| Records |
| Author |
Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. |
| Title |
Performance of THz components based on microstrip PECVD SiNx technology |
Type |
Journal Article |
Year  |
2017 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
| Volume |
7 |
Issue |
6 |
Pages |
765-771 |
| Keywords |
transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices |
| Abstract |
We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope. |
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2156-342X |
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no |
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Serial |
1294 |
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| Author |
Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. |
| Title |
Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits |
Type |
Journal Article |
| Year |
2017 |
Publication |
Optica |
Abbreviated Journal |
Optica |
| Volume |
4 |
Issue |
5 |
Pages |
557-562 |
| Keywords |
Waveguide integrated superconducting single-photon detectors; Nanophotonics and photonic crystals; Quantum detectors; Spectrometers and spectroscopic instrumentation |
| Abstract |
The detection of individual photons by superconducting nanowire single-photon detectors is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multicolor imaging techniques, such as single-photon spectroscopy, fluorescence resonance energy transfer microscopy, and fluorescence correlation spectroscopy, wavelength discrimination is essential and mandates spectral separation prior to detection. Here, we adopt an approach borrowed from quantum photonic integration to realize a compact and scalable waveguide-integrated single-photon spectrometer capable of parallel detection on multiple wavelength channels, with temporal resolution below 50 ps and dark count rates below 10 Hz at 80% of the devices' critical current. We demonstrate multidetector devices for telecommunication and visible wavelengths, and showcase their performance by imaging silicon vacancy color centers in diamond nanoclusters. The fully integrated hybrid superconducting nanophotonic circuits enable simultaneous spectroscopy and lifetime mapping for correlative imaging and provide the ingredients for quantum wavelength-division multiplexing on a chip. |
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no |
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RPLAB @ kovalyuk @ |
Serial |
1119 |
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| Author |
Klapwijk, T. M.; Semenov, A. V. |
| Title |
Engineering physics of superconducting hot-electron bolometer mixers |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
| Volume |
7 |
Issue |
6 |
Pages |
627-648 |
| Keywords |
HEB mixers |
| Abstract |
Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments. |
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2156-342X |
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no |
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Serial |
1292 |
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Korneeva, Y.; Florya, I.; Vdovichev, S.; Moshkova, M.; Simonov, N.; Kaurova, N.; Korneev, A.; Goltsman, G. |
| Title |
Comparison of hot spot formation in nbn and mon thin superconducting films after photon absorption |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
27 |
Issue |
4 |
Pages |
1-4 |
| Keywords |
MoNx SSPD |
| Abstract |
In superconducting single-photon detectors (SSPD), the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here, we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoN ∞ detectors, we study the dependence of detection efficiency on bias current, photon energy, and strip width, and compare it with NbN SSPD. We observe nonlinear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current, which we attribute to longer electron-phonon interaction time. |
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Edition |
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| ISSN |
1051-8223 |
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no |
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Serial |
1325 |
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Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Shcherbatenko, M.; Lobanov, Y.; Ozhegov, R.; Korneev, A.; Kaurova, N.; Voronov, B.; Pernice, W.; Gol'tsman, G. |
| Title |
On-chip coherent detection with quantum limited sensitivity |
Type |
Journal Article |
| Year |
2017 |
Publication |
Sci Rep |
Abbreviated Journal |
Sci Rep |
| Volume |
7 |
Issue |
1 |
Pages |
4812 |
| Keywords |
waveguide, SSPD, SNSPD |
| Abstract |
While single photon detectors provide superior intensity sensitivity, spectral resolution is usually lost after the detection event. Yet for applications in low signal infrared spectroscopy recovering information about the photon's frequency contributions is essential. Here we use highly efficient waveguide integrated superconducting single-photon detectors for on-chip coherent detection. In a single nanophotonic device, we demonstrate both single-photon counting with up to 86% on-chip detection efficiency, as well as heterodyne coherent detection with spectral resolution f/f exceeding 10(11). By mixing a local oscillator with the single photon signal field, we observe frequency modulation at the intermediate frequency with ultra-low local oscillator power in the femto-Watt range. By optimizing the nanowire geometry and the working parameters of the detection scheme, we reach quantum-limited sensitivity. Our approach enables to realize matrix integrated heterodyne nanophotonic devices in the C-band wavelength range, for classical and quantum optics applications where single-photon counting as well as high spectral resolution are required simultaneously. |
| Address |
National Research University Higher School of Economics, Moscow, 101000, Russia. ggoltsman@hse.ru |
