiy, I. I.; Komarov, I. A.; Malovichko, A. M.; Nevolin, V. K.; Fedorov, G. E.; Golovin, A. V.; Zalevskiy, A. O.; Aidarkhanov, R. D. |
Title |
Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers |
Type |
Journal Article |
Year |
2015 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
Volume |
49 |
Issue |
13 |
Pages |
1749-1753 |
Keywords |
carbon nanotubes, CNT detectors |
Abstract |
The possibility of the fabrication of a fast-response biological sensor based on a composite of single-layer carbon nanotubes and aptamers for the specific detection of proteins is shown. The effect of modification of the surface of the carbon nanotubes on the selectivity and sensitivity of the sensors is investigated. It is shown that carboxylated nanotubes have a better selectivity for detecting thrombin. |
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1063-7826 |
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1783 |
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Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Title |
Prospects for using high-temperature superconductors to create electron bolometers |
Type |
Journal Article |
Year |
1989 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Volume |
15 |
Issue |
14 |
Pages |
88-93 |
Keywords |
HTS HEB |
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Russian |
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0320-0116 |
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Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров |
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1693 |
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Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Title |
Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures |
Type |
Journal Article |
Year |
1989 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
50 |
Issue |
5 |
Pages |
283-286 |
Keywords |
YBCO HTS films |
Abstract |
The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs. |
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1690 |
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Aksaev, E. E.; Gershenzon, E.M.; Gol'tsman, G. N.; Mirskij, G. I.; Semenov, A. D. |
Title |
Submillimetric spectrometer-relaxometer based on backward-wave tubes with picosecond time resolution |
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Journal Article |
Year |
1991 |
Publication |
Pribory i Tekhnika Eksperimenta |
Abbreviated Journal |
Pribory i Tekhnika Eksperimenta |
Volume |
34 |
Issue |
2 |
Pages |
125-131 |
Keywords |
BWO, applications |
Abstract |
The high-sensitive automatic spectrometer-relaxometer based on backward-wave tubes in the range of 4÷0.25 mm was described permitting to study the response kinetics of sample under investigation in any point of this range with the resolution time of 10-11 s. The relaxation measurements were conducted using oscillation beats of two adequate tubes, the frequency of one of them was fixed, while that of the other one was changeable. The amplitude-frequency characteristic of the response under the conditions of synchronous reception was recorded at beat frequency variation from 107 to 1010 Hz. The high sensitivity was reached by decreasing the device recording band down to 100 Hz in the whole measuring range. |
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0032-8162 |
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1683 |
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Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. |
Title |
Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity |
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Journal Article |
Year |
2014 |
Publication |
Laser Phys. Lett. |
Abbreviated Journal |
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Volume |
11 |
Issue |
1 |
Pages |
015004 (1 to 4) |
Keywords |
HEB applications, HEB detector applications, short THz pulses detection |
Abstract |
We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. |
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no |
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1076 |
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Author |
Anosov, A. A.; Barabanenkov, Yu. N.; Kazanskii, A. S.; Less, Yu. A.; Sharakshane, A. S. |
Title |
The inverse problem of acoustothermography with correlation reception of thermal acoustic radiation |
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Journal Article |
Year |
2009 |
Publication |
Acoust. Phys. |
Abbreviated Journal |
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Volume |
55 |
Issue |
1 |
Pages |
114-119 |
Keywords |
acoustic thermography, acoustothermography |
Abstract |
For the one-dimensional inverse problem of acoustothermography with correlation reception of thermal acoustic radiation, an integral equation is presented and experimentally verified. A method of solving the inverse problem is proposed. The method is based on combining the correlation functions of thermal acoustic radiation that were obtained for different distances between the receivers. |
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1131 |
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Author |
Anosov, A. A.; Nemchenko, O. Yu.; Less, Yu. A.; Kazanskii, A. S.; Mansfel'd, A. D. |
Title |
Possibilities of acoustic thermometry for controlling targeted drug delivery |
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Journal Article |
Year |
2015 |
Publication |
Acoust. Phys. |
Abbreviated Journal |
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Volume |
61 |
Issue |
4 |
Pages |
488-493 |
Keywords |
acoustic thermometry, liposome suspension, thermography |
Abstract |
Model acoustic thermometry experiments were conducted during heating of an aqueous liposome suspension. Heating was done to achieve the liposome phase transition temperature. At the moment of the phase transition, the thermal acoustic signal achieved a maximum and decreased, despite continued heating. During subsequent cooling of the suspension, when lipids again passed through the phase transition point, the thermal acoustic signal again increased, despite a reduction in temperature. This effect is related to an increase in ultrasound absorption by the liposome suspension at the moment of the lipid phase transition. The result shows that acoustic thermography can be used to control targeted delivery of drugs mixed in thermally sensitive liposomes, the integrity of which is violated during heating to the phase transition temperature. |
