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	Author	Ekström, H.; Karasik, B.; Kollberg, E.; Gol'tsman, G.; Gershenzon, E.
	Title	350 GHz NbN hot electron bolometer mixer			Type	Conference Article
	Year	1995	Publication	Proc. 6^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 6^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	269-283
	Keywords	NbN HEB mixers
	Abstract	Superconducting NbN hot-electron bolometer (HEB) mixer devices have been fabricated and measured at 350 GHz. The HEB is integrated with a double dipole antenna on an extended crystalline quartz hyper hemispherical substrate lens. Heterodyne measurement gave a -3 dB bandwidth, mainly determined by the electron- phonon interaction time, of about 680 and 1000 MHz for two different films with Tc = 8.5 and 11 K respectively. The measured DSB receiver noise temperature is around 3000 K at 800 MHz IF frequency. The main contribution to the output noise from the device is due to electron temperature fluctuations with the equivalent output noise temperature TFL-100 K. TH, has the same frequency dependence as the IF response. The contribution from Johnson noise is of the order of T. The RF coupling loss is estimated to be = 6 dB. The film with lower Tc, had an estimated intrinsic low-frequency conversion loss = 7 dB, while the other film had a conversion loss as high as 14 dB. The difference in intrinsic conversion loss is explained by less uniform absorption of radiation. Measurements of the small signal impedance shows a transition of the output impedance from the DC differential resistance Rd=dV/dI in the low frequency limit to the DC resistance R 0 =Uoff 0 in the bias point for frequencies above 3 GHz. We judge that the optimum shape of the IV-characteristic is more easily obtained at THz frequencies where the main restriction in performance should come from problems with the RF coupling.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1628
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	Author	Ekström, H.; Karasik, B.; Kollberg, E.; Yngvesson, K. S.
	Title	Investigation of a superconducting hot electron mixer			Type	Conference Article
	Year	1994	Publication	Proc. 5^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 5^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	169-188
	Keywords	HEB mixers
	Abstract	Mixing at 20 GHz in niobium superconducting thin film strips in the resistive state is studied. Experiments give evidence that electron-heating is the main cause of the non linear phenomena. The requirements on the mode of operation and on the film parameters for small conversion loss and the possibility of conversion gain are discussed. Measurements indicate a minimum intrinsic conversion loss around 1 dB with a sharp drop for the lowest voltage bias-points, and a DSB mixer noise temperature between 100 and 450 K at 20 GHz. The device output noise temperature at the mixer operating point can be as low as 30-50 K. A simple theory is presented, which is based on the assumption that the small signal resistance is linearly dependent on power. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1642
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	Author	Ekstrom, H.; Karasik, B.; Weikle, R.; Yngvesson, K. S.; Gol’tsman, G.; Kollberg, E.; Gershenzon, E.
	Title	Mixers using superconducting Nb films in the resistive state			Type	Conference Article
	Year	1993	Publication	23rd European Microwave Conf.	Abbreviated Journal	23rd European Microwave Conf.
	Volume		Issue		Pages	787-789
	Keywords	Nb HEB mixers
	Abstract	The mixing of 20 GHz radiation in a Nb superconducting film in the resistive state was studied. The experiment gave evidence of electron-heating to be the origin of the non-linear phenomenon. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are determined. Our measurements indicate a conversion loss of about 6-8 dB. The hot-electron bolometer is considered to be very promising for use in heterodyne receivers in a wide frequency range from microwaves to terahertz frequencies.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1651
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	Author	Ekström, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S.
	Title	Phonon cooled ultra thin NbN hot electron bolometer mixers at 620 GHz			Type	Conference Article
	Year	1997	Publication	Proc. 8^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 8^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	29-35
	Keywords	NbN HEB mixers
	Abstract	We have measured the noise performance and gain bandwidth of 35 A thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. A double-sideband receiver noise temperature less than 1300 K has been obtained with a 3 dB bandwidth of GHz. The gain bandwidth is 3.2 GHz. A lower noise temperature of 1100 K has been achieved with an improved set-up. The mixer output noise dominated by thermal fluctuations is about 50-60 K, and the SSB receiver and intrinsic conversion gain is about -18 and -12 dB, respectively. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1604
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	Author	Ekström, H.; Kroug, M.; Belitsky, V.; Kollberg, E.; Olsson, H.; Goltsman, G.; Gershenzon, E.; Yagoubov, P.; Voronov, B.; Yngvesson, S.
	Title	Hot electron mixers for THz applications			Type	Conference Article
	Year	1996	Publication	Proc. 30th ESLAB	Abbreviated Journal	Proc. 30th ESLAB
	Volume		Issue		Pages	207-210
	Keywords	NbN HEB mixers
	Abstract	We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.
	Address	Noordwijk, Netherlands
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	Rolfe, E. J.; Pilbratt, G.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Submillimetre and Far-Infrared Space Instrumentation
	Notes				Approved	no
	Call Number				Serial	1606
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	Author	Elant'ev, A. I.; Karasik, B. S.
	Title	Effect of high-frequency current on Nb superconductive film in resistive state			Type	Journal Article
	Year	1989	Publication	Sov. J. Low Temp. Phys.	Abbreviated Journal	Sov. J. Low Temp. Phys.
	Volume	15	Issue	7	Pages	379-383
	Keywords	Nb HEB
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	882
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	Author	Elantev, Andrey I.; Karasik, Boris S.
	Title	Noise temperature of a superconducting hot-electron mixer			Type	Conference Article
	Year	1994	Publication	Proc. 5^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 5^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	225
	Keywords	HEB mixers
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1645
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	Author	Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E.
	Title	Amplification of a Raman scattering signal by carbon nanotubes			Type	Journal Article
	Year	2018	Publication	Dokl. Phys.	Abbreviated Journal	Dokl. Phys.
	Volume	63	Issue	12	Pages	496-498
	Keywords	carbon nanotubes, CNT, Raman scattering, RLS
	Abstract	The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1028-3358	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1775
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	Author	Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V.
	Title	Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system			Type	Conference Article
	Year	2017	Publication	EPJ Web of Conferences	Abbreviated Journal	EPJ Web of Conferences
	Volume	132	Issue	2	Pages	2
	Keywords
	Abstract	Recently bright-light control of the SSPD has been demonstrated. This attack employed a â€œbackdoorâ€ in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains â€œlatchedâ€ in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1116
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	Author	Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R.
	Title	Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system			Type	Conference Article
	Year	2017	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	132	Issue		Pages	01004 (1 to 2)
	Keywords	QKD, SSPD, SNSPD
	Abstract	Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched” in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1327
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	Author	Elezov, M. S.; Ozhegov, R. V.; Kurochkin, Y. V.; Goltsman, G. N.; Makarov, V. S.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R.
