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Author (up) Ekström, H.; Karasik, B.; Kollberg, E.; Gol'tsman, G.; Gershenzon, E. url  openurl
  Title 350 GHz NbN hot electron bolometer mixer Type Conference Article
  Year 1995 Publication Proc. 6th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 6th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 269-283  
  Keywords NbN HEB mixers  
  Abstract Superconducting NbN hot-electron bolometer (HEB) mixer devices have been fabricated and measured at 350 GHz. The HEB is integrated with a double dipole antenna on an extended crystalline quartz hyper hemispherical substrate lens. Heterodyne measurement gave a -3 dB bandwidth, mainly determined by the electron- phonon interaction time, of about 680 and 1000 MHz for two different films with Tc = 8.5 and 11 K respectively. The measured DSB receiver noise temperature is around 3000 K at 800 MHz IF frequency. The main contribution to the output noise from the device is due to electron temperature fluctuations with the equivalent output noise temperature TFL-100 K. TH, has the same frequency dependence as the IF response. The contribution from Johnson noise is of the order of T. The RF coupling loss is estimated to be = 6 dB. The film with lower Tc, had an estimated intrinsic low-frequency conversion loss = 7 dB, while the other film had a conversion loss as high as 14 dB. The difference in intrinsic conversion loss is explained by less uniform absorption of radiation. Measurements of the small signal impedance shows a transition of the output impedance from the DC differential resistance Rd=dV/dI in the low frequency limit to the DC resistance R 0 =Uoff 0 in the bias point for frequencies above 3 GHz. We judge that the optimum shape of the IV-characteristic is more easily obtained at THz frequencies where the main restriction in performance should come from problems with the RF coupling.  
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  Notes Approved no  
  Call Number Serial 1628  
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Author (up) Ekström, H.; Karasik, B.; Kollberg, E.; Yngvesson, K. S. url  openurl
  Title Investigation of a superconducting hot electron mixer Type Conference Article
  Year 1994 Publication Proc. 5th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 5th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 169-188  
  Keywords HEB mixers  
  Abstract Mixing at 20 GHz in niobium superconducting thin film strips in the resistive state is studied. Experiments give evidence that electron-heating is the main cause of the non linear phenomena. The requirements on the mode of operation and on the film parameters for small conversion loss and the possibility of conversion gain are discussed. Measurements indicate a minimum intrinsic conversion loss around 1 dB with a sharp drop for the lowest voltage bias-points, and a DSB mixer noise temperature between 100 and 450 K at 20 GHz. The device output noise temperature at the mixer operating point can be as low as 30-50 K. A simple theory is presented, which is based on the assumption that the small signal resistance is linearly dependent on power. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1642  
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Author (up) Ekstrom, H.; Karasik, B.; Weikle, R.; Yngvesson, K. S.; Gol’tsman, G.; Kollberg, E.; Gershenzon, E. url  doi
openurl 
  Title Mixers using superconducting Nb films in the resistive state Type Conference Article
  Year 1993 Publication 23rd European Microwave Conf. Abbreviated Journal 23rd European Microwave Conf.  
  Volume Issue Pages 787-789  
  Keywords Nb HEB mixers  
  Abstract The mixing of 20 GHz radiation in a Nb superconducting film in the resistive state was studied. The experiment gave evidence of electron-heating to be the origin of the non-linear phenomenon. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are determined. Our measurements indicate a conversion loss of about 6-8 dB. The hot-electron bolometer is considered to be very promising for use in heterodyne receivers in a wide frequency range from microwaves to terahertz frequencies.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1651  
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Author (up) Ekström, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. url  openurl
  Title Phonon cooled ultra thin NbN hot electron bolometer mixers at 620 GHz Type Conference Article
  Year 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 8th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 29-35  
  Keywords NbN HEB mixers  
  Abstract We have measured the noise performance and gain bandwidth of 35 A thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. A double-sideband receiver noise temperature less than 1300 K has been obtained with a 3 dB bandwidth of GHz. The gain bandwidth is 3.2 GHz. A lower noise temperature of 1100 K has been achieved with an improved set-up. The mixer output noise dominated by thermal fluctuations is about 50-60 K, and the SSB receiver and intrinsic conversion gain is about -18 and -12 dB, respectively. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1604  
Permanent link to this record
 
 
Author (up) Ekström, H.; Kroug, M.; Belitsky, V.; Kollberg, E.; Olsson, H.; Goltsman, G.; Gershenzon, E.; Yagoubov, P.; Voronov, B.; Yngvesson, S. url  openurl
  Title Hot electron mixers for THz applications Type Conference Article
  Year 1996 Publication Proc. 30th ESLAB Abbreviated Journal Proc. 30th ESLAB  
  Volume Issue Pages 207-210  
  Keywords NbN HEB mixers  
  Abstract We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.  
  Address Noordwijk, Netherlands  
  Corporate Author Thesis  
  Publisher Place of Publication Editor Rolfe, E. J.; Pilbratt, G.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Submillimetre and Far-Infrared Space Instrumentation  
  Notes Approved no  
  Call Number Serial 1606  
Permanent link to this record
 
 
Author (up) Elant'ev, A. I.; Karasik, B. S. openurl 
  Title Effect of high-frequency current on Nb superconductive film in resistive state Type Journal Article
  Year 1989 Publication Sov. J. Low Temp. Phys. Abbreviated Journal Sov. J. Low Temp. Phys.  
  Volume 15 Issue 7 Pages 379-383  
  Keywords Nb HEB  
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  Notes Approved no  
  Call Number Serial 882  
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Author (up) Elantev, Andrey I.; Karasik, Boris S. url  openurl
  Title Noise temperature of a superconducting hot-electron mixer Type Conference Article
  Year 1994 Publication Proc. 5th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 5th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 225  
  Keywords HEB mixers  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1645  
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Author (up) Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E. url  doi
openurl 
  Title Amplification of a Raman scattering signal by carbon nanotubes Type Journal Article
  Year 2018 Publication Dokl. Phys. Abbreviated Journal Dokl. Phys.  
  Volume 63 Issue 12 Pages 496-498  
  Keywords carbon nanotubes, CNT, Raman scattering, RLS  
  Abstract The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1028-3358 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1775  
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Author (up) Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V. doi  openurl
  Title Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system Type Conference Article
  Year 2017 Publication EPJ Web of Conferences Abbreviated Journal EPJ Web of Conferences  
  Volume 132 Issue 2 Pages 2  
  Keywords  
  Abstract Recently bright-light control of the SSPD has been

demonstrated. This attack employed a “backdoor” in the detector biasing

scheme. Under bright-light illumination, SSPD becomes resistive and

remains “latched” in the resistive state even when the light is switched off.

While the SSPD is latched, Eve can simulate SSPD single-photon response

by sending strong light pulses, thus deceiving Bob. We developed the

experimental setup for investigation of a dependence on latching threshold

of SSPD on optical pulse length and peak power. By knowing latching

threshold it is possible to understand essential requirements for

development countermeasures against blinding attack on quantum key

distribution system with SSPDs.		  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
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  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1116  
Permanent link to this record
 
 
Author (up) Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. url  doi
openurl 
  Title Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system Type Conference Article
  Year 2017 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 132 Issue Pages 01004 (1 to 2)  
  Keywords QKD, SSPD, SNSPD  
  Abstract Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched” in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1327  
Permanent link to this record
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