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no |
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1130 |
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Author |
Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. |
Title |
Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz |
Type |
Journal Article |
Year |
2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
Volume |
9 |
Issue |
4 |
Pages |
242-245 |
Keywords |
NbN HEB mixers |
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1069-1227 |
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no |
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1550 |
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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
Title |
Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
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Journal Article |
Year |
2019 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
Volume |
32 |
Issue |
7 |
Pages |
075003 |
Keywords |
NbN HEB mixer, GaN buffer layer, sapphire substrate |
Abstract |
We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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Antipov_2019 |
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1277 |
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Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N. |
Title |
Superconductivity in highly disordered NbN nanowires |
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Journal Article |
Year |
2016 |
Publication |
Nanotechnol. |
Abbreviated Journal |
Nanotechnol. |
Volume |
27 |
Issue |
47 |
Pages |
47lt02 (1 to 8) |
Keywords |
NbN nanowires |
Abstract |
The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links. |
Address |
National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia |
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English |
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0957-4484 |
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PMID:27782000 |
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no |
Call Number |
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Serial |
1332 |
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Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. |
Title |
Thermal properties of NbN single-photon detectors |
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Journal Article |
Year |
2018 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
Volume |
10 |
Issue |
6 |
Pages |
064063 (1 to 8) |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices. |
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2331-7019 |
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1226 |
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Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. |
Title |
Universal bottleneck for thermal relaxation in disordered metallic films |
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Journal Article |
Year |
2020 |
Publication |
JETP Lett. |
Abbreviated Journal |
Jetp Lett. |
Volume |
111 |
Issue |
2 |
Pages |
104-108 |
Keywords |
NbN disordered metallic films, thermal relaxation |
Abstract |
We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors. |
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0021-3640 |
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no |
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1164 |
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Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. |
Title |
Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates |
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Journal Article |
Year |
2021 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
Volume |
15 |
Issue |
5 |
Pages |
054014 |
Keywords |
InOx, Au/Ni, NbN films |
Abstract |
We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics. |
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2331-7019 |
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1769 |
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Baksheeva, K.; Ozhegov, R.; Goltsman, G.; Kinev, N.; Koshelets, V.; Kochnev, A.; Betzalel, N.; Puzenko, A.; Ben Ishai, P.; Feldman, Y. |
Title |
The sub THz emission of the human body under physiological stress |
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Journal Article |
Year |
2021 |
Publication |
IEEE Trans. Terahertz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. Terahertz Sci. Technol. |
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skin sub-THz emission, medicine |
Abstract |
We present evidence that in the sub-THz frequency band, human skin can be considered as an electromagnetic bio-metamaterial, in that its natural emission is a product of skin tissue geometry and embedded structures. Radiometry was performed on 32 human subjects from 480 to 700 GHz. Concurrently, the subjects were exposed to stress, while heart pulse rate (PS) and galvanic skin response (GSR) were also measured. The results are substantially different from the expected black body radiation signal of the skin surface. PS and GSR correlate to the emissivity. Using a simulation model for the skin, we find that the sweat duct is a critical element. The simulated frequency spectra qualitatively match the measured emission spectra and show that our sub-THz emission is modulated by our level of mental stress. This opens avenues for the remote monitoring of the human state. |
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no |
Call Number |
9380570 |
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1259 |
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Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. |
Title |
Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors |
Type |
Journal Article |
Year |
2018 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
112 |
Issue |
14 |
Pages |
141101 (1 to 5) |
Keywords |
graphene field effect transistors, FET |
Abstract |
Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.
D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions. |
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0003-6951 |
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1309 |
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