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| Author | Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. | ||||
| Title | On chip carbon nanotube tunneling spectroscopy | Type | Journal Article | ||
| Year | 2020 | Publication | Fullerenes, Nanotubes and Carbon Nanostructures | Abbreviated Journal | |
| Volume | 28 | Issue | 1 | Pages | 50-53 |
| Keywords | carbon nanotubes, CNT, scanning tunneling microscope, STM | ||||
| Abstract | We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes. | ||||
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| Publisher | Taylor & Francis | Place of Publication  |
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| Notes | Approved | no | |||
| Call Number | doi:10.1080/1536383X.2019.1671365 | Serial | 1269 | ||
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| Author | Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. | ||||
| Title | Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations | Type | Journal Article | ||
| Year | 2019 | Publication | AIP Advances | Abbreviated Journal | AIP Advances |
| Volume | 9 | Issue | 10 | Pages | 105220 |
| Keywords | GaAs/AlGaAs superlattice, SL, NbN HEB | ||||
| Abstract | Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2158-3226 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1274 | |||
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| Author | Elezov, M.; Ozhegov, R.; Goltsman, G.; Makarov, V. | ||||
| Title | Countermeasure against bright-light attack on superconducting nanowire single-photon detector in quantum key distribution | Type | Journal Article | ||
| Year | 2019 | Publication | Opt. Express | Abbreviated Journal | Opt. Express |
| Volume | 27 | Issue | 21 | Pages | 30979-30988 |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We present an active anti-latching system for superconducting nanowire single-photon detectors. We experimentally test it against a bright-light attack, previously used to compromise security of quantum key distribution. Although our system detects continuous blinding, the detector is shown to be partially blindable and controllable by specially tailored sequences of bright pulses. Improvements to the countermeasure are suggested. | ||||
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| Language | English | Summary Language | Original Title | ||
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| ISSN | 1094-4087 | ISBN | Medium | ||
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| Notes | PMID:31684339 | Approved | no | ||
| Call Number | Serial | 1275 | |||
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| Author | Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. | ||||
| Title | Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer | Type | Journal Article | ||
| Year | 2019 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 32 | Issue | 7 | Pages | 075003 |
| Keywords | NbN HEB mixer, GaN buffer layer, sapphire substrate | ||||
| Abstract | We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. | ||||
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| Publisher | IOP Publishing | Place of Publication |
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| Notes | Approved | no | |||
| Call Number | Antipov_2019 | Serial | 1277 | ||
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| Author | Nikogosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V. | ||||
| Title | Effect of absorption on the efficiency of terahertz radiation generation in the metal waveguide partially filled with nonlinear crystal LiNbO3, DAST or ZnTe | Type | Journal Article | ||
| Year | 2019 | Publication | J. Contemp. Phys. | Abbreviated Journal | J. Contemp. Phys. |
| Volume | 54 | Issue | 1 | Pages | 97-104 |
| Keywords | nonlinear crystal, THz, waveguide | ||||
| Abstract | The influence of terahertz (THz) radiation absorption on the efficiency of generation of coherent THz radiation in the system ‘nonlinear-optical crystal partially filling the cross section of a rectangular metal waveguide’ has been investigated. The efficiency of the nonlinear frequency conversion of optical laser radiation to the THz range depends on the loss in the system and the fulfillment of the phase-matching (FM) condition in a nonlinear crystal. The method of partially filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. The phase matching is achieved by numerical determination of the thickness of the nonlinear crystal, that is the degree of partial filling of the waveguide. The attenuation of THz radiation caused by losses both in the metal walls of the waveguide and in the crystal was studied, taking into account the dimension of the cross section of the waveguide, the degree of partial filling, and the dielectric constant of the crystal. It is shown that the partial filling of the waveguide with a nonlinear crystal results in an increase in the efficiency of generation of THz radiation by an order of magnitude, owing to the decrease in absorption. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1068-3372 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1289 | |||
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| Author | Nikoghosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V. | ||||
| Title | Effect of absorption on the efficiency of THz radiation generation in a nonlinear crystal placed into a waveguide | Type | Journal Article | ||
| Year | 2018 | Publication | Armenian J. Phys. | Abbreviated Journal | Armenian J. Phys. |
| Volume | 11 | Issue | 4 | Pages | 257-262 |
| Keywords | THz, waveguide, nonlinear crystal | ||||
| Abstract | The effect of THz radiation absorption on the efficiency of generation of coherent THz radiation in a nonlinear optical crystal placed into a metal rectangular waveguide is studied. The efficiency of the nonlinear conversion of optical laser radiation to the THz band is also a function of the phase-matching (PM) condition inside the nonlinear crystal. The method of partial filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. Phase matching was obtained by the proper choice of the thickness of the nonlinear crystal, namely the degree of partial filling of the waveguide. We have studied the THz radiation attenuation caused by the losses in both the metal walls of the waveguide and in the crystal, taking into account the dimension of the cross section of the waveguide, the degree of partial filling and its dielectric constant. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1829-1171 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1291 | |||
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| Author | Ren, Y.; Zhang, D. X.; Zhou, K. M.; Miao, W.; Zhang, W.; Shi, S. C.; Seleznev, V.; Pentin, I.; Vakhtomin, Y.; Smirnov, K. | ||||
| Title | 10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser | Type | Journal Article | ||
| Year | 2019 | Publication | AIP Advances | Abbreviated Journal | AIP Advances |
| Volume | 9 | Issue | 7 | Pages | 075307 |
| Keywords | NbN HEB mixers, QCL, IR | ||||
| Abstract | We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated. The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy. |