	Title	Countermeasures against blinding attack on superconducting nanowire detectors for QKD			Type	Conference Article
	Year	2015	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	103	Issue		Pages	10002 (1 to 2)
	Keywords	SSPD, SNSPD, QKD
	Abstract	Nowadays, the superconducting single-photon detectors (SSPDs) are used in Quantum Key Distribution (QKD) instead of single-photon avalanche photodiodes. Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing technique. We developed the autoreset system which returns the SSPD to superconducting state when it is latched. We investigate latched state of the SSPD and define limit conditions for effective blinding attack. Peculiarity of the blinding attack is a long nonsingle photon response of the SSPD. It is much longer than usual single photon response. Besides, we need follow up response duration of the SSPD. These countermeasures allow us to prevent blind attack on SSPDs for Quantum Key Distribution.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1352
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	Author	Elezov, M. S.; Scherbatenko, M. L.; Sych, D. V.; Goltsman, G. N.
	Title	Active and passive phase stabilization for the all-fiber Michelson interferometer			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1124	Issue		Pages	051014 (1 to 5)
	Keywords	Michelson interferometer, phase stabilization
	Abstract	We put forward two methods for phase stabilization in the all-fiber Michelson interferometer. To perform passive phase stabilization, we use a heat bath for all fibers and electro-optical components, and put the interferometer in a hermetic case. To perform active phase stabilization, we monitor output power of the interferometer and develop an electronic feedback control. The phase stabilization methods enable stable interference pattern for several minutes, and can be helpful for the development of the optimal quantum receiver for coherent signals.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1299
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	Author	Elezov, M. S.; Semenov, A. V.; An, P. P.; Tarkhov, M. A.; Goltsman, G. N.; Kardakova, A. I.; Kazakov, A. Y.
	Title	Investigating the detection regimes of a superconducting single-photon detector			Type	Journal Article
	Year	2013	Publication	J. Opt. Technol.	Abbreviated Journal	J. Opt. Technol.
	Volume	80	Issue	7	Pages	435
	Keywords	SSPD, quantum efficiency
	Abstract	The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1070-9762	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1172
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	Author	Elezov, M. S.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N.
	Title	Development of control method for an optimal quantum receiver			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012126
	Keywords	Helstrom bound, SPD, single photon detector, below quantum limit
	Abstract	We propose a method for optimal displacement controlling of an optimal quantum receiver for registrations a binary coherent signal. An optimal receiver is able to distinguish between two phase-modulated states of a coherent signal. The optimal receiver controlling method can be used later in practice in various physical implementations of the optimal receiver.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1264
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	Author	Elezov, M.; Ozhegov, R.; Goltsman, G.; Makarov, V.
	Title	Countermeasure against bright-light attack on superconducting nanowire single-photon detector in quantum key distribution			Type	Journal Article
	Year	2019	Publication	Opt. Express	Abbreviated Journal	Opt. Express
	Volume	27	Issue	21	Pages	30979-30988
	Keywords	SSPD, SNSPD
	Abstract	We present an active anti-latching system for superconducting nanowire single-photon detectors. We experimentally test it against a bright-light attack, previously used to compromise security of quantum key distribution. Although our system detects continuous blinding, the detector is shown to be partially blindable and controllable by specially tailored sequences of bright pulses. Improvements to the countermeasure are suggested.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1094-4087	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:31684339			Approved	no
	Call Number				Serial	1275
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	Author	Elezov, M.; Scherbatenko, M.; Sych, D.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A.
	Title	Towards the fiber-optic Kennedy quantum receiver			Type	Conference Article
	Year	2019	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	220	Issue		Pages	03011 (1 to 2)
	Keywords	SSPD, SNSPD, Kennedy quantum receiver
	Abstract	We consider practical aspects of using standard fiber-optic elements and superconducting nanowire single-photon detectors for the development of a practical quantum receiver based on the Kennedy scheme. Our receiver allows to discriminate two phase-modulated coherent states of light at a wavelength of 1.5 microns in continuous mode with bit rate 200 Kbit/s and error rate about two times below the standard quantum limit.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1288
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	Author	Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A.
	Title	Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform			Type	Conference Article
	Year	2019	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	220	Issue		Pages	03012
	Keywords	e-beam lithography, Si3N4
	Abstract	In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1189
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	Author	Elmanov, I.; Sardi, F.; Xia, K.; Kornher, T.; Kovalyuk, V.; Prokhodtsov, A.; An, P.; Kuzin, A.; Elmanova, A.; Goltsman, G.; Kolesov, R.
	Title	Development of focusing grating couplers for lithium niobate on insulator platform			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012127
	Keywords	grating couplers, lithium niobat
	Abstract	In this paper, we fabricate and experimentally study focusing grating couplers for lithium niobate on an insulator photonic platform. The transmittance of a waveguide equipped with in- and out-couplers with respect to the grating period is measured with and without silicon dioxide cladding applied. Our results show the influence of silicon dioxide cladding on the efficiency and the central wavelength of grating couplers and can be used to improve grating coupling efficiency. Our study is supported by numerical simulations.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1180
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	Author	Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory
	Title	Integrated contra-directional coupler for NV-centers photon filtering			Type	Conference Article
	Year	2020	Publication	Proc. 32-nd EMSS	Abbreviated Journal	Proc. 32-nd EMSS
	Volume		Issue		Pages	354-360
	Keywords	NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings
	Abstract	We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2724-0029	ISBN	978-88-85741-44-7	Medium
	Area		Expedition		Conference	32nd European Modeling & Simulation Symposium
	Notes				Approved	no
	Call Number				Serial	1839
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	Author	Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory
	Title	Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds			Type	Conference Article
	Year	2020	Publication	Proc. 32-nd EMSS	Abbreviated Journal	Proc. 32-nd EMSS
	Volume		Issue		Pages	344-348
	Keywords
	Abstract	The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength.
	Address	NV-centers, nanodiamonds
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2724-0029	ISBN	978-88-85741-44-7	Medium
	Area		Expedition		Conference	32nd European Modeling & Simulation Symposium
	Notes				Approved	no
	Call Number				Serial	1840
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	Author	Elmanova, A.; An, P.; Kovalyuk, V.; Golikov, A.; Elmanov, I.; Goltsman, G.
	Title	Study of silicon nitride O-ring resonator for gas-sensing applications			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012124
	Keywords	silicon nitride O-ring resonator, ORR
	Abstract	In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1176
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	Author	Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A.
	Title	Integration of nanodiamonds with NV-centers on optical silicon nitride structures			Type	Conference Article
	Year	2019	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	220	Issue		Pages	03013
	Keywords	nanodiamonds, NV-centers, Si3N4
	Abstract	In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1190
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	Author	Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A.
