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Масленников, С. Н.; Вахтомин, Ю. Б.; Антипов, С. В.; Смирнов, К. В.; Каурова, Н. С.; Гришина, Е. В.; Воронов, Б. М.; Гольцман, Г. Н. |
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Смесители на основе электронного разогрева в тонких пленках NbN для частот 2.5 и 3.8 ТГц |
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2004 |
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Десятая всероссийская научная конференция студентов-физиков и молодых ученых (ВНКСФ-10) |
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Москва |
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russian |
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RPLAB @ s @ qoheb_vnksf10_2004_rus |
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350 |
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Vachtomin, Yu. B.; Antipov, S. V.; Kaurova, N. S.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Svechnikov, S. I.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
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Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess |
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Conference Article |
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2004 |
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Proc. 29th IRMMW / 12th THz |
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Proc. 29th IRMMW / 12th THz |
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329-330 |
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We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area. |
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Karlsruhe, Germany |
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Karlsruhe, Germany |
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RPLAB @ s @ nt_ifb_lopow_qoheb_karlsruhe_2004 |
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354 |
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Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. |
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Title |
Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers |
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Journal Article |
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2004 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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84 |
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11 |
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1958-1960 |
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NbN HEB mixers |
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We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K
at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz. |
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352 |
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Kaurova, N. S.; Finkel, M. I.; Maslennikov, S. N.; Vahtomin, Yu. B.; Antipov, S. V.; Smirnov, K. V.; Voronov, B. M.; Gol'tsman, G. N.; Ilyin, K. S. |
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Title |
Submillimeter mixer based on YBa2Cu3O7-x thin film |
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Conference Article |
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2004 |
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Proc. 1-st conf. Fundamental problems of high temperature superconductivity |
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291 |
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HTS, HEB mixer |
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Moscow-Zvenigorod |
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Moscow-Zvenigorod |
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355 |
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Каурова, Н. С.; Финкель, М. И.; Масленников, С. Н.; Вахтомин, Ю. Б.; Антипов, С. В.; Смирнов, К. В.; Воронов, Б. М.; Гольцман, Г. Н.; Ильин, К. С. |
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Смеситель субмиллиметрового диапазона длин волн на основе тонкой пленки YBa2Cu3O7-x |
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Conference Article |
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Year |
2004 |
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1-я международная конференция Фундаментальные проблемы высокотемпературной сверхпроводимости |
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291 |
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Москва-Звенигород |
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Москва-Звенигород |
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russian |
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RPLAB @ s @ htsmix_zvenigorod_2004_rus |
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356 |
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Ozhegov, R. V.; Gorshkov, K. N.; Smirnov, K. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. |
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Terahertz imaging system based on superconducting integrated receiver |
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2010 |
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Proc. 2-nd Int. Conf. Terahertz and Microwave radiation: Generation, Detection and Applications |
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Proc. 2-nd Int. Conf. Terahertz and Microwave radiation: Generation, Detection and Applications |
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20-22 |
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SIS mixer, SIR |
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The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Developing an array of SIRs would allow obtaining amplitude and phase characteristics of incident radiation in the plane of the receiver. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compare to traditional systems: i) high temperature resolution, comparable to the best results for incoherent receivers; ii) high spectral resolution allowing spectral analysis of various substances; iii) the local oscillator frequency can be varied to obtain images at different frequencies, effectively providing “color” images; iv) since a heterodyne receiver preserves the phase of the radiation, it is possible to construct 3D images. The paper presents a prototype THz imaging system using an 1 pixel SIR. We have studied the dependence of the noise equivalent temperature difference (NETD) on the integration time and also possible ways of achieving best possible sensitivity. An NETD of 13 mK was obtained with an integration time of 1 sec a detection bandwidth of 4 GHz at a local oscillator frequency of 520 GHz. An important advantage of an FFO is its wide operation range: 300-700 GHz. |
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ozhegov2010terahertz |
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1397 |
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Гольцман, Г.Н.; Лудков, Д.Н. |
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Сверхпроводниковые смесители на горячих электронах терагерцового диапазона и их применение в радиоастрономии |
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2003 |
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Изв. высших учебных заведений. Радиофизика |
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46 |
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8/9 |
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HEB, mixers |
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RPLAB @ s @ |
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473 |
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Корнеев, Александр Александрович |
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Квантовая эффективность и темновой счет NbN сверхпроводникового инфракрасного однофотонного детектора |
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2006 |
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М. МПГУ |
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Ph.D. thesis |
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Масленников, Сергей Николаевич |
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Смесители на эффекте электронного разогрева для терагерцового и инфракрасного диапазонов |
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2007 |
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М. МПГУ |
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HEB, detector, mixer, terahertz, THz, infrared, IR, direct detection effect, conversion loss |
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Ph.D. thesis |
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Finkel, Matvey; Vachtomin, Yuriy; Antipov, Sereey; Drakinski, Vladimir; Kaurova, Natalia; Voronov, Boris; Goltsman, Greeory |
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Title |
Gain bandwidth and noise temperature of NbTiN HEB mixer |
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Conference Article |
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2003 |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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276-285 |
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NbTiN HEB mixer |
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We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz. |
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