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| Author | Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. | ||||
| Title | Ultimate quantum efficiency of a superconducting hot-electron photodetector | Type | Journal Article | ||
| Year | 1998 | Publication  |
Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 73 | Issue | 26 | Pages | 3938-3940 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W, respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1579 | |||
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| Author | Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. | ||||
| Title | Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures | Type | Journal Article | ||
| Year | 2001 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | 79 | Issue | Pages | 2049-2051 | |
| Keywords | HEB detector, FIR, far infrared | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ s @ heb_eph_interaction_Gershenzon | Serial | 315 | ||
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| Author | Verevkin, A.; Zhang, J.; Sobolewski, Roman; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Gol'tsman, G. N.; Semenov, A. | ||||
| Title | Detection efficiency of large-active-area NbN single-photon superconducting detectors in the ultraviolet to near-infrared range | Type | Journal Article | ||
| Year | 2002 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | 80 | Issue | 25 | Pages | 4687-4689 |
| Keywords | NbN SSPD, SNSPD, QE | ||||
| Abstract | We report our studies on spectral sensitivity of meander-type, superconducting NbN thin-film single-photon detectors (SPDs), characterized by GHz counting rates of visible and near-infrared photons and negligible dark counts. Our SPDs exhibit experimentally determined quantum efficiencies ranging from ∼0.2% at the 1.55 μm wavelength to ∼70% at 0.4 μm. Spectral dependences of the detection efficiency (DE) at the 0.4 to 3.0-μm-wavelength range are presented. The exponential character of the DE dependence on wavelength, as well as its dependence versus bias current, is qualitatively explained in terms of superconducting fluctuations in our ultrathin, submicron-width superconducting stripes. The DE values of large-active-area NbN SPDs in the visible range are high enough for modern quantum communications. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 331 | |||
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| Author | Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers | Type | Journal Article | ||
| Year | 2004 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 84 | Issue | 11 | Pages | 1958-1960 |
| Keywords | NbN HEB mixers | ||||
| Abstract | We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz. |
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| Notes | Approved | no | |||
| Call Number | Serial | 352 | |||
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| Author | Korneev, A.; Kouminov, P.; Matvienko, V.; Chulkova, G.; Smirnov, K.; Voronov, B.; Gol'tsman, G. N.; Currie, M.; Lo, W.; Wilsher, K.; Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, Roman | ||||
| Title | Sensitivity and gigahertz counting performance of NbN superconducting single-photon detectors | Type | Journal Article | ||
| Year | 2004 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 84 | Issue | 26 | Pages | 5338-5340 |
| Keywords | SSPD, NEP, QE | ||||
| Abstract | We have measured the quantum efficiencysQEd, GHz counting rate, jitter, and noise-equivalentpowersNEPdof nanostructured NbN superconducting single-photon detectorssSSPDsdin thevisible to infrared radiation range. Our 3.5-nm-thick and 100- to 200-nm-wide meander-typedevices(total area 10310mm2), operating at 4.2 K, exhibit an experimental QE of up to 20% inthe visible range and,10% at 1.3 to 1.55mm wavelength and are potentially sensitive up tomidinfrareds,10mmdradiation. The SSPD counting rate was measured to be above 2 GHz withjitter,18 ps, independent of the wavelength. The devices’ NEP varies from,10−17W/Hz1/2for1.55mm photons to,10−20W/Hz1/2for visible radiation. Lowering the SSPD operatingtemperature to 2.3 K significantly enhanced its performance, by increasing the QE to,20% andlowering the NEP level to,3310−22W/Hz1/2, both measured at 1.26mm wavelength. | ||||
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| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 532 | |||
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| Author | Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory | ||||
| Title | Low noise and wide bandwidth of NbN hot-electron bolometer mixers | Type | Journal Article | ||
| Year | 2011 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 98 | Issue | Pages | 033507 (1 to 3) | |
| Keywords | NbN HEB mixer | ||||
| Abstract | We report a record double sideband noise temperature of 600 K (5hν/kB) offered by a NbN hot-electron bolometer receiver at 2.5 THz. Allowing for standing wave effects, this value was found to be constant in the intermediate frequency range 1–7 GHz, which indicates that the mixer has an unprecedentedly large noise bandwidth in excess of 7 GHz. The insight into this is provided by gain bandwidth measurements performed at the superconducting transition. They show that the dependence of the bandwidth on the mixer length follows the model for an HEB mixer with diffusion and phonon cooling of the hot electrons. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 638 | ||
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| Author | Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M. | ||||
| Title | Picosecond hot-electron energy relaxation in NbN superconducting photodetectors | Type | Journal Article | ||
| Year | 2000 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 76 | Issue | 19 | Pages | 2752-2754 |
| Keywords | NbN HEB detectors, two-temperature model, IF bandwidth | ||||
| Abstract | We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 856 | |||
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| Author | Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. | ||||
| Title | Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies | Type | Journal Article | ||
| Year | 1998 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 73 | Issue | 19 | Pages | 2814-2816 |
| Keywords | NbN HEB mixers, noise temperature, local oscillator power | ||||
| Abstract | In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 911 | |||
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| Author | Ferrari, S.; Kahl, O.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. | ||||
| Title | Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires | Type | Journal Article | ||
