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Author Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G.
Title Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors Type Journal Article
Year 2018 Publication Phys. Status Solidi B Abbreviated Journal Phys. Status Solidi B
Volume 255 Issue 1 Pages 1700227 (1 to 6)
Keywords (up) carbon nanotube schottky diodes, CNT
Abstract Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0370-1972 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1321
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Author Khasminskaya, S.; Pyatkov, F.; Słowik, K.; Ferrari, S.; Kahl, O.; Kovalyuk, V.; Rath, P.; Vetter, A.; Hennrich, F.; Kappes, M. M.; Gol'tsman, G.; Korneev, A.; Rockstuhl, C.; Krupke, R.; Pernice, W. H. P.
Title Fully integrated quantum photonic circuit with an electrically driven light source Type Journal Article
Year 2016 Publication Nat. Photon. Abbreviated Journal Nat. Photon.
Volume 10 Issue 11 Pages 727-732
Keywords (up) Carbon nanotubes and fullerenes, Integrated optics, Single photons and quantum effects, Waveguide integrated single-photon detector
Abstract Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices.
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Notes Approved no
Call Number RPLAB @ kovalyuk @ Serial 1105
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Author Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N.
Title Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection Type Journal Article
Year 2016 Publication Semicond. Abbreviated Journal Semicond.
Volume 50 Issue 12 Pages 1600-1603
Keywords (up) carbon nanotubes, CNT detectors
Abstract Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1063-7826 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1776
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Author Akhmadishina, K. F.; Bobrinetskiy, I. I.; Komarov, I. A.; Malovichko, A. M.; Nevolin, V. K.; Fedorov, G. E.; Golovin, A. V.; Zalevskiy, A. O.; Aidarkhanov, R. D.
Title Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers Type Journal Article
Year 2015 Publication Semicond. Abbreviated Journal Semicond.
Volume 49 Issue 13 Pages 1749-1753
Keywords (up) carbon nanotubes, CNT detectors
Abstract The possibility of the fabrication of a fast-response biological sensor based on a composite of single-layer carbon nanotubes and aptamers for the specific detection of proteins is shown. The effect of modification of the surface of the carbon nanotubes on the selectivity and sensitivity of the sensors is investigated. It is shown that carboxylated nanotubes have a better selectivity for detecting thrombin.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1063-7826 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1783
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Author Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P.
Title Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors Type Journal Article
Year 2015 Publication Carbon Abbreviated Journal Carbon
Volume 87 Issue Pages 330-337
Keywords (up) carbon nanotubes, CNT detectors, field effect transistors, FET
Abstract Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0008-6223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1778
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Author Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Leiman, V. G.; Fedorov, G.; Goltzman, G. N.; Gayduchenko, I. A.; Titova, N.; Coquillat, D.; But, D.; Knap, W.; Mitin, V.; Shur, M. S.
Title Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection Type Journal Article
Year 2016 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.
Volume 120 Issue 4 Pages 044501 (1 to 13)
Keywords (up) carbon nanotubes, CNT detectors, plasmons
Abstract We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1777
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Author Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E.
Title Amplification of a Raman scattering signal by carbon nanotubes Type Journal Article
Year 2018 Publication Dokl. Phys. Abbreviated Journal Dokl. Phys.
Volume 63 Issue 12 Pages 496-498
Keywords (up) carbon nanotubes, CNT, Raman scattering, RLS
Abstract The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1028-3358 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1775
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Author Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G.
Title On chip carbon nanotube tunneling spectroscopy Type Journal Article
Year 2020 Publication Fullerenes, Nanotubes and Carbon Nanostructures Abbreviated Journal
Volume 28 Issue 1 Pages 50-53
Keywords (up) carbon nanotubes, CNT, scanning tunneling microscope, STM
Abstract We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes.
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Publisher Taylor & Francis Place of Publication Editor
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Notes Approved no
Call Number doi:10.1080/1536383X.2019.1671365 Serial 1269
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Author Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G.
