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Author Tiulina, V.; Iomdina, E.; Goltsman, G.; Seliverstov, S.; Sianosyan, A.; Teplyakova, K.; Rusova, A.; Zaitsev, S.; Zernii, E.; Senin, I. url  doi
openurl 
  Title UVB promotes the initiation of uveitic inflammatory and changes in thehydration of the cornea in vivo Type Miscellaneous
  Year 2019 Publication FEBS Open Bio Abbreviated Journal FEBS Open Bio  
  Volume 9 Issue S1 Pages 79  
  Keywords medicine; scheimpflug imaging; UVB; confocal microscopy; cornea; optical coherent tomography; rabbit eyes; terahertz radiation  
  Abstract Recently, active research has been conducted in the field of terahertz (THz) scanning of human tissues for non­invasive determination of their hydration level, which haves hown high diagnostic efficiency of this technology in various pathological conditions. Recently, we have developed a laboratory model of the facility for monitoring the state of the water balance of the cornea using THz scanning in vivo, which opens up the possibility of applying this approach in ophthalmology. The aim of the work wasto compare the results of the THz scan of the cornea with its clinical changes using the example of an experimental model of the UV­ induced keratouveitis. Anexperimental study, which included a comprehensive assessment of clinical changes in the cornea of rabbits during keratouveitis induction, revealed a decrease in the stability of the tear film, pathological changes in the corneal epithelium and stroma, as well as its anatomical and optical parameters. Comparison of data obtained in the THz scan of the cornea with tears production, optical coherence tomography and confocal microscopy showed their consistency in all observation periods, which allows us to conclude that the developed laboratory setup works and the feasibility of further research to promote the corneal hydration evaluation technology in clinical practice. Acknowledgements: Research was funded by the RSF, grant number 16­15­00255.  
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  Series Volume Series Issue Edition  
  ISSN (down) 2211-5463 ISBN Medium  
  Area Expedition Conference  
  Notes Poster P-01-040 Approved no  
  Call Number Serial 1276  
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Author Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. url  doi
openurl 
  Title Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation Type Journal Article
  Year 2021 Publication Adv. Electron. Mater. Abbreviated Journal Adv. Electron. Mater.  
  Volume 7 Issue 3 Pages 2000872  
  Keywords SWCNT transistors  
  Abstract The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN (down) 2199-160X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1843  
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Author Pyatkov, F.; Khasminskaya, S.; Kovalyuk, V.; Hennrich, F.; Kappes, M. M.; Goltsman, G. N.; Pernice, W. H. P.; Krupke, R. url  doi
openurl 
  Title Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers Type Journal Article
  Year 2017 Publication Beilstein J. Nanotechnol. Abbreviated Journal Beilstein J. Nanotechnol.  
  Volume 8 Issue Pages 38-44  
  Keywords carbon nanotubes; CNT; infrared; integrated optics devices; nanomaterials  
  Abstract Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources.  
  Address Department of Materials and Earth Sciences, Technische Universitat Darmstadt, Darmstadt 64287, Germany  
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  ISSN (down) 2190-4286 ISBN Medium  
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  Notes PMID:28144563; PMCID:PMC5238692 Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1109  
Permanent link to this record
 
 
Author Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  doi
isbn  openurl
  Title Room temperature silicon detector for IR range coated with Ag2S quantum dots Type Conference Article
  Year 2019 Publication IRMMW-THz Abbreviated Journal  
  Volume Issue Pages  
  Keywords Ag2S quantum dots  
  Abstract A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.  
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  ISSN (down) 2162-2035 ISBN 978-1-5386-8285-2 Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number 8874267 Serial 1286  
Permanent link to this record
 
 
Author Goltsman, G. N.; Korneev, A. A.; Finkel, M. I.; Divochiy, A. V.; Florya, I. N.; Korneeva, Y. P.; Tarkhov, M. A.; Ryabchun, S. A.; Tretyakov, I. V.; Maslennikov, S. N.; Kaurova, N. S.; Chulkova, G. M.; Voronov, B. M. url  doi
openurl 
  Title Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter Type Abstract
  Year 2010 Publication 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves Abbreviated Journal  
  Volume Issue Pages 1-1  
  Keywords SSPD, SNSPD, HEB  
  Abstract We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications.  
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  ISSN (down) 2162-2027 ISBN Medium  
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  Notes Approved no  
  Call Number RPLAB @ sasha @ goltsman2010superconducting Serial 1028  
Permanent link to this record
 
 
Author Vorobyov, V. V.; Kazakov, A. Y.; Soshenko, V. V.; Korneev, A. A.; Shalaginov, M. Y.; Bolshedvorskii, S. V.; Sorokin, V. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Voronov, B. M.; Shalaev, V. M.; Akimov, A. V.; Goltsman, G. N. url  doi
openurl 
  Title Superconducting detector for visible and near-infrared quantum emitters [Invited] Type Journal Article
  Year 2017 Publication Opt. Mater. Express Abbreviated Journal Opt. Mater. Express  
  Volume 7 Issue 2 Pages 513-526  
  Keywords SSPD, SNSPD  
  Abstract Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500–1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial.  
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  ISSN (down) 2159-3930 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1234  
Permanent link to this record
 
 
Author Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. url  doi
openurl 
  Title Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations Type Journal Article
  Year 2019 Publication AIP Advances Abbreviated Journal AIP Advances  
  Volume 9 Issue 10 Pages 105220  
  Keywords GaAs/AlGaAs superlattice, SL, NbN HEB  
  Abstract Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level.  
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  ISSN (down) 2158-3226 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1274  
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Author Ren, Y.; Zhang, D. X.; Zhou, K. M.; Miao, W.; Zhang, W.; Shi, S. C.; Seleznev, V.; Pentin, I.; Vakhtomin, Y.; Smirnov, K. url  doi
openurl 
  Title 10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser Type Journal Article
  Year 2019 Publication AIP Advances Abbreviated Journal AIP Advances  
  Volume 9 Issue 7 Pages 075307  
  Keywords NbN HEB mixers, QCL, IR  
  Abstract We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated.

The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy.		  
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  ISSN (down) 2158-3226 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1293  
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Author Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. url  doi
openurl 
  Title Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers Type Journal Article
  Year 2017 Publication IEEE Trans. Terahertz Sci. Technol. Abbreviated Journal IEEE Trans. Terahertz Sci. Technol.  
  Volume 7 Issue 1 Pages 53-59  
  Keywords NbN HEB mixer  
  Abstract In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers.  
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  ISSN (down) 2156-3446 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1330  
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Author Klapwijk, T. M.; Semenov, A. V. url  doi
openurl 
  Title Engineering physics of superconducting hot-electron bolometer mixers Type Journal Article
  Year 2017 Publication IEEE Trans. THz Sci. Technol. Abbreviated Journal IEEE Trans. THz Sci. Technol.  
  Volume 7 Issue 6 Pages 627-648  
  Keywords HEB mixers  
  Abstract Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments.  
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  Series Volume Series Issue Edition  
  ISSN (down) 2156-342X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1292  
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