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2045-2322 |
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PMID:28684752; PMCID:PMC5500578 |
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no |
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RPLAB @ kovalyuk @ |
Serial |
1129 |
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Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. |
| Title |
Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. Terahertz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. Terahertz Sci. Technol. |
| Volume |
7 |
Issue |
1 |
Pages |
53-59 |
| Keywords |
NbN HEB mixer |
| Abstract |
In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers. |
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Edition |
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2156-3446 |
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no |
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Serial |
1330 |
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| Author |
Lobanov, Y.; Shcherbatenko, M.; Semenov, A.; Kovalyuk, V.; Kahl, O.; Ferrari, S.; Korneev, A.; Ozhegov, R.; Kaurova, N.; Voronov, B. M.; Pernice, W. H. P.; Gol'tsman, G. N. |
| Title |
Superconducting nanowire single photon detector for coherent detection of weak signals |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
27 |
Issue |
4 |
Pages |
1-5 |
| Keywords |
NbN SSPD mixer, SNSPD, nanophotonic waveguide |
| Abstract |
Traditional photon detectors are operated in the direct detection mode, counting incident photons with a known quantum efficiency. Here, we have investigated a superconducting nanowire single photon detector (SNSPD) operated as a photon counting mixer at telecommunication wavelength around 1.5 μm. This regime of operation combines excellent sensitivity of a photon counting detector with excellent spectral resolution given by the heterodyne technique. Advantageously, we have found that low local oscillator (LO) power of the order of hundreds of femtowatts to a few picowatts is sufficient for clear observation of the incident test signal with the sensitivity approaching the quantum limit. With further optimization, the required LO power could be significantly reduced, which is promising for many practical applications, such as the development of receiver matrices or recording ultralow signals at a level of less-than-one-photon per second. In addition to a traditional NbN-based SNSPD operated with normal incidence coupling, we also use detectors with a travelling wave geometry, where a NbN nanowire is placed on the top of a Si 3 N 4 nanophotonic waveguide. This approach is fully scalable and a large number of devices could be integrated on a single chip. |
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Edition |
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| ISSN |
1051-8223 |
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no |
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Serial |
1206 |
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| Author |
Pentin, Ivan; Finkel, Matvey; Maslennikov, Sergey; Vakhtomin, Yuri; Smirnov, Konstantin; Kaurova, Nataliya; Goltsman, Gregory |
| Title |
Superconducting hot-electron-bolometer mixers for the mid-IR |
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Journal Article |
| Year |
2017 |
Publication |
Rus. J. Radio Electron. |
Abbreviated Journal |
Rus. J. Radio Electron. |
| Volume |
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Issue |
10 |
Pages |
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| Keywords |
IR NbN HEB mixers |
| Abstract |
The work presents the result of development of the NbN superconducting hot-electron-bolometer (HEB) mixer. The sensitive element of the mixer is directly coupled to mid-IR radiation, and doesn’t have planar metallic antenna. Investigations of noise characteristics of NbN HEB mixer were performed at the frequency 28.4 THz (λ = 10.6 µm) by using gas-discharge CW CO2-laser without consideration of optical and electrical losses in the heterodyne receiver. The noise temperature of NbN HEB mixer with the size of the sensitive element 10 µm × 10 µm was 2320 K (~ 1.5hν/kB) at the heterodyne frequency of 28.4 THz. The noise temperature was determined by measuring the Y-factor taking into account the term which describes fluctuations of zero-point oscillations in accordance with the fluctuation-dissipation theorem of Calle-Welton. Isothermal method was used to estimate the absorbed heterodyne radiation power which was 9 µW at the optimal operating point for the minimum noise temperature of NbN HEB mixer. |
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Russian |
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1684-1719 |
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http://jre.cplire.ru/jre/oct17/9/abstract.html (Russian) Гетеродинный приемник со сверхпроводниковым смесителем на эффекте электронного разогрева для среднего инфракрасного диапазона |
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no |
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Serial |
1747 |
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Pyatkov, F.; Khasminskaya, S.; Kovalyuk, V.; Hennrich, F.; Kappes, M. M.; Goltsman, G. N.; Pernice, W. H. P.; Krupke, R. |
| Title |
Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers |
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Journal Article |
| Year |
2017 |
Publication |
Beilstein J. Nanotechnol. |
Abbreviated Journal |
Beilstein J. Nanotechnol. |
| Volume |
8 |
Issue |
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Pages |
38-44 |
| Keywords |
carbon nanotubes; CNT; infrared; integrated optics devices; nanomaterials |
| Abstract |
Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources. |
| Address |
Department of Materials and Earth Sciences, Technische Universitat Darmstadt, Darmstadt 64287, Germany |