	Title	Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm			Type	Journal Article
	Year	2010	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	97	Issue	13	Pages	131907 (1 to 3)
	Keywords	SSPD, SNSPD, InAsP/InP quantum dots
	Abstract	By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1238
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	Author	Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I.
	Title	Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation			Type	Journal Article
	Year	2021	Publication	Adv. Electron. Mater.	Abbreviated Journal	Adv. Electron. Mater.
	Volume	7	Issue	3	Pages	2000872
	Keywords	SWCNT transistors
	Abstract	The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2199-160X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1843
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	Author	Feautrier, P.; le Coarer, E.; Espiau de Lamaestre, R.; Cavalier, P.; Maingault, L.; Villégier, J-C.; Frey, L.; Claudon, J.; Bergeard, N.; Tarkhov, M.; Poizat, J-P.
	Title	High-speed superconducting single photon detectors for innovative astronomical applications			Type	Conference Article
	Year	2008	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	97	Issue	1	Pages	10
	Keywords	SSPD
	Abstract	Superconducting Single Photon Detectors (SSPD) are now mature enough to provide extremely interesting detector performances in term of sensitivity, speed, and geometry in the visible and near infrared wavelengths. Taking advantage of recent results obtained in the Sinphonia project, the goal of our research is to demonstrate the feasibility of a new family of micro-spectrometers, called SWIFTS (Stationary Wave Integrated Fourier Transform Spectrometer), associated to an array of SSPD, the whole assembly being integrated on a monolithic sapphire substrate coupling the detectors array to a waveguide injecting the light. This unique association will create a major breakthrough in the domain of visible and infrared spectroscopy for all applications where the space and weight of the instrument is limited. SWIFTS is an innovative way to achieve very compact spectro-detectors using nano-detectors coupled to evanescent field of dielectric integrated optics. The system is sensitive to the interferogram inside the dielectric waveguide along the propagation path. Astronomical instruments will be the first application of such SSPD spectrometers. In this paper, we describes in details the fabrication process of our SSPD built at CEA/DRFMC using ultra-thin NbN epitaxial films deposited on different orientations of Sapphire substrates having state of the art superconducting characteristics. Electron beam lithography is routinely used for patterning the devices having line widths below 200 nm and down to 70 nm. An experimental set-up has been built and used to test these SSPD devices and evaluate their photon counting performances. Photon counting performances of our devices have been demonstrated with extremely low dark counts giving excellent signal to noise ratios. The extreme compactness of this concept is interesting for space spectroscopic applications. Some new astronomical applications of such concept are proposed in this paper.
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	Notes				Approved	no
	Call Number	RPLAB @ gujma @			Serial	648
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	Author	Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R.
	Title	Response of graphene based gated nanodevices exposed to THz radiation			Type	Conference Article
	Year	2015	Publication	EPJ Web of Conferences	Abbreviated Journal	EPJ Web of Conferences
	Volume	103	Issue		Pages	10003 (1 to 2)
	Keywords	graphene field-effect transistor, FET
	Abstract	In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1350
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	Author	Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N.
	Title	Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection			Type	Journal Article
	Year	2016	Publication	Semicond.	Abbreviated Journal	Semicond.
	Volume	50	Issue	12	Pages	1600-1603
	Keywords	carbon nanotubes, CNT detectors
	Abstract	Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7826	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1776
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	Author	Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G.
	Title	Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors			Type	Journal Article
	Year	2018	Publication	Phys. Status Solidi B	Abbreviated Journal	Phys. Status Solidi B
	Volume	255	Issue	1	Pages	1700227 (1 to 6)
	Keywords	carbon nanotube schottky diodes, CNT
	Abstract	Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0370-1972	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1321
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	Author	Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G.
	Title	Graphene-based lateral Schottky diodes for detecting terahertz radiation			Type	Conference Article
	Year	2018	Publication	Proc. Optical Sensing and Detection V	Abbreviated Journal	Proc. Optical Sensing and Detection V
	Volume	10680	Issue		Pages	30-39
	Keywords	graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves
	Abstract	Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
	Address
	Corporate Author				Thesis
	Publisher	Spie	Place of Publication		Editor	Berghmans, F.; Mignani, A.G.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	10.1117/12.2307020			Serial	1306
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	Author	Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G.
	Title	Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation			Type	Journal Article
	Year	2013	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	103	Issue	18	Pages	181121 (1 to 5)
	Keywords	carbon nanotubes, CNT, THz radiation, SiO2 substrate
	Abstract	We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1171
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	Author	Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G.
	Title	Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation			Type	Abstract
	Year	2014	Publication	Proc. 25^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 25^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	71
	Keywords	carbon nanotubes, CNT
	Abstract	This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented.
	Address
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	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
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	Notes				Approved	no
	Call Number				Serial	1361
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	Author	Ferrari, S.; Kahl, O.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P.
	Title	Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires			Type	Journal Article
	Year	2015	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	106	Issue	15	Pages	151101 (1 to 5)
	Keywords	SSPD, SNSPD
	Abstract	We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents. W. H. P. Pernice acknowledges support by the DFG Grant Nos. PE 1832/1-1 and PE 1832/1-2 and the Helmholtz society through Grant No. HIRG-0005. The Ph.D. education of O. Kahl is embedded in the Karlsruhe School of Optics and Photonics (KSOP). G. N. Goltsman acknowledges support by Russian Federation President Grant HШ-1918.2014.2 and Ministry of Education and Science of the Russian Federation Contract No.: RFMEFI58614X0007. A. Korneev acknowledges support by Statement Task No. 3.1846.2014/k. V. Kovalyuk acknowledges support by Statement Task No. 2327. We also acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) and the State of Baden-Württemberg through the DFG-Center for Functional Nanostructures (CFN) within subproject A6.4. We thank S. Kühn and S. Diewald for the help with device fabrication as well as B. Voronov and A. Shishkin for help with NbN thin film deposition and A. Semenov for helpful discussion about the detection mechanism of nanowire SSPD's. The authors declare no competing financial interests.
	Address
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	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1211
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	Author	Ferrari, S.; Kovalyuk, V.; Hartmann, W.; Vetter, A.; Kahl, O.; Lee, C.; Korneev, A.; Rockstuhl, C.; Gol'tsman, G.; Pernice, W.
	Title	Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors			Type	Journal Article
	Year	2017	Publication	Opt. Express	Abbreviated Journal	Opt. Express
	Volume	25	Issue	8	Pages	8739-8750
	Keywords	SSPD, SNSPD, photon counting; Infrared; Quantum detectors; Integrated optics; Multiphoton processes; Photon statistics
	Abstract	We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions.
