| Records |
| Author |
Wild, W.; Kardashev, N. S.; Likhachev, S. F.; Babakin, N. G.; Arkhipov, V. Y.; Vinogradov, I. S.; Andreyanov, V. V.; Fedorchuk, S. D.; Myshonkova, N. V.; Alexsandrov, Y. A.; Novokov, I. D.; Goltsman, G. N.; Cherepaschuk, A. M.; Shustov, B. M.; Vystavkin, A. N.; Koshelets, V. P.; Vdovin, V.F.; de Graauw, T.; Helmich, F.; vd Tak, F.; Shipman, R.; Baryshev, A.; Gao, J. R.; Khosropanah, P.; Roelfsema, P.; Barthel, P.; Spaans, M.; Mendez, M.; Klapwijk, T.; Israel, F.; Hogerheijde, M.; vd Werf, P.; Cernicharo, J.; Martin-Pintado, J.; Planesas, P.; Gallego, J. D.; Beaudin, G.; Krieg, J. M.; Gerin, M.; Pagani, L.; Saraceno, P.; Di Giorgio, A. M.; Cerulli, R.; Orfei, R.; Spinoglio, L.; Piazzo, L.; Liseau, R.; Belitsky, V.; Cherednichenko, S.; Poglitsch, A.; Raab, W.; Guesten, R.; Klein, B.; Stutzki, J.; Honingh, N.; Benz, A.; Murphy, A.; Trappe, N.; Räisänen, A. |
| Title |
Millimetron—a large Russian-European submillimeter space observatory |
Type |
Journal Article |
| Year |
2009 |
Publication |
Exp. Astron. |
Abbreviated Journal |
Exp. Astron. |
| Volume |
23 |
Issue |
1 |
Pages |
221-244 |
Keywords  |
Millimetron space observatory, VLBI, very long baseline interferometry |
| Abstract |
Millimetron is a Russian-led 12 m diameter submillimeter and far-infrared space observatory which is included in the Space Plan of the Russian Federation for launch around 2017. With its large collecting area and state-of-the-art receivers, it will enable unique science and allow at least one order of magnitude improvement with respect to the Herschel Space Observatory. Millimetron will be operated in two basic observing modes: as a single-dish observatory, and as an element of a ground-space very long baseline interferometry (VLBI) system. As single-dish, angular resolutions on the order of 3 to 12 arc sec will be achieved and spectral resolutions of up to a million employing heterodyne techniques. As VLBI antenna, the chosen elliptical orbit will provide extremely large VLBI baselines (beyond 300,000 km) resulting in micro-arc second angular resolution. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0922-6435 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1402 |
| Permanent link to this record |
| |
|
| |
| Author |
Korneeva, Y.; Florya, I.; Vdovichev, S.; Moshkova, M.; Simonov, N.; Kaurova, N.; Korneev, A.; Goltsman, G. |
| Title |
Comparison of hot spot formation in nbn and mon thin superconducting films after photon absorption |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
27 |
Issue |
4 |
Pages |
1-4 |
| Keywords |
MoNx SSPD |
| Abstract |
In superconducting single-photon detectors (SSPD), the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here, we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoN ∞ detectors, we study the dependence of detection efficiency on bias current, photon energy, and strip width, and compare it with NbN SSPD. We observe nonlinear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current, which we attribute to longer electron-phonon interaction time. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1051-8223 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1325 |
| Permanent link to this record |
| |
|
| |
| Author |
Korneeva, Y. P.; Manova, N. N.; Florya, I. N.; Mikhailov, M. Y.; Dobrovolskiy, O. V.; Korneev, A. A.; Vodolazov, D. Y. |
| Title |
Different single-photon response of wide and narrow superconducting MoxSi1−x strips |
Type |
Journal Article |
| Year |
2020 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
| Volume |
13 |
Issue |
2 |
Pages |
024011 (1 to 7) |
| Keywords |
MoSi SSPD, SNSPD |
| Abstract |
The photon count rate (PCR) of superconducting single-photon detectors made of MoxSi1−x films shaped as a 2-μm-wide strip and a 115-nm-wide meander strip line is studied experimentally as a function of the dc biasing current at different values of the perpendicular magnetic field. For the wide strip, a crossover current Icross is observed, below which the PCR increases with an increasing magnetic field and above which it decreases. This behavior contrasts with the narrow MoxSi1−x meander, for which no crossover current is observed, thus suggesting different photon-detection mechanisms in the wide and narrow strips. Namely, we argue that in the wide strip the absorbed photon destroys superconductivity locally via the vortex-antivortex mechanism for the emergence of resistance, while in the narrow meander superconductivity is destroyed across the whole strip line, forming a hot belt. Accordingly, the different photon-detection mechanisms associated with vortices and the hot belt determine the qualitative difference in the dependence of the PCR on the magnetic field. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
