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Author Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G.
Title (up) Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers Type Journal Article
Year 2004 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 84 Issue 11 Pages 1958-1960
Keywords NbN HEB mixers
Abstract We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K

at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz.
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Call Number Serial 352
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Author Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D.
Title (up) Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors Type Journal Article
Year 2018 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 112 Issue 14 Pages 141101 (1 to 5)
Keywords graphene field effect transistors, FET
Abstract Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions.
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ISSN 0003-6951 ISBN Medium
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Notes Approved no
Call Number Serial 1309
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Author Jukna, A.; Kitaygorsky, J.; Pan, D.; Cross, A.; Perlman, A.; Komissarov, I.; Sobolewski, R.; Okunev, O.; Smirnov, K.; Korneev, A.; Chulkova, G.; Milostnaya, I.; Voronov, B.; Gol'tsman, G.
Title (up) Dynamics of hotspot formation in nanostructured superconducting stripes excited with single photons Type Journal Article
Year 2008 Publication Acta Physica Polonica A Abbreviated Journal Acta Physica Polonica A
Volume 113 Issue 3 Pages 955-958
Keywords SSPD, SNSPD
Abstract Dynamics of a resistive hotspot formation by near-infrared-wavelength single photons in nanowire-type superconducting NbN stripes was investigated. Numerical simulations of ultrafast thermalization of photon-excited nonequilibrium quasiparticles, their multiplication and out-diffusion from a site of the photon absorption demonstrate that 1.55 μm wavelength photons create in an ultrathin, two-dimensional superconducting film a resistive hotspot with the diameter which depends on the photon energy, and the nanowire temperature and biasing conditions. Our hotspot model indicates that under the subcritical current bias of the 2D stripe, the electric field penetrates the superconductor at the hotspot boundary, leading to suppression of the stripe superconducting properties and accelerated development of a voltage transient across the stripe.
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Notes Approved no
Call Number Serial 1414
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
Title (up) Effect of a high magnetic field on the spectrum of donors in InSb Type Journal Article
Year 1977 Publication Fizika i Tekhnika Poluprovodnikov Abbreviated Journal Fizika i Tekhnika Poluprovodnikov
Volume 11 Issue 12 Pages 2373-2375
Keywords InSb, energy spectrum, donors, high magnetic field
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Language Russian Summary Language Original Title
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Notes Воздействие сильного магнитного поля на спектр доноров в InSb Approved no
Call Number Serial 1729
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I.
Title (up) Effect of a strong magnetic field on the spectrum of donors in InSb Type Journal Article
Year 1978 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 11 Issue 12 Pages 1395-1397
Keywords InSb, spectrum of donors, strong magnetic field
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Call Number Serial 1725
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Author Nikogosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V.
Title (up) Effect of absorption on the efficiency of terahertz radiation generation in the metal waveguide partially filled with nonlinear crystal LiNbO3, DAST or ZnTe Type Journal Article
Year 2019 Publication J. Contemp. Phys. Abbreviated Journal J. Contemp. Phys.
Volume 54 Issue 1 Pages 97-104
Keywords nonlinear crystal, THz, waveguide
Abstract The influence of terahertz (THz) radiation absorption on the efficiency of generation of coherent THz radiation in the system ‘nonlinear-optical crystal partially filling the cross section of a rectangular metal waveguide’ has been investigated. The efficiency of the nonlinear frequency conversion of optical laser radiation to the THz range depends on the loss in the system and the fulfillment of the phase-matching (FM) condition in a nonlinear crystal. The method of partially filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. The phase matching is achieved by numerical determination of the thickness of the nonlinear crystal, that is the degree of partial filling of the waveguide. The attenuation of THz radiation caused by losses both in the metal walls of the waveguide and in the crystal was studied, taking into account the dimension of the cross section of the waveguide, the degree of partial filling, and the dielectric constant of the crystal. It is shown that the partial filling of the waveguide with a nonlinear crystal results in an increase in the efficiency of generation of THz radiation by an order of magnitude, owing to the decrease in absorption.
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Series Editor Series Title Abbreviated Series Title
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ISSN 1068-3372 ISBN Medium
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Notes Approved no
Call Number Serial 1289
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Author Nikoghosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V.
Title (up) Effect of absorption on the efficiency of THz radiation generation in a nonlinear crystal placed into a waveguide Type Journal Article
Year 2018 Publication Armenian J. Phys. Abbreviated Journal Armenian J. Phys.
Volume 11 Issue 4 Pages 257-262
Keywords THz, waveguide, nonlinear crystal
Abstract The effect of THz radiation absorption on the efficiency of generation of coherent THz radiation in a nonlinear optical crystal placed into a metal rectangular waveguide is studied. The efficiency of the nonlinear conversion of optical laser radiation to the THz band is also a function of the phase-matching (PM) condition inside the nonlinear crystal. The method of partial filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. Phase matching was obtained by the proper choice of the thickness of the nonlinear crystal, namely the degree of partial filling of the waveguide. We have studied the THz radiation attenuation caused by the losses in both the metal walls of the waveguide and in the crystal, taking into account the dimension of the cross section of the waveguide, the degree of partial filling and its dielectric constant.
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Series Editor Series Title Abbreviated Series Title
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ISSN 1829-1171 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1291
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R.
Title (up) Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium Type Journal Article
Year 1986 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 64 Issue 4 Pages 889-897
Keywords Ge, trapping of free carriers
Abstract Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).
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Notes Approved no
Call Number Serial 1707
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Author Elant'ev, A. I.; Karasik, B. S.