	Address
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	Language		Summary Language		Original Title
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	Notes				Approved	no
	Call Number	RPLAB @ kovalyuk @			Serial	1118
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	Author	Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lee, C.; Rockstuhl, C.; Semenov, A.; Gol'tsman, G.; Pernice, W.
	Title	Analysis of the detection response of waveguide-integrated superconducting nanowire single-photon detectors at high count rate			Type	Journal Article
	Year	2019	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	115	Issue	10	Pages	101104
	Keywords	SSPD, SNSPD, waveguide
	Abstract	Nanophotonic circuitry and superconducting nanowires have been successfully combined for detecting single photons, propagating in an integrated photonic circuit, with high efficiency and low noise and timing uncertainty. Waveguide-integrated superconducting nanowire single-photon detectors (SNSPDs) can nowadays be engineered to achieve subnanosecond recovery times and can potentially be adopted for applications requiring Gcps count rates. However, particular attention shall be paid to such an extreme count rate regime since artifacts in the detector functionality emerge. In particular, a count-rate dependent detection efficiency has been encountered that can compromise the accuracy of quantum detector tomography experiments. Here, we investigate the response of waveguide-integrated SNSPDs at high photon flux and identify the presence of parasitic currents due to the accumulation of charge in the readout electronics to cause the above-mentioned artifact in the detection efficiency. Our approach allows us to determine the maximum photon count rate at which the detector can be operated without adverse effects. Our findings are particularly important to avoid artifacts when applying SNSPDs for quantum tomography. We acknowledge support through ERC Consolidator Grant No. 724707 and from the Deutsche Forschungsgemeinschaft through Project No. PE 1832/5-1,2, as well as funding by the Volkswagen Foundation. This project has received funding from the European Union's Horizon 2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreement No. 675745. V.K. and G.G. acknowledge support from the Russian Science Foundation Project No. 16-12-00045 (NbN film deposition and testing). A.V. acknowledges support from the Karlsruhe School of Optics and Photonics (KSOP).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1185
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	Author	Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Yu. P.; Kaurova, N. S.; Voronov, B. M.; Gol'tsman, G. N.
	Title	Hot electron bolometer mixer for 20 – 40 THz frequency range			Type	Conference Article
	Year	2005	Publication	Proc. 16^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 16^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	393-397
	Keywords	IR NbN HEB mixers
	Abstract	The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Göteborg, Sweden	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	369
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	Author	Finkel, M. I.; Maslennikov, S. N.; Gol'tsman, G. N.
	Title	The concept of the receiving complex for the “Millimetron” space radio telescope			Type	Journal Article
	Year	2007	Publication	Radiophys. Quant. Electron.	Abbreviated Journal	Radiophys. Quant. Electron.
	Volume	50	Issue	10-11	Pages	837-846
	Keywords	HEB, applications, Millimetron, VLBI
	Abstract	We consider the current status of research in the development of a submillimeter and far-infrared receiving instrument and propose promising solutions for the receivers of the spaceborne telescope “Millimetron,” which allow one to realize comprehensively the opportunities given by this international project administrated by the Astrospace Center of the P. N. Lebedev Physical Institute of the Russian Academy of Sciences.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0033-8443	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	411
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	Author	Finkel, M. I.; Maslennikov, S. N.; Gol'tsman, G. N.
	Title	Terahertz heterodyne receivers based on superconductive hot-electron bolometer mixers			Type	Journal Article
	Year	2005	Publication	Radiophys. Quant. Electron.	Abbreviated Journal	Radiophys. Quant. Electron.
	Volume	48	Issue	10-11	Pages	859-864
	Keywords	HEB, applications
	Abstract	We consider recent results in development of hot-electron bolometer mixers. Special attention is paid to optimization of the contacts between the antenna and the active area of a superconducting film. An important result in the study of the parasitic effect of direct detection is obtained during the measurement of the noise temperatures by the hot/cold load method. The latest results of studies of the waveguide hot-electron bolometer mixers and their successful practical applications are considered. Progress in development of high-frequency (over 1.3 THz) heterodyne receivers for several important international projects is discussed and new submillimeter radio astronomy projects ESPRIT and SAFIR are described.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0033-8443	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	381
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	Author	Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M.
	Title	Performance of THz components based on microstrip PECVD SiN_x technology			Type	Journal Article
	Year	2017	Publication	IEEE Trans. THz Sci. Technol.	Abbreviated Journal	IEEE Trans. THz Sci. Technol.
	Volume	7	Issue	6	Pages	765-771
	Keywords	transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices
	Abstract	We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2156-342X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1294
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	Author	Finkel, Matvey; Vachtomin, Yuriy; Antipov, Sereey; Drakinski, Vladimir; Kaurova, Natalia; Voronov, Boris; Goltsman, Greeory
	Title	Gain bandwidth and noise temperature of NbTiN HEB mixer			Type	Conference Article
	Year	2003	Publication	Proc. 14^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 14^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	276-285
	Keywords	NbTiN HEB mixer
	Abstract	We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1500
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	Author	Fiore, A.; Marsili, F.; Bitauld, D.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G.
	Title	Counting photons using a nanonetwork of superconducting wires			Type	Conference Article
	Year	2009	Publication	Nano-Net	Abbreviated Journal
	Volume		Issue		Pages	120-122
	Keywords	SSPD, SNSPD
	Abstract	We show how the parallel connection of photo-sensitive superconducting nanowires can be used to count the number of photons in an optical pulse, down to the single-photon level. Using this principle we demonstrate photon-number resolving detectors with unprecedented sensitivity and speed at telecommunication wavelengths.
	Address
	Corporate Author				Thesis
	Publisher	Springer Berlin Heidelberg	Place of Publication	Berlin, Heidelberg	Editor	Cheng, M.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	978-3-642-02427-6	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	10.1007/978-3-642-02427-6_20			Serial	1242
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	Author	Florya, I. N.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Korneev, A. A.; Goltsman, G. N.
	Title	Photon counting statistics of superconducting single-photon detectors made of a three-layer WSi film			Type	Journal Article
	Year	2018	Publication	Low Temp. Phys.	Abbreviated Journal	Low Temp. Phys.