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Edition |
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2190-4286 |
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PMID:28144563; PMCID:PMC5238692 |
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no |
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RPLAB @ kovalyuk @ |
Serial |
1109 |
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Seliverstov, S. V.; Anfertyev, V. A.; Tretyakov, I. V.; Ozheredov, I. A.; Solyankin, P. M.; Revin, L. S.; Vaks, V. L.; Rusova, A. A.; Goltsman, G. N.; Shkurinov, A. P. |
| Title |
Terahertz heterodyne receiver with an electron-heating mixer and a heterodyne based on the quantum-cascade laser |
Type |
Journal Article |
| Year |
2017 |
Publication |
Radiophys. Quant. Electron. |
Abbreviated Journal |
Radiophys. Quant. Electron. |
| Volume |
60 |
Issue |
7 |
Pages |
518-524 |
| Keywords |
NbN HEB mixer, QCL |
| Abstract |
We study characteristics of the laboratory prototype of a terahertz heterodyne receiver with an electron-heating mixer and a heterodyne based on the quantum-cascade laser. The results obtained demonstrate the possibility to use this receiver as a basis for creation of a high-sensitivity terahertz spectrometer, which can be used in many basic and practical applications. A significant advantage of this receiver will be the possibility of placing the mixer and heterodyne in the same cryostat, which will reduce the device dimensions considerably. The obtained experimental results are analyzed, and methods of optimizing the parameters of the receiver are proposed. |
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0033-8443 |
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no |
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1322 |
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Titova, N.; Kardakova, A. I.; Tovpeko, N.; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S. R.; Williams, O. A.; Goltsman, G. N.; Klapwijk, T. M. |
| Title |
Slow electron–phonon cooling in superconducting diamond films |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
27 |
Issue |
4 |
Pages |
1-4 |
| Keywords |
superconducting diamond films, electron-phonon cooling |
| Abstract |
We have measured the electron-phonon energy-relaxation time, τ eph , in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T -2-dependence. The data are consistent with the values of τ eph previously reported for single-crystal boron-doped diamond films epitaxially grown on diamond substrate. Such a noticeable slow electron-phonon relaxation in boron-doped diamond, in combination with a high normal-state resistivity, confirms a potential of superconducting diamond for ultrasensitive superconducting bolometers. |
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1051-8223 |
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no |
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Serial |
1168 |
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Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
| Title |
Development of a silicon membrane-based multipixel hot electron bolometer receiver |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
27 |
Issue |
4 |
Pages |
1-5 |
| Keywords |
Multi-pixel, NbN HEB, silicon-on-insulator, horn array |
| Abstract |
We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. |
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1051-8223 |
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no |
| Call Number |
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Serial |
1324 |
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| Author |
Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
| Title |
Photon absorption near the gap frequency in a hot electron bolometer |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
27 |
Issue |
4 |
Pages |
1-4 |
| Keywords |
NBN HEB mixer |
| Abstract |
The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap. |
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1558-2515 |
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1331 |
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| Author |
Vorobyov, V. V.; Kazakov, A. Y.; Soshenko, V. V.; Korneev, A. A.; Shalaginov, M. Y.; Bolshedvorskii, S. V.; Sorokin, V. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Voronov, B. M.; Shalaev, V. M.; Akimov, A. V.; Goltsman, G. N. |
| Title |
Superconducting detector for visible and near-infrared quantum emitters [Invited] |
Type |
Journal Article |
| Year |
2017 |
Publication |
Opt. Mater. Express |
Abbreviated Journal |
Opt. Mater. Express |
| Volume |
7 |
Issue |
2 |
Pages |
513-526 |
| Keywords |
SSPD, SNSPD |
| Abstract |
Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500–1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial. |
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2159-3930 |
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no |
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1234 |
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Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N. |
| Title |
Superconductivity in highly disordered NbN nanowires |
Type |
Journal Article |
| Year |
2016 |
Publication |
Nanotechnol. |
Abbreviated Journal |
Nanotechnol. |
| Volume |
27 |
Issue |
47 |
Pages |
47lt02 (1 to 8) |
| Keywords |
NbN nanowires |
| Abstract |
The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links. |
| Address |
National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia |
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English |
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0957-4484 |
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| Notes |
PMID:27782000 |
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no |
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1332 |
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