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Author Lobanov, Yury; Shcherbatenko, Michael; Shurakov, Alexander; Rodin, Alexander V.; Klimchuk, Artem; Nadezhdinsky, Alexander I.; Maslennikov, Sergey; Larionov, Pavel; Finkel, Matvey; Semenov, Alexander; Verevkin, Aleksandr A.; Voronov, Boris M.; Ponurovsky, Yakov; Klapwijk, Teunis M.; Gol'tsman, Gregory N.
Title Heterodyne detection at near-infrared wavelengths with a superconducting NbN hot-electron bolometer mixer Type Journal Article
Year 2014 Publication Opt. Lett. Abbreviated Journal
Volume 39 Issue 6 Pages 1429-1432
Keywords HEB, zebra, IR, infrared
Abstract We report on the development of a highly sensitive optical receiver for heterodyne IR spectroscopy at the communication wavelength of 1.5 μm (200 THz) by use of a superconducting hot-electron bolometer. The results are important for the resolution of narrow spectral molecular lines in the near-IR range for the study of astronomical objects, as well as for quantum optical tomography and fiber-optic sensing. Receiver configuration as well as fiber-to-detector light coupling designs are discussed. Light absorption of the superconducting detectors was enhanced by nano-optical antennas, which were coupled to optical fibers. An intermediate frequency (IF) bandwidth of about 3 GHz was found in agreement with measurements at 300 GHz, and a noise figure of about 25 dB was obtained that was only 10 dB above the quantum limit.
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Notes Approved no
Call Number (up) Serial 906
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Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E.
Title Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies Type Journal Article
Year 1998 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 73 Issue 19 Pages 2814-2816
Keywords NbN HEB mixers, noise temperature, local oscillator power
Abstract In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW.
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Notes Approved no
Call Number (up) Serial 911
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Author Ferrari, S.; Kahl, O.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P.
Title Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires Type Journal Article
Year 2015 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 106 Issue 15 Pages 151101 (1 to 5)
Keywords SSPD, SNSPD
Abstract We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents.

W. H. P. Pernice acknowledges support by the DFG Grant Nos. PE 1832/1-1 and PE 1832/1-2 and the Helmholtz society through Grant No. HIRG-0005. The Ph.D. education of O. Kahl is embedded in the Karlsruhe School of Optics and Photonics (KSOP). G. N. Goltsman acknowledges support by Russian Federation President Grant HШ-1918.2014.2 and Ministry of Education and Science of the Russian Federation Contract No.: RFMEFI58614X0007. A. Korneev acknowledges support by Statement Task No. 3.1846.2014/k. V. Kovalyuk acknowledges support by Statement Task No. 2327. We also acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) and the State of Baden-Württemberg through the DFG-Center for Functional Nanostructures (CFN) within subproject A6.4. We thank S. Kühn and S. Diewald for the help with device fabrication as well as B. Voronov and A. Shishkin for help with NbN thin film deposition and A. Semenov for helpful discussion about the detection mechanism of nanowire SSPD's.

The authors declare no competing financial interests.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number (up) Serial 1211
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Author Kovalyuk, V.; Hartmann, W.; Kahl, O.; Kaurova, N.; Korneev, A.; Goltsman, G.; Pernice, W. H. P.
Title Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits Type Journal Article
Year 2013 Publication Opt. Express Abbreviated Journal Opt. Express
Volume 21 Issue 19 Pages 22683-22692
Keywords SSPD, SNSPD, NbN nanoeires, Si3N4 waveguides
Abstract We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1094-4087 ISBN Medium
Area Expedition Conference
Notes PMID:24104155 Approved no
Call Number (up) Serial 1213
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Author Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Kovalyuk, V. V.; Gorshkov, K. N.; Kazakov, A. Y.; Ivanov, S. Y.; Egorov, A. Y.; Sakseev, D. A.; Konnikov, S. G.
Title Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices Type Journal Article
Year 2011 Publication Tech. Phys. Abbreviated Journal Tech. Phys.
Volume 56 Issue 6 Pages 826-830
Keywords GaAs/AlGaAs superlattices
Abstract The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1063-7842 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number (up) Serial 1214
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Author Schuck, C.; Pernice, W. H. P.; Minaeva, O.; Li, Mo; Gol'tsman, G.; Sergienko, A. V.; Tang, H. X.
Title Matrix of integrated superconducting single-photon detectors with high timing resolution Type Journal Article
Year 2013 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 23 Issue 3 Pages 2201007-2201007
Keywords NbN SSPD, SNSPD, array, matrix
Abstract We demonstrate a large grid of individually addressable superconducting single photon detectors on a single chip. Each detector element is fully integrated into an independent waveguide circuit with custom functionality at telecom wavelengths. High device density is achieved by fabricating the nanowire detectors in traveling wave geometry directly on top of silicon-on-insulator waveguides. Our superconducting single photon detector matrix includes detector designs optimized for high detection efficiency, low dark count rate, and high timing accuracy. As an example, we exploit the high timing resolution of a particularly short nanowire design to resolve individual photon round-trips in a cavity ring-down measurement of a silicon ring resonator.
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Corporate Author Thesis
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number (up) Serial 1373
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Author Trifonov, A.; Tong, C.-Y. E.; Blundell, R.; Ryabchun, S.; Gol'tsman, G.