	Volume	44	Issue	3	Pages	221-225
	Keywords	WSi SSPD, SNSPD
	Abstract	Superconducting nanowire single-photon detectors (SNSPD) are used in quantum optics when record-breaking time resolution, high speed, and exceptionally low levels of dark counts (false readings) are required. Their detection efficiency is limited, however, by the absorption coefficient of the ultrathin superconducting film for the detected radiation. One possible way of increasing the detector absorption without limiting its broadband response is to make a detector in the form of several vertically stacked layers and connect them in parallel. For the first time we have studied single-photon detection in a multilayer structure consisting of three superconducting layers of amorphous tungsten silicide (WSi) separated by thin layers of amorphous silicon. Two operating modes of the detector are illustrated: an avalanche regime and an arm-trigger regime. A shift in these modes occurs at currents of ∼0.5–0.6 times the critical current of the detector. This work was supported by technical task No. 88 for scientific research at the National Research University “Higher School of Economics,” Grant No. 14.V25.31.0007 from the Ministry of Education and Science of Russia, and the work of G. N. Goltsman was supported by task No. 3.7328.2017/VU of the Ministry of Education and Science of Russia.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-777X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1310
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	Author	Florya, I. N.; Korneeva, Y. P.; Sidorova, M. V.; Golikov, A. D.; Gaiduchenko, I. A.; Fedorov, G. E.; Korneev, A. A.; Voronov, B. M.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R.
	Title	Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs			Type	Conference Article
	Year	2015	Publication	EPJ Web of Conferences	Abbreviated Journal	EPJ Web of Conferences
	Volume	103	Issue		Pages	10004 (1 to 2)
	Keywords	SSPD, SNSPD
	Abstract	We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1351
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	Author	Galin, M. A.; Klushin, A. M.; Kurin, V. V.; Seliverstov, S. V.; Finkel, M. I.; Goltsman, G. N.; Müller, F.; Scheller, T.; Semenov, A. D.
	Title	Towards local oscillators based on arrays of niobium Josephson junctions			Type	Journal Article
	Year	2015	Publication	Supercond. Sci. Technol.	Abbreviated Journal	Supercond. Sci. Technol.
	Volume	28	Issue	5	Pages	055002 (1 to 7)
	Keywords	Josephson junction local oscillators, JJ LO
	Abstract	Various applications in the field of terahertz technology are in urgent need of compact, wide-tunable solid-state continuous wave radiation sources with a moderate power. However, satisfactory solutions for the THz frequency range are scarce yet. Here we report on coherent radiation from a large planar array of Josephson junctions (JJs) in the frequency range between 0.1 and 0.3 THz. The external resonator providing the synchronization of JJ array is identified as a straight fragment of a single-strip-line containing the junctions themselves. We demonstrate a prototype of the quasioptical heterodyne receiver with the JJ array as a local oscillator and a hot-electron bolometer mixer.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-2048	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1347
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	Author	Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G.
	Title	NbN hot electron bolometer mixers with superior performance for space applications			Type	Conference Article
	Year	2004	Publication	Proc. Int. workshop on low temp. electronics	Abbreviated Journal	Proc. Int. workshop on low temp. electronics
	Volume		Issue		Pages	11-17
	Keywords	NbN HEB mixers, applications
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Noordwijk	Editor	Armandillo, E.; Leone, B.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	International workshop on low temperature electronics- WOLTE 6 - Noordwijk
	Notes				Approved	no
	Call Number				Serial	1496
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	Author	Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Yang, Z. Q.; Baryshev, A. M.; Barends, R.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G.; Callaos, N.
	Title	Twin-slot antenna coupled NbN hot electron bolometer mixers for space applications			Type	Conference Article
	Year	2005	Publication	Proc. 9-th WMSCI	Abbreviated Journal	Proc. 9-th WMSCI
	Volume	9	Issue		Pages	148-153
	Keywords	NbN HEB mixers
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	International Institute of Informatics and Systemics	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	9806560639, 9789806560635	Medium
	Area		Expedition		Conference	9th World Multi-Conference on Systemics, Cybernetics and Informatics
	Notes				Approved	no
	Call Number				Serial	1480
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	Author	Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M.
	Title	Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate			Type	Journal Article
	Year	2007	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	91	Issue	6	Pages	062504 (1 to 3)
	Keywords	NbN films, nanofilms
	Abstract	The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM. The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1425
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	Author	Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A.
	Title	Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers?			Type	Conference Article
	Year	2006	Publication	Proc. 17^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 17^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	187-189
	Keywords	NbN HEB mixers
	Abstract	We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1439
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	Author	Gao, J.R.; Hiajenius, M.; Yang, Z.Q.; Klapwijk, T.M.; Miao, W.; Shi, S. C.; Voronov, B.; Gortsman, G.
	Title	Direct comparison of the sensitivity of a spiral and a twin-slot antenna coupled HEB mixer at 1.6 THz			Type	Conference Article
	Year	2006	Publication	Proc. 17^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 17^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	59-62
	Keywords	NbN HEB mixers
	Abstract	To make a direct comparison of the sensitivity between a spiral and a twin slot antenna coupled HEB mixer, we designed both types of mixers and fabricated them in a single processing run and on the same wafer. Both mixers have similar dimensions of NbN bridges (1.5-2 pm x0.2 pm). At 1.6 THz we obtained a nearly identical receiver noise temperature from both mixers (only 5% difference), which is in a good agreement with the simulation based on semi analytical models for both antennas. In addition, by using a bandpass filter to reduce the direct detection effect and lowering the bath temperature to 2.4 K, we measured the lowest receiver noise temperature of 700 K at 1.63 THz using the twin-slot antenna mixer.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1436
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	Author	Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I.
	Title	Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices			Type	Journal Article
	Year	2018	Publication	Nanotechnol.	Abbreviated Journal	Nanotechnol.
	Volume	29	Issue	24	Pages	245204 (1 to 8)
	Keywords	single layer graphene, graphene nanoribbons
	Abstract	We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.
	Address	Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0957-4484	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:29553479			Approved	no
	Call Number				Serial	1308
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	Author	Gayduchenko, I. A.; Fedorov, G. E.; Stepanova, T. S.; Titova, N.; Voronov, B. M.; But, D.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.
	Title	Asymmetric devices based on carbon nanotubes as detectors of sub-THz radiation			Type	Conference Article
	Year	2016	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	741	Issue		Pages	012143 (1 to 6)
	Keywords	carbon nanotubes, CNT
	Abstract	Demand for efficient terahertz (THz) radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. In this work, we systematically investigate the response of asymmetric carbon nanodevices to sub-terahertz radiation using different sensing elements: from dense carbon nanotube (CNT) network to individual CNT. We conclude that the detectors based on individual CNTs both semiconducting and quasi-metallic demonstrate much stronger response in sub-THz region than detectors based on disordered CNT networks at room temperature. We also demonstrate the possibility of using asymmetric detectors based on CNT for imaging in the THz range at room temperature. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1336
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	Author	Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E.
	Title	The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts			Type	Conference Article
	Year	2018	Publication	Materials Today: Proc.	Abbreviated Journal	Materials Today: Proc.
	Volume	5	Issue	13	Pages	27301-27306
	Keywords	graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor
	Abstract	We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2214-7853	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1316
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	Author	Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G.
