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Author Gol’tsman, G. N.; Kouminov, P. B.; Goghidze, I. G.; Karasik, B. S.; Gershenzon, E. M. url  doi
openurl 
  Title Nonbolometric and fast bolometric responses of YBaCuO thin films in superconducting, resistive, and normal states Type Conference Article
  Year 1994 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume (down) 2159 Issue Pages 81-86  
  Keywords YBCO HTS HEB, nonbolornetric  
  Abstract The transient voltage response in both epitaxial and granular YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 micrometers and 1.54 micrometers was studied. In normal and resistive states both types of films demonstrate two components: nonequilibrium picosecond component and following bolometric nanosecond. The normalized amplitudes are almost the same for all films. In superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to several orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of order parameter by the excess of quasiparticles followed by the change of resistance in normal and resistive states or kinetic inductance in superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the crossection for current percolation through the disordered network os Josephson weak links and by a decrease of condensate density in neighboring regions.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Nahum, M.; Villegier, J.-C.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference High-Temperature Superconducting Detectors: Bolometric and Nonbolometric  
  Notes Approved no  
  Call Number Serial 1641  
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Author Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title High speed hot-electron superconducting bolometer Type Conference Article
  Year 1993 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume (down) 2104 Issue Pages 181-182  
  Keywords NbN HEb, Nb, Al  
  Abstract Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Birch, J.R.; Parker, T.J.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference 18th International Conference on Infrared and Millimeter Waves  
  Notes Approved no  
  Call Number Serial 1652  
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Author Danerud, M.; Winkler, D.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N.; Lindgren, M. url  doi
openurl 
  Title Picosecond detection of infrared radiation with YBa2Cu3O7-δ thin films Type Conference Article
  Year 1993 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume (down) 2104 Issue Pages 183-184  
  Keywords YBCO HTS HEB detectors  
  Abstract Picosecond nonequilibrium and slow bolometric responses from a patterned high-Tc superconducting (HTS) film due toinfrared radiation were investigated using both modulation and pulse techniques. Measurements at A, = 0.85 [tm andA, = 10.6 lim have shown a similar behaviour of the response vs modulation frequency f. The responsivity of the HTS filmbased detector at f ..- 0.6-1 GHz is estimated to be 10-2 – 10-1 V/W.  
  Address  
  Corporate Author Thesis  
  Publisher Spie Place of Publication Editor Birch, J.R.; Parker, T.J.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference 18th International Conference on Infrared and Millimeter Waves  
  Notes https://inis.iaea.org/search/searchsinglerecord.aspx?recordsFor=SingleRecord&RN=25034664 Approved no  
  Call Number 10.1117/12.2298489 Serial 1653  
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Author Gershenzon, E. M.; Gol'tsman, G. N. url  doi
openurl 
  Title Hot-electron superconducting mixers Type Conference Article
  Year 1993 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume (down) 2104 Issue Pages 329-330  
  Keywords  
  Abstract The creation of low noise heterodyne receivers for frequencies above 1 THz is in the urgentneed for radio astronomy, laser spectroscopy, plasma diagnostic, etc. In this paper we discussthe nonlinear effect related to hot electrons in superconductors, and their potential use in lownoise submilimeter wave mixer. We also discuss results achieved so far as well as possible futuredevelopments.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Birch, J.R.; Parker, T.J.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference 18th International Conference on Infrared and Millimeter Waves  
  Notes Approved no  
  Call Number Serial 1654  
Permanent link to this record
 

 
Author Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Moshkova, M.; Morozov, P.; Seleznev, V.; Smirnov, K. url  doi
openurl 
  Title Photon-number-resolving SSPDs with system detection efficiency over 50% at telecom range Type Conference Article
  Year 2018 Publication Proc. AIP Conf. Abbreviated Journal  
  Volume (down) 1936 Issue 1 Pages 020019  
  Keywords NbN PNR SSPD, SNSPD  
  Abstract We used technology of making high-efficiency superconducting single-photon detectors as a basis for improvement of photon-number-resolving devices. By adding optical cavity and using an improved NbN superconducting film, we enhanced previously reported system detection efficiency at telecom range for such detectors. Our results show that implementation of optical cavity helps to develop four-section device with quantum efficiency over 50% at 1.55 µm. Performed experimental studies of detecting multi-photon optical pulses showed irregularities over defining multi-photon through single-photon quantum efficiency.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number doi:10.1063/1.5025457 Serial 1231  
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Author Baeva, E.; Sidorova, M.; Korneev, A.; Goltsman, G. url  doi
openurl 
  Title Precise measurement of the thermal conductivity of superconductor Type Conference Article
  Year 2018 Publication Proc. AIP Conf. Abbreviated Journal Proc. AIP Conf.  
  Volume (down) 1936 Issue 1 Pages 020003 (1 to 4)  
  Keywords NbN SSPD, SNSPD  
  Abstract Measuring the thermal properties such as the heat capacity provide information about intrinsic mechanisms operated inside. In general, the ratio between electron and phonon specific heat Ce/Cp shows how the absorbed energy shared between electron and phonon subsystems. In this work we make estimations for amplitude-modulated absorption of THz radiation technique for investigation of the ratio Ce/Cp in superconducting Niobium Nitride (NbN) at T = Tc. Our results indicates that experimentally the frequency of modulation has to be extra large to extract the quantity. We perform a new technique allowed to work at low frequency with accurately measurement of absorbed power.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number doi:10.1063/1.5025441 Serial 1311  
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Author Elmanova, A.; An, P.; Kovalyuk, V.; Golikov, A.; Elmanov, I.; Goltsman, G. url  doi
openurl 
  Title Study of silicon nitride O-ring resonator for gas-sensing applications Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume (down) 1695 Issue Pages 012124  
  Keywords silicon nitride O-ring resonator, ORR  
  Abstract In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1176  
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Author Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. url  doi
openurl 
  Title Planar Schottky diode with a Γ-shaped anode suspended bridge Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume (down) 1695 Issue Pages 012154  
  Keywords Schottky diode, GaAs, InP substrate  
  Abstract In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1152  
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Author Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. url  doi
openurl 
  Title Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume (down) 1695 Issue Pages 012156  
  Keywords Shottky diode, THz, direct detector, multipixel camera  
  Abstract In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1153  
Permanent link to this record
 

 
Author Titova, N. A.; Baeva, E. M.; Kardakova, A. I.; Goltsman, G. N. url  doi
openurl 
  Title Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume (down) 1695 Issue Pages 012190  
  Keywords NbN films, insulating membrane  
  Abstract Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in local equilibrium. In such case, the cooling of the NbN-based devices strongly depends on acoustic matching to the substrate and substrate thermal characteristics. For the insulating membrane much thicker than the NbN film, our preliminary results demonstrate that the membrane serves as an additional channel for the thermal relaxation of the NbN sample. That implies a negligible role of thermal boundary resistance of the NbN-SiNx:H interface in comparison with the internal thermal resistance of the insulating membrane.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1165  
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