Title Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation Type Journal Article
Year 2013 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 103 Issue 18 Pages 181121 (1 to 5)
Keywords (up) carbon nanotubes, CNT, THz radiation, SiO2 substrate
Abstract We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.
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Publisher Place of Publication Editor
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1171
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Author Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P.
Title Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes Type Journal Article
Year 2015 Publication Nano Lett. Abbreviated Journal Nano Lett.
Volume 15 Issue 12 Pages 7859-7866
Keywords (up) carbon nanotubes, CNT, tunable superconductivity, van Hove singularities
Abstract Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube.
Address Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States
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Series Volume Series Issue Edition
ISSN 1530-6984 ISBN Medium
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Notes PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 Approved no
Call Number Serial 1782
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Author Pyatkov, F.; Khasminskaya, S.; Kovalyuk, V.; Hennrich, F.; Kappes, M. M.; Goltsman, G. N.; Pernice, W. H. P.; Krupke, R.
Title Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers Type Journal Article
Year 2017 Publication Beilstein J. Nanotechnol. Abbreviated Journal Beilstein J. Nanotechnol.
Volume 8 Issue Pages 38-44
Keywords (up) carbon nanotubes; CNT; infrared; integrated optics devices; nanomaterials
Abstract Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources.
Address Department of Materials and Earth Sciences, Technische Universitat Darmstadt, Darmstadt 64287, Germany
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2190-4286 ISBN Medium
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Notes PMID:28144563; PMCID:PMC5238692 Approved no
Call Number RPLAB @ kovalyuk @ Serial 1109
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Author Lang, P. T.; Leipold, I.; Knott, W. J.; Semenov, A. D.; Gol'tsman, G. N.; Renk, K. F.
Title New far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser Type Journal Article
Year 1991 Publication Appl. Phys. B Abbreviated Journal Appl. Phys. B
Volume 53 Issue 4 Pages 207-212
Keywords (up) CO2 IR lasers, applications, CH3Cl, CH3Br
Abstract In this paper we report on the detection of new far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser. We found 80 new lines for CH3Cl and 9 new lines for CH3Br in the frequency region between 16 cm−1 and 41 cm−1, all due to stimulated Raman scattering. For the Raman gain regions bandwidths up to about 700 MHz were found. We also observed high intensity short far-infrared laser pulses of durations in the nanosecond regime.
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Series Volume Series Issue Edition
ISSN 0721-7269 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1678
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Author Lang, P. T.; Knott, W. J.; Leipold, I.; Renk, K. F.; Semenov, A. D.; Gol'tsman, G. N.
Title Generation and detection of tunable ultrashort infrared and far-infrared radiation pulses of high intensity Type Journal Article
Year 1992 Publication Int. J. of Infrared and Millimeter Waves Abbreviated Journal Int. J. of Infrared and Millimeter Waves
Volume 13 Issue 3 Pages 373-380
Keywords (up) CO2 IR lasers, FIR
Abstract We report on generation and detection of intense pulsed radiation with frequency tunability in the infrared and far-infrared spectral regions. Infrared radiation is generated with a transversally electrically excited high pressure CO2 laser. A laser pulse of a total duration of about 300 ns consisted, due to self mode locking, of a series of single pulses, some with pulse durations of less than 450 ps and peak powers larger than 20 MW. Using these pulses for optical with durations less than 400 ps were obtained. For detection a new ultrafast superconducting detector was used.
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Series Volume Series Issue Edition
ISSN 0195-9271 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1671
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Author Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И.
Title Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда Type Journal Article
Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников
Volume 17 Issue 10 Pages 1873-1876
Keywords (up) compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance
Abstract
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Call Number Serial 1763
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Author Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б.
Title Кинетические явления в компенсированном n-InSb при низких температурах Type Journal Article
Year 1990 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников
Volume 24 Issue 1 Pages 3-24
Keywords (up) compensated n-InSb, impurities
Abstract Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb.
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Publisher Place of Publication Editor
Language Russian Summary Language Original Title
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Notes Approved no
Call Number Serial 1756
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