Title (up) Effect of high-frequency current on Nb superconductive film in resistive state Type Journal Article
Year 1989 Publication Sov. J. Low Temp. Phys. Abbreviated Journal Sov. J. Low Temp. Phys.
Volume 15 Issue 7 Pages 379-383
Keywords Nb HEB
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Notes Approved no
Call Number Serial 882
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Author Lusche, R.; Semenov, A.; Korneeva, Y.; Trifonov, A.; Korneev, A.; Gol'tsman, G.; Hübers, H.-W.
Title (up) Effect of magnetic field on the photon detection in thin superconducting meander structures Type Journal Article
Year 2014 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 89 Issue 10 Pages 104513 (1 to 7)
Keywords NbN SSPD, SNSPD
Abstract We have studied the influence of an externally applied magnetic field on the photon and dark count rates of meander-type niobium nitride superconducting nanowire single-photon detectors. Measurements have been performed at a temperature of 4.2 K, and magnetic fields up to 250 mT have been applied perpendicularly to the meander plane. While photon count rates are field independent at weak applied fields, they show a strong dependence at fields starting from approximately ±25 mT. This behavior, as well as the magnetic field dependence of the dark count rates, is in good agreement with the recent theoretical model of vortex-assisted photon detection and spontaneous vortex crossing in narrow superconducting lines. However, the local reduction of the superconducting free energy due to photon absorption, which is the fitting parameter in the model, increases much slower with the photon energy than the model predicts. Furthermore, changes in the free-energy during photon counts and dark counts depend differently on the current that flows through the meander. This indicates that photon counts and dark counts occur in different parts of the meander.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1098-0121 ISBN Medium
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Notes Approved no
Call Number Serial 1367
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Author Lusche, R.; Semenov, A.; Il'in, K.; Korneeva, Y.; Trifonov, A.; Korneev, A.; Hubers, H.; Siegel, M.; Gol'tsman, G.
Title (up) Effect of the wire width and magnetic field on the intrinsic detection efficiency of superconducting nanowire single-photon detectors Type Journal Article
Year 2013 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 23 Issue 3 Pages 2200205-2200205
Keywords SSPD, SNSPD
Abstract We present thorough measurements of the intrinsic detection efficiency in the wavelength range from 350 to 2500 nm for meander-type TaN and NbN superconducting nanowire single-photon detectors with different widths of the nanowire. The width varied from 70 nm to 130 nm. The open-beam configuration allowed us to accurately normalize measured spectra and to extract the intrinsic detection efficiency. For detectors from both materials the intrinsic detection efficiency at short wavelengths amounts at 100% and gradually decreases at wavelengths larger than the specific cut-off wavelengths, which decreases with the width of the nanowire. Furthermore, we show that applying weak magnetic fields perpendicular to the meander plane decreases the smallest detectable photon flux.
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ISSN 1051-8223 ISBN Medium
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Notes Approved no
Call Number Serial 1376
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Author Lusche, R.; Semenov, A.; Ilin, K.; Siegel, M.; Korneeva, Y.; Trifonov, A.; Korneev, A.; Goltsman, G.; Vodolazov, D.; Hübers, H.-W.
Title (up) Effect of the wire width on the intrinsic detection efficiency of superconducting-nanowire single-photon detectors Type Journal Article
Year 2014 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.
Volume 116 Issue 4 Pages 043906 (1 to 9)
Keywords NbN SSPD, SNSPD, TaN
Abstract A thorough spectral study of the intrinsic single-photon detection efficiency in superconducting TaN and NbN nanowires with different widths has been performed. The experiment shows that the cut-off of the intrinsic detection efficiency at near-infrared wavelengths is most likely controlled by the local suppression of the barrier for vortex nucleation around the absorption site. Beyond the cut-off quasi-particle diffusion in combination with spontaneous, thermally activated vortex crossing explains the detection process. For both materials, the reciprocal cut-off wavelength scales linearly with the wire width where the scaling factor agrees with the hot-spot detection model.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979 ISBN Medium
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Notes Approved no
Call Number Serial 1357
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Author Gershenzon, E. M.; Gol’tsman, G. N.; Gousev, Y. P.; Elant’ev, A. I.; Semenov, A. D.
Title (up) Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films Type Journal Article
Year 1991 Publication IEEE Trans. Magn. Abbreviated Journal IEEE Trans. Magn.
Volume 27 Issue 2 Pages 1317-1320
Keywords YBCO, HTS, Nb HEB mixers
Abstract A theory of an electron-heating mixer which makes it possible to calculate all the characteristics of the device is developed. It is shown that positive conversion gain is possible for such a mixer in the millimeter to near-infrared wavelength range. The dynamic range and the optimum heterodyne power can be selected from a very wide interval by varying the mixing element volume. Measurements made for Nb within the frequency range of 120-750 GHz confirm the theory. The conversion loss obtained at T=1.6 K and normalized to the element reaches 0.3 dB in the intermediate frequency band of 40 MHz; the possible noise temperature is 50 K. The estimation of noise temperature and output band for YBaCuO at T=77 yields 200 K and more than 10 GHz, respectively.
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ISSN 1941-0069 ISBN Medium
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Notes Approved no
Call Number Serial 1681
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Author Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
Title (up) Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures Type Journal Article
Year 1995 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 61 Issue 7 Pages 591-595
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.
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Notes Approved no
Call Number Serial 1624
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Author Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A.
Title (up) Electron energy relaxation in disordered superconducting NbN films Type Journal Article
Year 2020 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 102 Issue 5 Pages 054501 (1 to 15)
Keywords NbN SSPD, SNSPD, HEB, bandwidth, relaxation time
Abstract We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material.
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ISSN 2469-9950 ISBN Medium
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Notes Approved no
Call Number Serial 1266
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