2331-7019 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1790 |
| Permanent link to this record |
| |
|
| |
| Author |
Zhang, X.; Lita, A. E.; Smirnov, K.; Liu, H. L.; Zhu, D.; Verma, V. B.; Nam, S. W.; Schilling, A. |
| Title |
Strong suppression of the resistivity near the superconducting transition in narrow microbridges in external magnetic fields |
Type |
Journal Article |
| Year |
2020 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
101 |
Issue |
6 |
Pages |
060508 (1 to 6) |
| Keywords |
MoSi, WSi films |
| Abstract |
We have investigated a series of superconducting bridges based on homogeneous amorphous WSi and MoSi films, with bridge widths w ranging from 2 to 1000μm and film thicknesses d∼4−6 and 100 nm. Upon decreasing the bridge widths below the respective Pearl lengths, we observe in all cases distinct changes in the characteristics of the resistive transitions to superconductivity. For each of the films, the resistivity curves R(B,T) separate at a well-defined and field-dependent temperature T∗(B) with decreasing the temperature, resulting in a dramatic suppression of the resistivity and a sharpening of the transitions with decreasing bridge width w. The associated excess conductivity in all the bridges scales as 1/w, which may suggest either the presence of a highly conducting region that is dominating the electric transport, or a change in the vortex dynamics in narrow enough bridges. We argue that this effect can only be observed in materials with sufficiently weak vortex pinning. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
2469-9950 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1800 |
| Permanent link to this record |
| |
|
| |
| Author |
Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
| Title |
Development of a silicon membrane-based multipixel hot electron bolometer receiver |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
27 |
Issue |
4 |
Pages |
1-5 |
| Keywords |
Multi-pixel, NbN HEB, silicon-on-insulator, horn array |
| Abstract |
We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1051-8223 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1324 |
| Permanent link to this record |
| |
|
| |
| Author |
Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
| Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
Type |
Journal Article |
| Year |
1976 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
24 |
Issue |
3 |
Pages |
125-128 |
| Keywords |
n-Ge, cyclotron-impurity resonance |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1730 |
| Permanent link to this record |
| |
|
| |
| Author |
Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. |
| Title |
Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ |
Type |
Journal Article |
| Year |
1986 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
| Volume |
20 |
Issue |
1 |
Pages |
99-103 |
| Keywords |
n-Ge, Hubbard upper zone conductivity, negative magnetoresistance |
| Abstract |
В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1759 |
| Permanent link to this record |
| |
|
| |
| Author |
Гершензон, Е. М.; Грачев, С. А.; Литвак-Горская, Л. Б. |
| Title |
Механизм преобразования частоты в n-InSb-смесителе |
Type |
Journal Article |
| Year |
1991 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
| Volume |
25 |
Issue |
11 |
Pages |
1986-1998 |
| Keywords |
n-InSb mixer |
| Abstract |
Проведено комплексное исследование n-InSb смесителя на λ=2.6 мм, включающее в себя исследование вольт-амперных характеристик при E=0−2 В/см, температурной зависимости проводимости в диапазоне T=1.6−20 K, высокочастотной проводимости при f=0.5−10 МГц и магнитосопротивления при H=0−5 кЭ. Показано, что в оптимальном режиме механизм преобразования частоты связан с фотоионизационными процессами при прыжковой фотопроводимости (ПФП). На основе модели ПФП рассчитан коэффициент преобразования смесителя и произведено сопоставление его с экспериментом. Показана несостоятельность модели преобразования частоты в компенсированном n-InSb (K≥0.8), основанной на разогреве электронов. Обсуждены требования к параметрам материала и режимам n-InSb смесителя миллиметрового диапазона волн. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
