| Records |
Author  |
Budyanskij, M. Ya.; Sejdman, L. A.; Voronov, B. M.; Gubkina, T. O. |
| Title |
Increase of reproducibility in production of superconducting thin films of niobium nitride |
Type |
Journal Article |
| Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume |
5 |
Issue |
10 |
Pages |
1950-1954 |
| Keywords |
NbN films |
| Abstract |
Technique to control the composition of gas medium in the reactive magnetron discharge and the composition of the deposited films of niobium nitride using electrical parameters of discharge only, in particular, by δU = Up – Uar value at contant stabilized discharge current is described. Technique to select optimal condition for deposition of niobium nitride films when the films have composition meeting chemical formula, is suggested. Thin films of niobium nitride with up to 7 nm thickness and with rather high temperature of transition into superconducting state Tk > 10 K) and with low width of transition (δ < 0.6 K), are obtained. It is determined, that substrate material and dielectric sublayer do not affect. Tk value, while difference in coefficients of thermal expansion of substrate and of film affects δTk value. |
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| ISSN |
0131-5366 |
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1675 |
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| Author |
Cao, Aiqin; Jiang, L.; Chen, S.H.; Antipov, S.V.; Shi, S.C. |
| Title |
IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer |
Type |
Conference Article |
| Year |
2007 |
Publication |
Proc. International conference on microwave and millimeter wave technology |
Abbreviated Journal |
Proc. ICMMT |
| Volume |
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Issue |
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Pages |
1-3 |
| Keywords |
HEB, mixer, gain bandwidth |
| Abstract |
In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases. |
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Builin |
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RPLAB @ lobanovyury @ |
Serial |
575 |
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| Author |
Casaburi, A.; Ejrnaes, M.; Quaranta, O.; Gaggero, A.; Mattioli, F.; Leoni, R.; Voronov, B.; Gol'tsman, G.; Lisitskiy, M.; Esposito, E.; Nappi, C.; Cristiano, R.; Pagano, S. |
| Title |
Experimental characterization of NbN nanowire optical detectors with parallel stripline configuration |
Type |
Conference Article |
| Year |
2008 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
97 |
Issue |
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Pages |
012265 (1 to 6) |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We have developed a novel geometrical configuration for NbN-based superconducting single photon optical detector (SSPD) that achieves two goals: a much lower intrinsic impedance, and a consequently greater bandwidth, and a much larger signal amplitude compared to the standard meandered configuration. This has been obtained by implementing a properly designed parallel stripline structure where a cascade switching mechanism occurs when one of the striplines is hit by an optical photon. The overall switching occurs synchronously and in a very short time, giving rise to a strong and fast voltage pulse. The SSPD have been realized using state of the art NbN deposition technology and e-beam lithography. The strips are 100 nm wide and 5 μm long and have been realized with 4 nm NbN film on sapphire and Si substrate. We report on experimental characterization of such novel devices. The performances of the proposed novel type of SSPD are compared with standard SSPD design and results in terms of signal amplitude, risetime and effective detection area. |
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IOP Publishing |
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1742-6596 |
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8th European Conference on Applied Superconductivity (EUCAS 2007) |
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no |
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Serial |
1416 |
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| Author |
Chen, J.; Kang, L.; Jin, B. B.; Xu, W. W.; Wu, P. H.; Zhang, W.; Jiang, L.; Li, N.; Shi, S. C.; Gol'tsman, G. N. |
| Title |
Properties of terahertz superconducting hot electron bolometer mixers |
Type |
Journal Article |
| Year |
2008 |
Publication |
Int. J. Terahertz Sci. Technol. |
Abbreviated Journal |
Int. J. Terahertz Sci. Technol. |
| Volume |
1 |
Issue |
1 |
Pages |
37-41 |
| Keywords |
NbN HEB mixers, noise temperature |
| Abstract |
A quasi-optical superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixer has been fabricated and measured in the terahertz (THz) frequency range of 0.5~2.52 THz. A receiver noise temperature of 2000 K at 2.52 THz has been obtained for the mixer without corrections. Also, the effect of a Parylene C anti-reflection (AR) coating on the silicon (Si) lens has been studied. |
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no |
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Serial |
1417 |
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Cherednichenko, S.; Kroug, M.; Khosropanah, P.; Adam, A.; Merkel, H.; Kolberg, E.; Loudkov, D.; Voronov, B.; Gol'tsman, G.; Richter, H.; Hübers, H. W. |
| Title |
A broadband terahertz heterodyne receiver with an NbN HEB mixer |
Type |
Conference Article |
| Year |
2002 |
Publication |
Proc. 13th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 13th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
85-95 |
| Keywords |
NbN HEB mixers |
| Abstract |