| Year | 2015 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 106 | Issue | 15 | Pages | 151101 (1 to 5) |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents. W. H. P. Pernice acknowledges support by the DFG Grant Nos. PE 1832/1-1 and PE 1832/1-2 and the Helmholtz society through Grant No. HIRG-0005. The Ph.D. education of O. Kahl is embedded in the Karlsruhe School of Optics and Photonics (KSOP). G. N. Goltsman acknowledges support by Russian Federation President Grant HШ-1918.2014.2 and Ministry of Education and Science of the Russian Federation Contract No.: RFMEFI58614X0007. A. Korneev acknowledges support by Statement Task No. 3.1846.2014/k. V. Kovalyuk acknowledges support by Statement Task No. 2327. We also acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) and the State of Baden-Württemberg through the DFG-Center for Functional Nanostructures (CFN) within subproject A6.4. We thank S. Kühn and S. Diewald for the help with device fabrication as well as B. Voronov and A. Shishkin for help with NbN thin film deposition and A. Semenov for helpful discussion about the detection mechanism of nanowire SSPD's. The authors declare no competing financial interests. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1211 | |||
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| Author | Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. | ||||
| Title | The electron-phonon relaxation time in thin superconducting titanium nitride films | Type | Journal Article | ||
| Year | 2013 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 25 | Pages | 252602 (1 to 4) |
| Keywords | disordered TiN films, electron-phonon relaxation time | ||||
| Abstract | We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors. The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 941 | ||
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| Author | Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. | ||||
| Title | Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm | Type | Journal Article | ||
| Year | 2010 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 97 | Issue | 13 | Pages | 131907 (1 to 3) |
| Keywords | SSPD, SNSPD, InAsP/InP quantum dots | ||||
| Abstract | By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364. | ||||
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1238 | |||
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| Author | Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. | ||||
| Title | Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers | Type | Journal Article | ||
| Year | 2016 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | 109 | Issue | 13 | Pages | 132602 |
| Keywords | HEB mixer, contacts | ||||
| Abstract | We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1107 | |||
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| Author | Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. | ||||
| Title | Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation | Type | Journal Article | ||
| Year | 2013 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 18 | Pages | 181121 (1 to 5) |
| Keywords | carbon nanotubes, CNT, THz radiation, SiO2 substrate | ||||
| Abstract | We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. | ||||
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| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1171 | |||
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| Author | Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lee, C.; Rockstuhl, C.; Semenov, A.; Gol'tsman, G.; Pernice, W. | ||||
| Title | Analysis of the detection response of waveguide-integrated superconducting nanowire single-photon detectors at high count rate | Type | Journal Article | ||
| Year | 2019 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 115 | Issue | 10 | Pages | 101104 |
| Keywords | SSPD, SNSPD, waveguide | ||||
| Abstract | Nanophotonic circuitry and superconducting nanowires have been successfully combined for detecting single photons, propagating in an integrated photonic circuit, with high efficiency and low noise and timing uncertainty. Waveguide-integrated superconducting nanowire single-photon detectors (SNSPDs) can nowadays be engineered to achieve subnanosecond recovery times and can potentially be adopted for applications requiring Gcps count rates. However, particular attention shall be paid to such an extreme count rate regime since artifacts in the detector functionality emerge. In particular, a count-rate dependent detection efficiency has been encountered that can compromise the accuracy of quantum detector tomography experiments. Here, we investigate the response of waveguide-integrated SNSPDs at high photon flux and identify the presence of parasitic currents due to the accumulation of charge in the readout electronics to cause the above-mentioned artifact in the detection efficiency. Our approach allows us to determine the maximum photon count rate at which the detector can be operated without adverse effects. Our findings are particularly important to avoid artifacts when applying SNSPDs for quantum tomography. We acknowledge support through ERC Consolidator Grant No. 724707 and from the Deutsche Forschungsgemeinschaft through Project No. PE 1832/5-1,2, as well as funding by the Volkswagen Foundation. This project has received funding from the European Union's Horizon 2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreement No. 675745. V.K. and G.G. acknowledge support from the Russian Science Foundation Project No. 16-12-00045 (NbN film deposition and testing). A.V. acknowledges support from the Karlsruhe School of Optics and Photonics (KSOP). |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1185 | |||
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| Author | Smirnov, K. V.; Divochiy, A. V.; Vakhtomin, Y. B.; Sidorova, M. V.; Karpova, U. V.; Morozov, P. V.; Seleznev, V. A.; Zotova, A. N.; Vodolazov, D. Y. | ||||
| Title | Rise time of voltage pulses in NbN superconducting single photon detectors | Type | Journal Article | ||
| Year | 2016 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 109 | Issue | 5 | Pages | 052601 |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector Rn, which appears after photon absorption, on its kinetic inductance Lk and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model. D.Yu.V. acknowledges the support from the Russian Foundation for Basic Research (Project No. 15-42-02365). K.V.S. acknowledges the financial support from the Ministry of Education and Science of the Russian Federation (Contract No. 3.2655.2014/K). |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1236 | |||
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