Russian |
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1753 |
| Permanent link to this record |
| |
|
| |
| Author |
Bespalov, A.V.; Gol'tsman, G.N.; Semenov, A.D.; Renk, K.F. |
| Title |
Determination of the far-infrared emission characteristic of a cyclotron p-germanium laser by use of a superconducting Nb detector |
Type |
Journal Article |
| Year |
1991 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
| Volume |
80 |
Issue |
7 |
Pages |
503-506 |
| Keywords |
Nb detector, applications |
| Abstract |
We studied the far-infrared emission characteristics of a cyclotron p-germanium laser using a broad-band superconducting Nb film detector. For magnetic fields between ∼25 kOe and ∼50 kOe, emission in a frequency range from ∼50 cm-1 to ∼100 cm-1 with maximum intensity around 90 cm-1 was obtained. We determined, for fixed magnetic fields, electric field dependences of the emission intensity taking into account that the total electric field is a sum of the applied and the Hall electric field. An analysis of the emission intensity characteristic gives evidence that transitions between the two lowest Landau levels of light holes are responsible for the laser action. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0038-1098 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1677 |
| Permanent link to this record |
| |
|
| |
| Author |
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Electron-phonon interaction in ultrathin Nb films |
Type |
Journal Article |
| Year |
1990 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
70 |
Issue |
3 |
Pages |
505-511 |
| Keywords |
Nb films |
| Abstract |
A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.
1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
241 |
| Permanent link to this record |
| |
|
| |
| Author |
Samsonova, A. S.; Zolotov, P. I.; Baeva, E. M.; Lomakin, A. I.; Titova, N. A.; Kardakova, A. I.; Goltsman, G. N. |
| Title |
Signatures of surface magnetic disorder in niobium films |
Type |
Journal Article |
| Year |
2021 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
31 |
Issue |
5 |
Pages |
1-5 |
| Keywords |
Nb films |
| Abstract |
We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder ( kFl≈150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm −2 , which is in agreement with the previously reported data for Nb films. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1051-8223 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1792 |
| Permanent link to this record |
| |
|
| |
| Author |
Elant'ev, A. I.; Karasik, B. S. |
| Title |
Effect of high-frequency current on Nb superconductive film in resistive state |
Type |
Journal Article |
| Year |
1989 |
Publication |
Sov. J. Low Temp. Phys. |
Abbreviated Journal |
Sov. J. Low Temp. Phys. |
| Volume |
15 |
Issue |
7 |
Pages |
379-383 |
| Keywords |
Nb HEB |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
882 |
| Permanent link to this record |
| |
|
| |
| Author |
Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Heating of electrons in a superconductor in the resistive state by electromagnetic radiation |
Type |
Journal Article |
| Year |
1984 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
59 |
Issue |
2 |
Pages |
442-450 |
| Keywords |
Nb HEB |
| Abstract |
The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
RPLAB @ phisix @ |
Serial |
983 |
| Permanent link to this record |
| |
|
| |
| Author |
Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semyonov, A. D.; Sergeev, A. V. |
| Title |
Heating of electrons in superconductor in the resistive state due to electromagnetic radiation |
Type |
Journal Article |
| Year |
1984 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
| Volume |
50 |
Issue |
3 |
Pages |
207-212 |
| Keywords |
Nb HEB |
| Abstract |
The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0038-1098 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1709 |
| Permanent link to this record |
| |
|
| |
| Author |
Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D. |
| Title |
Fast-response superconducting electron bolometer |
Type |
Journal Article |
| Year |
1989 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
| Volume |
15 |
Issue |
3 |
Pages |
88-92 |
| Keywords |
Nb HEB |
| Abstract |
The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
Russian |
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1694 |
| Permanent link to this record |