We present a broadband and low noise heterodyne receiver for 1.4-1.7 THz designed for the Hershel Space Observatory. A phonon- cooled NbN HEB mixer was integrated with a normal metal double- slot antenna and an elliptical silicon lens. DSB receiver noise temperature Tr was measured from 1 GHz through 8GHz intermediate frequency band with 50 MHz instantaneous bandwidth. At 4.2 K bath temperature and at 1.6 THz LO frequency Tr is 800 K with the receiver noise bandwidth of 5 GHz. While at 2 K bath temperature Tr was as low as 700 K. At 0.6 THz and 1.1 THz a spiral antenna integrated NbN HEB mixer showed the receiver noise temperature 500 K and 800 K, though no antireflection coating was used in this case. Tr of 1100 K was achieved at 2.5 THz while the receiver noise bandwidth was 4 GHz. |
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Cambridge, MA, USA |
Editor |
Harward University |
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no |
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Serial |
332 |
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| Author |
Cherednichenko, S.; Kroug, M.; Merkel, H.; Kollberg, E.; Loudkov, D.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Gershenzon, E. |
| Title |
Local oscillator power requirement and saturation effects in NbN HEB mixers |
Type |
Conference Article |
| Year |
2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 12th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
273-285 |
| Keywords |
NbN HEB mixers, LO power, local oscillator power, saturation effect, dynamic range |
| Abstract |
The local oscillator power required for NbN hot-electron bolometric mixers (P LO ) was investigated with respect to mixer size, critical temperature and ambient temperature. P LO can be decreased by a factor of 10 as the mixer size decreases from 4×0.4 µm 2 to 0.6×0.13 µm 2 . For the smallest volume mixer the optimal local oscillator power was found to be 15 nW. We found that for such mixer no signal compression was observed up to an input signal of 2 nW which corresponds to an equivalent input load of 20,000 K. For a constant mixer volume, reduction of T c can decrease optimal local oscillator power at least by a factor of 2 without a deterioration of the receiver noise temperature. Bath temperature was found to have minor effect on the receiver characteristics. |
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San Diego, CA, USA |
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Jet Propulsion Laboratory, California Inst.it.u.t.e of Technology |
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no |
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Serial |
318 |
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| Author |
Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. |
| Title |
Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes |
Type |
Journal Article |
| Year |
2007 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
101 |
Issue |
12 |
Pages |
124508 (1 to 6) |
| Keywords |
HEB, mixer, membrane |
| Abstract |
The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach. |
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0021-8979 |
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no |
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560 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J. M.; Delorme, Y.; Feret, A.; Hübers, H. W.; Semenov, A. D.; Gol'tsman, G. N. |
| Title |
2.5 THz multipixel heterodyne receiver based on NbN HEB mixers |
Type |
Conference Article |
| Year |
2006 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
6275 |
Issue |
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Pages |
62750I (1 to 11) |
| Keywords |
HEB, mixer, membrane |
| Abstract |
A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation. |
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561 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J.-M.; Delorme, Y.; Feret, A.; Hübers, H.-W.; Semenov, A. D.; Gol’tsman, G. N. |
| Title |
2.5 THz multipixel heterodyne receiver based on NbN HEB mixers |
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Abstract |
| Year |
2007 |
Publication |
Proc. 18th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 18th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
112 |
| Keywords |
NbN HEB mixers |
| Abstract |
A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4 / SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. Measurements of the mixers sensitivity and the input RF band are presented, and compared against calculations. |
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no |
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Serial |
1419 |
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| Author |
Cherednichenko, S.; Drakinskiy, V.; Lecomte, B.; Dauplay, F.; Krieg, J.-M.; Delorme, Y.; Feret, A.; Hübers, H.-W.; Semenov, A.D.; Gol’tsman, G.N. |
| Title |
Terahertz heterodyne array based on NbN HEB mixers |
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Abstract |
| Year |
2008 |
Publication |
Proc. 19th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
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Issue |
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Pages |
43 |
| Keywords |
NbN HEB mixers array |
| Abstract |
A 16 pixel heterodyne receiver for 2.5 THz is been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4 / SiO2 membranes. Miniature mirrors (one per pixel) and back short for the antenna were used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4 / SiO 2 membranes was found to be about 3 GHz, when an MgO buffer layers is applied on the membrane. We will also present the progress in the camera heterodyne tests. |
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1411 |
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