	Title	Towards to the development of THz detectors based on carbon nanostructures			Type	Conference Article
	Year	2018	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1092	Issue		Pages	012039 (1 to 4)
	Keywords	CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors
	Abstract	Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1302
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	Author	Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G.
	Title	Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation			Type	Journal Article
	Year	2015	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
	Volume	118	Issue	19	Pages	194303
	Keywords	terahertz detectors, asymmetric carbon nanotubes, CNT
	Abstract	Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1169
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	Author	Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A.
	Title	Tunnel field-effect transistors for sensitive terahertz detection			Type	Journal Article
	Year	2021	Publication	Nat. Commun.	Abbreviated Journal	Nat. Commun.
	Volume	12	Issue	1	Pages	543
	Keywords	field-effect transistors, bilayer graphene, BLG
	Abstract	The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
	Address	Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2041-1723	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:33483488; PMCID:PMC7822863			Approved	no
	Call Number				Serial	1261
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	Author	Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M.
	Title	Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz			Type	Conference Article
	Year	1998	Publication	Proc. 9^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 9^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	105-114
	Keywords	NbN HEB mixers
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1587
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	Author	Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
	Title	New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz			Type	Journal Article
	Year	1999	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	9	Issue	2	Pages	4217-4220
	Keywords	NbN HEB mixers
	Abstract	NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1568
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	Author	Gerecht, E.; Musante, C. F.; Jian, H.; Zhuang, Y.; Yngvesson, K. S.; Dickinson, J.; Goyette, T.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
	Title	Improved characteristics of NbN HEB mixers integrated with log-periodic antennas			Type	Conference Article
	Year	1999	Publication	Proc. 10^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 10^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	200-207
	Keywords	NbN HEB mixers
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1574
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	Author	Gerecht, E.; Musante, C. F.; Schuch, R.; Lutz, C. R.; Jr.; Yngvesson, K. S.; Mueller, E. R.; Waldivian, J.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
	Title	Hot electron detection and mixing experiments in NbN at 119 micrometer wavelength			Type	Conference Article
	Year	1995	Publication	Proc. 6^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 6^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	284-293
	Keywords	NbN HEB mixers, detectors
	Abstract	We have performed preliminary experiments with the goal of demonstrating a Hot Electron Bolometric (HEB) mixer for a 119 micrometer wavelength (2.5 THz). We have chosen a NbN device of size 700 x 350 micrometers. This device can easily be coupled to a laser LO source, which is advantageous for performing a prototype experiment. The relatively large size of the device means that the LO power required is in the mW range; this power can be easily obtained from a THz laser source. We have measured the amount of laser power actually absorbed in the device, and from this have estimated the best optical coupling loss to be about 10 di . We are developing methods for improving the optical coupling further. Preliminary measurements of the response of the device to a chopped black-body have not yet resulted in a measured receiver noise temperature. We expect to be able to complete this measurement in the near future.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1629
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	Author	Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Mueller, E. R.; Waldman, J.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenco, S. I.; Svechnikov, S. I.; Yagoubov, P. A.; Gershenzon, E. M.
	Title	Optimization of hot eleciron bolometer mixing efficiency in NbN at 119 micrometer wavelength			Type	Conference Article
	Year	1996	Publication	Proc. 7^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 7^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	584-600
	Keywords	NbN HEB mixers
	Abstract	We describe an investigation of a NbN HEB mixer for 2.5 THz. An intrinsic conversion loss of 23 dB has been measured with a two-laser measurement technique. The conversion loss was limited by the LO power available and is expected to decrease to 10 dB or less when sufficient LO power is available. For this initial experiment we used a prototype device which is directly coupled to the laser beams. We present results for a back-short technique that improves the optical coupling to the device and describe our progress for an antenna-coupled device with a smaller dimension. Based on our measured data for conversion loss and device output noise level, we predict that NbN HEB mixers will be capable of achieving DSB receiver noise temperatures of ten times the quantum noise limit in the THz range.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1616
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	Author	Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Svechnikov, S. I.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.
	Title	NbN hot electron bolometric mixer for 2.5 THz: the phonon cooled version			Type	Conference Article
	Year	1997	Publication	Proc. 8^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 8^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	258-271
	Keywords	NbN HEB mixers
	Abstract	We describe an investigation of a NbN HEB mixer for 2.5 THz. NbN HEBs are phonon-cooled de-. vices which are expected, according to theory, to achieve up to 10 GHz IF conversion gain bandwidth. We have developed an antenna coupled device using a log-periodic antenna and a silicon lens. We have demon- strated that sufficient LO power can be coupled to the device in order to bring it to the optimum mixer oper- ating point. The LO power required is less than 1 microwatts as measured directly at the device. We also describe the impedance characteristics of NbN devices and compare them with theory. The experimental results agree with theory except for the imaginary part of the impedance at very low frequencies as was demonstrated by other groups.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1605
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	Author	Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M.
	Title	Optical coupling and conversion gain for NbN HEB mixer at THz frequencies			Type	Conference Article
	Year	1997	Publication	Proc. 4-th Int. Semicond. Device Research Symp.	Abbreviated Journal	Proc. 4-th Int. Semicond. Device Research Symp.
	Volume		Issue		Pages	47-50
	Keywords	NbN HEB mixers
	Abstract
	Address	Charlottesville, Virginia
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1601
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	Author	Gerecht, E.; Musante, C. F.; Zhuang, Y.; Yngvesson, K. S.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
	Title	NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers			Type	Journal Article
	Year	1999	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	47	Issue	12	Pages	2519-2527
	Keywords	NbN HEB mixers
	Abstract	New advances in hot electron bolometer (HEB) mixers have recently resulted in record-low receiver noise temperatures at terahertz frequencies. We have developed quasi-optically coupled NbN HEB mixers and measured noise temperatures up to 2.24 THz, as described in this paper. We project the anticipated future performance of such receivers to have even lower noise temperature and local-oscillator power requirement as well as wider gain and noise bandwidths. We introduce a proposal for integrated focal plane arrays of HEB mixers that will further increase the detection speed of terahertz systems.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1557-9670	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1560
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	Author	Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors			Type	Journal Article
	Year	1983	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
	Volume	17	Issue	8	Pages	908-913
	Keywords	BWO spectroscopy, pure semiconductors, residual impurities
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках			Approved	no
	Call Number				Serial	1714
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	Author	Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V.
	Title	Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures			Type	Journal Article
	Year	2001	Publication	Appl. Phys. Lett.	Abbreviated Journal
	Volume	79	Issue		Pages	2049-2051
	Keywords	HEB detector, FIR, far infrared
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ s @ heb_eph_interaction_Gershenzon			Serial	315
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	Author	Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V.