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| ISSN | 2158-3226 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1293 | |||
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| Author | Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. | ||||
| Title | Performance of THz components based on microstrip PECVD SiNx technology | Type | Journal Article | ||
| Year | 2017 | Publication | IEEE Trans. THz Sci. Technol. | Abbreviated Journal | IEEE Trans. THz Sci. Technol. |
| Volume | 7 | Issue | 6 | Pages | 765-771 |
| Keywords | transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices | ||||
| Abstract | We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope. | ||||
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| ISSN | 2156-342X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1294 | |||
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| Author | Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. | ||||
| Title | Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films | Type | Journal Article | ||
| Year | 2015 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 25 | Issue | 3 | Pages | 1-4 |
| Keywords | TiN MKID | ||||
| Abstract | We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1296 | |||
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| Author | Korneeva, Y. P.; Vodolazov, D. Y.; Semenov, A. V.; Florya, I. N.; Simonov, N.; Baeva, E.; Korneev, A. A.; Goltsman, G. N.; Klapwijk, T. M. | ||||
| Title | Optical single-photon detection in micrometer-scale NbN bridges | Type | Journal Article | ||
| Year | 2018 | Publication | Phys. Rev. Applied | Abbreviated Journal | Phys. Rev. Applied |
| Volume | 9 | Issue | 6 | Pages | 064037 (1 to 13) |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We demonstrate experimentally that single-photon detection can be achieved in micrometer-wide NbN bridges, with widths ranging from 0.53 to 5.15 μm and for photon wavelengths of 408 to 1550 nm. The microbridges are biased with a dc current close to the experimental critical current, which is estimated to be about 50% of the theoretically expected depairing current. These results offer an alternative to the standard superconducting single-photon detectors, based on nanometer-scale nanowires implemented in a long meandering structure. The results are consistent with improved theoretical modeling based on the theory of nonequilibrium superconductivity, including the vortex-assisted mechanism of initial dissipation. | ||||
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| ISSN | 2331-7019 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1303 | |||
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| Author | Korneev, A.; Korneeva, Y.; Florya, I.; Semenov, A.; Goltsman, G. | ||||
| Title | Photon switching statistics in multistrip superconducting single-photon detectors | Type | Journal Article | ||
| Year | 2018 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 28 | Issue | 7 | Pages | 1-4 |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We study photon count statistics in superconducting single-photon detectors consisting of up to 70 narrow superconducting strips connected in parallel. Using interarrival time analysis, we demonstrate that our samples are operated in the “arm-trigger” regime and require up to seven subsequently absorbed photons to form a resistive state in the whole sample. We also performed numerical simulation of the light and dark count rates versus detector bias current, which are in good agreement with the experimental results. | ||||
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| ISSN | 1051-8223 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1304 | |||
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| Author | Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Korneev, A. A.; Chulkova, G. M.; Goltsman, G. N. | ||||
| Title | Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films | Type | Journal Article | ||
| Year | 2018 | Publication | Phys. Rev. B | Abbreviated Journal | Phys. Rev. B |
| Volume | 97 | Issue | 18 | Pages | 184512 (1 to 13) |
| Keywords | WSi films, diffusion constant, SSPD, SNSPD | ||||
| Abstract | We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe−ph∼140–190 ps at TC=3.4K, supporting the results of earlier measurements by independent techniques. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2469-9950 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1305 | |||
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| Author | Tretyakov, I. V.; Anfertyev, V. A.; Revin, L. S.; Kaurova, N. S.; Voronov, B. M.; Vaks, V. L.; Goltsman, G. N. | ||||
| Title | Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator | Type | Journal Article | ||
| Year | 2018 | Publication | Radiophys. Quant. Electron. | Abbreviated Journal | Radiophys. Quant. Electron. |
| Volume | 60 | Issue | 12 | Pages | 988-992 |
| Keywords | NbN HEB mixer | ||||
| Abstract | We present the results of experimental studies of the basic characteristics and operation features of a terahertz heterodyne detector based on the superconducting NbN HEB mixer and a quantum cascade laser as a local oscillator operating at a frequency of 2.02 THz. The measured noise temperature of such a mixer amounted to 1500 K. The spectral resolution of the detector is determined by the width of the local-oscillator spectral line whose measured value does not exceed 1 MHz. The quantum-cascade laser could be linearly tuned with respect to frequency with the coefficient 7.2 MHz/mA within the limits of the current oscillation bandwidth. | ||||
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| ISSN | 0033-8443 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1307 | |||
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| Author | Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. | ||||
| Title | Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices | Type | Journal Article | ||
| Year | 2018 | Publication | Nanotechnol. | Abbreviated Journal | Nanotechnol. |
| Volume | 29 | Issue | 24 | Pages | 245204 (1 to 8) |
| Keywords | single layer graphene, graphene nanoribbons | ||||
| Abstract | We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity. | ||||
| Address | Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia | ||||
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| ISSN | 0957-4484 | ISBN | Medium | ||
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| Notes | PMID:29553479 | Approved | no | ||
| Call Number | Serial | 1308 | |||
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| Author | Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. | ||||
| Title | Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors | Type | Journal Article | ||
| Year | 2018 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 112 | Issue | 14 | Pages | 141101 (1 to 5) |
| Keywords | graphene field effect transistors, FET | ||||
| Abstract | Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs. D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1309 | |||
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