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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. |
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Title |
Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium |
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Journal Article |
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Year |
1986 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
64 |
Issue |
4 |
Pages |
889-897 |
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Keywords |
Ge, trapping of free carriers |
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Abstract |
Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3). |
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1707 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D. |
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Title |
Submillimeter backward wave tube spectrometer for measuring superconducting film transmission |
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Journal Article |
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Year |
1983 |
Publication |
Pribory i Tekhnika Eksperimenta |
Abbreviated Journal |
Pribory i Tekhnika Eksperimenta |
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Volume |
26 |
Issue |
5 |
Pages |
134-137 |
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Keywords |
BWO spectroscopy, spectrometer, transmission |
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Abstract |
A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV |
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Russian |
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0032-8162 |
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Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок |
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1713 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches |
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Conference Article |
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1992 |
Publication |
Progress in High Temperature Superconductivity |
Abbreviated Journal |
Progress in High Temperature Superconductivity |
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32 |
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190-195 |
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Keywords |
superconducting films, heating of electrons |
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International Conference on High Temperature Superconductivity and Localization Phenomena , Moscow, Russia , 11 – 15 May 1991 |
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https://books.google.co.kr/books?hl=en&lr=&id=uCI0DwAAQBAJ&oi=fnd&pg=PA190&ots=z7WGjXYWr4&sig=TQ6G6dKsmcj4faYe1ZLw_BFmps8 |
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1666 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation |
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Journal Article |
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Year |
1990 |
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Solid State Communications |
Abbreviated Journal |
Solid State Communications |
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Volume |
76 |
Issue |
4 |
Pages |
493-497 |
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Keywords |
YBCO HTS detectors |
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Abstract |
The ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter to near infrared. With the rise of radiation frequency the Josephson detection at the grain boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. Electron-phonon relaxation time τeph is determined by direct measurements and analyses quasistationary electron heating. Temperature dependence of τeph at T ≤ 40 K was found to be τeph ∼ T−1. The results show that detectors with the response time of few picoseconds at nitrogen temperature are attainable. |
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0038-1098 |
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1685 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Zorin, M. A.; Karasik, B. S.; Trifonov, V. A. |
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Title |
Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation |
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Conference Article |
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1994 |
Publication |
Council on Low-temp. Phys. |
Abbreviated Journal |
Council on Low-temp. Phys. |
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82-83 |
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Keywords |
YBCO HTS HEB |
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Dubna |
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Russian |
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Joint Inst. for Nuclear Research, Dubna (Russian Federation); 296 p; 1994; p. 82-83; 30. Conference on low-temperature physics; 30. Soveshchanie po fizike nizkikh temperatur; Dubna (Russian Federation); 6-8 Sep 1994 |
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Notes |
Неравновесный и болометрический отклик YBaCuO пленок в резиотивном состоянии на инфракрасное лазерное излучение малой интенсивности |
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1632 |
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Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
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Title |
Energy spectrum of free excitons in germanium |
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Journal Article |
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Year |
1973 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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18 |
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3 |
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93 |
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Keywords |
Ge, free excitons, energy spectrum |
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1734 |
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Author |
Gershenzon, E. M.; Goltsman, G. N. |
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Title |
Zeeman effect in excited-states of donors in germanium |
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1972 |
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Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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6 |
Issue |
3 |
Pages |
509 |
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Ge, donors, Zeeman effect |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1737 |
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Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
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Journal Article |
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1982 |
Publication |
Optics and Spectroscopy |
Abbreviated Journal |
Optics and Spectroscopy |
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52 |
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4 |
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454-455 |
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Ge, exciton photoconduction |
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1715 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
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Title |
Investigation of population and ionization of donor excited states in Ge |
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1976 |
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Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
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631-634 |
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Ge, donor excited states |
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Amsterdam |
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North-Holland Publishing Co. |
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1732 |
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Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
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Title |
Investigation of excited donor states in GaAs |
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Journal Article |
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1974 |
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Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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7 |
Issue |
10 |
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1248-1250 |
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GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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