	Title	Electron-phonon interaction in ultrathin Nb films			Type	Journal Article
	Year	1990	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	70	Issue	3	Pages	505-511
	Keywords	Nb films
	Abstract	A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms. 1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	241
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	Author	Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Wide-band highspeed Nb and YBaCuO detectors			Type	Journal Article
	Year	1991	Publication	IEEE Trans. Magn.	Abbreviated Journal	IEEE Trans. Magn.
	Volume	27	Issue	2	Pages	2836-2839
	Keywords	YBCO, HTS, Nb detectors
	Abstract	The physical limitations on the response time and the nature of nonequilibrium detection of radiation were investigated for Nb and YBCO film in a wide spectral range from millimeter to near-infrared wavelengths. In the case of ideal heat removal from the film, the detection mechanism is connected with an electron heating effect which is not selective over a wide spectral interval. For Nb, the dependence of the response time on the electron mean free path l and temperature T is tau varies as T/sup -2/l/sup -1/. The values of detectivity D* and tau are 310/sup 11/ W/sup -1/ Hz/sup 1/2/ cm and 510/sup -9/ s at T=1.6 K, respectively. For YBCO film the tau value of 1-2 ps at T=77 K was obtained; the NEP value of 3*10/sup -11/ W-Hz/sup -1/2/ can be obtained at T=77 K in the case of the optimal film matching to the radiation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0018-9464	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	239
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E.
	Title	Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state			Type	Journal Article
	Year	1988	Publication	Sov. J. Low Temp. Phys.	Abbreviated Journal	Sov. J. Low Temp. Phys.
	Volume	14	Issue	7	Pages	414-420
	Keywords	HEB
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Duplicated as 1697			Approved	no
	Call Number				Serial	236
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D.
	Title	Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state			Type	Journal Article
	Year	1990	Publication	Sov. Supercond.	Abbreviated Journal	Sov. Supercond.
	Volume	3	Issue	10	Pages	1582-1597
	Keywords	HEB mixers
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	240
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	Author	Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Limiting characteristic of fast superconducting bolometers			Type	Journal Article
	Year	1989	Publication	Sov. Phys.-Tech. Phys.	Abbreviated Journal	Sov. Phys.-Tech. Phys.
	Volume	34	Issue		Pages	195-199
	Keywords	HEB
	Abstract	Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	О предельных характеристиках быстродействующих серхпроводниковых болометров			Approved	no
	Call Number				Serial	237
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	Author	Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D.
	Title	Fast-response superconducting electron bolometer			Type	Journal Article
	Year	1989	Publication	Pisma v Zhurnal Tekhnicheskoi Fiziki	Abbreviated Journal	Pisma v Zhurnal Tekhnicheskoi Fiziki
	Volume	15	Issue	3	Pages	88-92
	Keywords	Nb HEB
	Abstract	The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1694
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	Author	Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V.
	Title	Limiting characteristics of fast-response superconducting bolometers			Type	Journal Article
	Year	1989	Publication	Zhurnal Tekhnicheskoi Fiziki	Abbreviated Journal	Zhurnal Tekhnicheskoi Fiziki
	Volume	59	Issue	2	Pages	11-120
	Keywords	HEB
	Abstract	Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1696
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	Author	Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V.
	Title	Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound			Type	Journal Article
	Year	1987	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	46	Issue	6	Pages	285-287
	Keywords	YBCO HTS HEB
	Abstract	For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1706
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	Author	Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Heating of electrons in a superconductor in the resistive state by electromagnetic radiation			Type	Journal Article
	Year	1984	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	59	Issue	2	Pages	442-450
	Keywords	Nb HEB
	Abstract	The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ phisix @			Serial	983
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	Author	Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state			Type	Journal Article
	Year	1982	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	36	Issue	7	Pages	296-299
	Keywords	HEB
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии			Approved	no
	Call Number				Serial	1717
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	Author	Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semyonov, A. D.; Sergeev, A. V.
	Title	Heating of electrons in superconductor in the resistive state due to electromagnetic radiation			Type	Journal Article
	Year	1984	Publication	Solid State Communications	Abbreviated Journal	Solid State Communications
	Volume	50	Issue	3	Pages	207-212
	Keywords	Nb HEB
	Abstract	The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0038-1098	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1709
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	Author	Gershenzon, E. M.; Gogidze, I. G.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Picosecond response on optical-range emission in thin YBaCuO films			Type	Journal Article
	Year	1991	Publication	Pisma v Zhurnal Tekhnicheskoi Fiziki	Abbreviated Journal	Pisma v Zhurnal Tekhnicheskoi Fiziki
	Volume	17	Issue	22	Pages	6-10
	Keywords	YBCO HTS detectors
	Abstract	Целью настоящей работы является целенаправленный поиск пико-секундного отклика на оптическое излучение выяснение оптимальных условий его наблюдения, а также сравнение характеристик неравновесных эффектов в оптическом и субмиллиметровом диапазонах.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1684
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.
	Title	Hot-electron superconducting mixers			Type	Conference Article
	Year	1993	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	2104	Issue		Pages	329-330
	Keywords
	Abstract	The creation of low noise heterodyne receivers for frequencies above 1 THz is in the urgentneed for radio astronomy, laser spectroscopy, plasma diagnostic, etc. In this paper we discussthe nonlinear effect related to hot electrons in superconductors, and their potential use in lownoise submilimeter wave mixer. We also discuss results achieved so far as well as possible futuredevelopments.
	Address
	Corporate Author				Thesis
	Publisher	SPIE	Place of Publication		Editor	Birch, J.R.; Parker, T.J.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	18th International Conference on Infrared and Millimeter Waves
	Notes				Approved	no
	Call Number				Serial	1654
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.
	Title	Hot electron superconductive mixers			Type	Conference Article
	Year	1993	Publication	Proc. 4^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 4^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	618-622
	Keywords	HEB mixers
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1656
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.
	Title	Effect of electromagnetic radiation on a superconductor in a magnetic field			Type	Conference Article
	Year	1988	Publication	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya	Abbreviated Journal	Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
	Volume	52	Issue	3	Pages	449-451
	Keywords
	Abstract	The effect of electromagnetic radiation on thin superconducting films of Nb with a large number of static defects is investigated experimentally for the case where the film is in the resistive state due to an applied magnetic field and transport current. The results obtained are found to be well described by a model of spatially homogeneous electron heating. It is noted that the results obtained here for Nb films are also valid for Al, NbN, and MoRe films.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0367-6765	ISBN		Medium
	Area		Expedition		Conference	4th Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Tallin, Estonian SSR, Apr. 1987
	Notes				Approved	no
	Call Number				Serial	1702
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.
	Title	Transitions of electrons between excited states of donors in germanium			Type	Journal Article
	Year	1971	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	14	Issue	2	Pages	63-65
	Keywords	Ge, donors, excited states
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1740
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Dzardanov, A. L.; Elant'ev, A. I.; Zorin, M. A.; Markin, A. G.; Semenov, A. D.