Title Probing the stability of HEB mixers with microwave injection Type Journal Article
Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 25 Issue 3 Pages 2300404 (1 to 4)
Keywords NbN HEB mixer, stability, Allan-variance
Abstract Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number (up) Serial 1355
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Author Lobanov, Y.; Shcherbatenko, M.; Finkel, M.; Maslennikov, S.; Semenov, A.; Voronov, B. M.; Rodin, A. V.; Klapwijk, T. M.; Gol'tsman, G. N.
Title NbN hot-electron-bolometer mixer for operation in the near-IR frequency range Type Journal Article
Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 25 Issue 3 Pages 2300704 (1 to 4)
Keywords HEB mixer, IR, optical antenna
Abstract Traditionally, hot-electron-bolometer (HEB) mixers are employed for THz and “super-THz” heterodyne detection. To explore the near-IR spectral range, we propose a fiber-coupled NbN film based HEB mixer. To enhance the incident-light absorption, a quasi-antenna consisting of a set of parallel stripes of gold is used. To study the antenna effect on the mixer performance, we have experimentally studied a set of devices with different size of the Au stripe and spacing between the neighboring stripes. With use of the well-known isotherm technique we have estimated the absorption efficiency of the mixer, and the maximum efficiency has been observed for devices with the smallest pitch of the alternating NbN and NbN-Au stripes. Also, a proper alignment of the incident Eâƒ<2014>-field with respect to the stripes allows us to improve the coupling further. Studying IV-characteristics of the mixer under differently-aligned Eâƒ<2014>-field of the incident radiation, we have noticed a difference in their shape. This observation suggests that a difference exists in the way the two waves with orthogonal polarizations parallel and perpendicular Eâƒ<2014>-field to the stripes heat the electrons in the HEB mixer. The latter results in a variation in the electron temperature distribution over the HEB device irradiated by the two waves.
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Notes Approved no
Call Number (up) Serial 952
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Author Seliverstov, S.; Maslennikov, S.; Ryabchun, S.; Finkel, M.; Klapwijk, T. M.; Kaurova, N.; Vachtomin, Yu.; Smirnov, K.; Voronov, B.; Goltsman, G.
Title Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer Type Journal Article
Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 25 Issue 3 Pages 2300304
Keywords HEB detector responsivity, HEB model, numerical calculations, numerical model
Abstract We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Notes Approved no
Call Number (up) Serial 953
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Author Gershenzon, E. M.; Gol’tsman, G. N.; Gousev, Y. P.; Elant’ev, A. I.; Semenov, A. D.
Title Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films Type Journal Article
Year 1991 Publication IEEE Trans. Magn. Abbreviated Journal IEEE Trans. Magn.
Volume 27 Issue 2 Pages 1317-1320
Keywords YBCO, HTS, Nb HEB mixers
Abstract A theory of an electron-heating mixer which makes it possible to calculate all the characteristics of the device is developed. It is shown that positive conversion gain is possible for such a mixer in the millimeter to near-infrared wavelength range. The dynamic range and the optimum heterodyne power can be selected from a very wide interval by varying the mixing element volume. Measurements made for Nb within the frequency range of 120-750 GHz confirm the theory. The conversion loss obtained at T=1.6 K and normalized to the element reaches 0.3 dB in the intermediate frequency band of 40 MHz; the possible noise temperature is 50 K. The estimation of noise temperature and output band for YBaCuO at T=77 yields 200 K and more than 10 GHz, respectively.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1941-0069 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number (up) Serial 1681
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Author Gol’tsman, G.; Okunev, O.; Chulkova, G.; Lipatov, A.; Dzardanov, A.; Smirnov, K.; Semenov, A.; Voronov, B.; Williams, C.; Sobolewski, R.
Title Fabrication and properties of an ultrafast NbN hot-electron single-photon detector Type Journal Article
Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 11 Issue 1 Pages 574-577
Keywords NbN SSPD, SNSPD
Abstract A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number (up) Serial 1547
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Author Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G.
Title Local resistivity and the current-voltage characteristics of hot electron bolometer mixers Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 15 Issue 2 Pages 495-498
Keywords HEB mixer distributed model, HEB distributed model, distributed HEB model
Abstract Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling.
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Corporate Author Thesis
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number (up) Serial 980
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Author Гольцман, Г. Н.; Птицина, Н. Г.; Ригер, Е. Р.
Title Оже-рекомбинация свободных носителей на мелких донорах в германии Type Journal Article
Year 1984 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников
Volume 18 Issue 9 Pages 1684-1686
Keywords Ge, free carrier recombination
Abstract
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Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number (up) Serial 1710
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of electron and hole binding into excitons in germanium Type Journal Article
Year 1983 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 57 Issue 2 Pages 369-376
Keywords Ge, electron and hole binding
Abstract The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference
Notes Approved no
Call Number (up) Serial 1711
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Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semyonov, A. D.; Sergeev, A. V.
Title Heating of electrons in superconductor in the resistive state due to electromagnetic radiation Type Journal Article
Year 1984 Publication Solid State Communications Abbreviated Journal Solid State Communications
Volume 50 Issue 3 Pages 207-212
Keywords Nb HEB
Abstract The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields.
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Corporate Author Thesis
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0038-1098 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number (up) Serial 1709
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