	Title	S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation			Type	Journal Article
	Year	1992	Publication	Sverkhprovodimost': Fizika, Khimiya, Tekhnika	Abbreviated Journal	Sverkhprovodimost': Fizika, Khimiya, Tekhnika
	Volume	5	Issue	12	Pages	2386-2402
	Keywords	YBCO HTS switches
	Abstract	A study was made on processes of switching of thin niobium film strips between superconducting and normal states under the effect of optical radiation pulse and voltage step. The results are described satisfactorily by the model of spatial homogeneous electron heating. It is shown that limiting switching times can be equal to several shares of nanosecond at 4.2 K. Preliminary results for YBa2Cu3O-7-x films are presented. Prospects and advantages of creation of ducting structures of narrow streps, are discussed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0131-5366	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1674
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.
	Title	Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field			Type	Journal Article
	Year	1977	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	45	Issue	3	Pages	555-565
	Keywords	Ge, GaAs, magnetic field, donors, energy spectrum
	Abstract	The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1728
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E.
	Title	Intense electromagnetic radiation heating of superconductor electrons in resistive state			Type	Journal Article
	Year	1988	Publication	Fizika Nizkikh Temperatur	Abbreviated Journal	Fizika Nizkikh Temperatur
	Volume	14	Issue	7	Pages	753-763
	Keywords	Nb HEB
	Abstract	An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1697
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M.
	Title	Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium			Type	Journal Article
	Year	1971	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	14	Issue	6	Pages	241
	Keywords	Ge, gamma irradiation, defects, impurities
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1742
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Semenov, A. D.; Sergeev, A. V.
	Title	Processes of electron-phonon interaction in thin YBaCuO films			Type	Journal Article
	Year	1991	Publication	Phys. C: Supercond.	Abbreviated Journal	Phys. C: Supercond.
	Volume	185-189	Issue		Pages	1371-1372
	Keywords	YBCO HTS detectors
	Abstract	The ultrafast voltage response of YBaCuO films to laser radiation is studied and compared with previously investigated quasiparicles response to radiation of submillimeter wavelength range. Voltage shift under the visible light radiation has two components. Picosecond response realized as suppression superconductivity by nonequilibrium excess quasiparticles, response time is determined by quasiparticles recombination rate. Nanosecond response is probably due to bolometric effect.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4534	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1676
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L.
	Title	Observation of free carrier resonances in p-type germanium at submillimeter wavelengths			Type	Journal Article
	Year	1978	Publication	Sov. Phys. Solid State	Abbreviated Journal	Sov. Phys. Solid State
	Volume	20	Issue	4	Pages	573-579
	Keywords	p-Ge, free carriers, resonances
	Abstract	The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1721
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L.
	Title	Energy spectrum of acceptors in germanium and its response to a magnetic field			Type	Journal Article
	Year	1977	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	45	Issue	4	Pages	769-776
	Keywords	p-Ge, photoconductivity, energy spectrum, magnetic field
	Abstract	We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1727
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Lugovaya, G. Ya.; Serebryakova, N. A.; Chinkova, E. V.
	Title	Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials			Type	Journal Article
	Year	1992	Publication	Sverkhprovodimost': Fizika, Khimiya, Tekhnika	Abbreviated Journal	Sverkhprovodimost': Fizika, Khimiya, Tekhnika
	Volume	5	Issue	6	Pages	1129-1140
	Keywords	IR HEB detectors
	Abstract	Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0131-5366	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1673
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.
	Title	Measurement of the energy gap in the compound YBaCu₃O_9-δ on the basis of the IR absorption spectrum			Type	Journal Article
	Year	1987	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	46	Issue	5	Pages	237-238
	Keywords	YBCO HTS detectors
	Abstract	For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1703
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P.
	Title	Binding energy of a carrier with a neutral impurity atom in germanium and in silicon			Type	Journal Article
	Year	1971	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	14	Issue	5	Pages	185-186
	Keywords	Ge, Si, neutral impurity atom, binding energy
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1739
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I.
	Title	Submillimeter backward-wave-tube spectrometer-relaxometer			Type	Journal Article
	Year	1987	Publication	Pribory i Tekhnika Eksperimenta	Abbreviated Journal	Pribory i Tekhnika Eksperimenta
	Volume	30	Issue	4	Pages	131-137
	Keywords	BWO, applications
	Abstract	A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1699
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Kinetics of electron and hole binding into excitons in germanium			Type	Journal Article
	Year	1983	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	57	Issue	2	Pages	369-376
	Keywords	Ge, electron and hole binding
	Abstract	The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1711
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Cross section for binding of free carriers into excitons in germanium			Type	Journal Article
	Year	1981	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	33	Issue	11	Pages	574
	Keywords	Ge, excitons, photoconductivity
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1718
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G.
	Title	Capture of photoexcited carriers by shallow impurity centers in germanium			Type	Journal Article
	Year	1979	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	50	Issue	4	Pages	728-734
	Keywords	Ge, photoexcited carriers, shallow impurity centers
	Abstract	Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1720
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V.
	Title	Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction			Type	Journal Article
	Year	1991	Publication	Phys. B Condens. Mat.	Abbreviated Journal	Phys. B Condens. Mat.
	Volume	169	Issue	1-4	Pages	629-630
	Keywords	impure superconductors
	Abstract	Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that frequency range of enhancement effect narrows with the decrease of electron mean free path, ℓ, and at ℓ⩽1nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on ℓ are explained by taking into account strong electron-electron interaction in impure metals.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4526	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1682
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V.
	Title	Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction			Type	Journal Article
	Year	1990	Publication	Solid State Communications	Abbreviated Journal	Solid State Communications
	Volume	75	Issue	8	Pages	639-641
	Keywords	impure superconductors
	Abstract	Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0038-1098	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1687
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Observation of the free-exciton spectrum at submillimeter wavelengths			Type	Journal Article
	Year	1972	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	16	Issue	4	Pages	161-162
	Keywords	Ge, energy spectrum, free excitons
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1736
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Population and lifetime of excited states of shallow impurities in Ge			Type	Journal Article
	Year	1979	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	49	Issue	2	Pages	355-362
	Keywords	Ge, photothermal ionization, shallow impurities
	Abstract	An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1719
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Investigation of free excitons in Ge and their condensation at submillimeter wavelengths			Type	Journal Article
	Year	1976	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	43	Issue	1	Pages	116-122
	Keywords	Ge, free excitons
	Abstract	Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1731
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Submillimeter spectroscopy of semiconductors			Type	Journal Article
	Year	1973	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	37	Issue	2	Pages	299-304
	Keywords	semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons
	Abstract	The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
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	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1735
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