| Records |
| Author |
Kuzin, Aleksei; Elmanov, Ilia; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
| Title |
Silicon nitride focusing grating coupler for input and output light of NV-centers |
Type |
Conference Article |
Year  |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
| Volume |
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Issue |
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Pages |
349-353 |
| Keywords |
NV-centers, focusing grating coupler |
| Abstract |
Here we presented the numerical results for the calculation of focusing grating coupler efficiency in the visible wavelength range. Using the finite element method, the optimal geometric parameters, including filling factor and grating period for a central wavelength of 637 nm, were found. Obtained results allow to input/output single-photon radiation from NV-centers, and can be used for research and development of a scalable on-chip quantum optical computing. |
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Edition |
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| ISSN |
2724-0029 |
ISBN |
978-88-85741-44-7 |
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Conference |
32nd European Modeling & Simulation Symposium |
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no |
| Call Number |
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Serial |
1841 |
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| Author |
Manova, N. N.; Simonov, N. O.; Korneeva, Y. P.; Korneev, A. A. |
| Title |
Developing of NbN films for superconducting microstrip single-photon detector |
Type |
Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
Issue |
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Pages |
012116 (1 to 5) |
| Keywords |
NbN SSPD, SNSPD, NbN films |
| Abstract |
We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20. |
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Edition |
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| ISSN |
1742-6588 |
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no |
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Serial |
1786 |
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| Author |
Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
| Title |
Helicity-sensitive plasmonic terahertz interferometer |
Type |
Journal Article |
| Year |
2020 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
| Volume |
20 |
Issue |
10 |
Pages |
7296-7303 |
| Keywords |
graphene, plasmonic interferometer, radiation helicity, terahertz radiation |
| Abstract |
Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. |
| Address |
CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland |
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Edition |
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| ISSN |
1530-6984 |
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| Notes |
PMID:32903004 |
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no |
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Serial |
1781 |
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| Author |
Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. |
| Title |
On chip carbon nanotube tunneling spectroscopy |
Type |
Journal Article |
| Year |
2020 |
Publication |
Fullerenes, Nanotubes and Carbon Nanostructures |
Abbreviated Journal |
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| Volume |
28 |
Issue |
1 |
Pages |
50-53 |
| Keywords |
carbon nanotubes, CNT, scanning tunneling microscope, STM |
| Abstract |
We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes. |
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| Publisher |
Taylor & Francis |
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no |
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doi:10.1080/1536383X.2019.1671365 |
Serial |
1269 |
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| Author |
Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory |
| Title |
Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors |
Type |
Abstract |
| Year |
2020 |
Publication |
Graphene and 2dm Virt. Conf. |
Abbreviated Journal |
Graphene and 2DM Virt. Conf. |
| Volume |
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Issue |
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Pages |
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| Keywords |
single layer graphene, SLG, CVD, plasmons, FET |
| Abstract |
Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464. |
| Address |
Grenoble, France |
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Graphene and 2dm Virtual Conference & Expo |
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no |
| Call Number |
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Serial |
1743 |
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| Author |
Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. |
| Title |
Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid |
Type |
Journal Article |
| Year |
2020 |
Publication |
J. Luminescence |
Abbreviated Journal |
J. Luminescence |
| Volume |
220 |
Issue |
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Pages |
117008 (1 to 7) |
| Keywords |
Ag2S QD, quantum dots |
| Abstract |
The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA. |
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| ISSN |
0022-2313 |
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no |
| Call Number |
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Serial |
1267 |
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| Author |
Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. |
| Title |
Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation |
Type |
Journal Article |
| Year |
2020 |
Publication |
Sci. Rep. |
Abbreviated Journal |
Sci. Rep. |
| Volume |
10 |
Issue |
1 |
Pages |
16819 |
| Keywords |
VN HEB |
| Abstract |
The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively. |
| Address |
National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia |
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Edition |
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| ISSN |
2045-2322 |
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| Notes |
PMID:33033360; PMCID:PMC7546726 |
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no |
| Call Number |
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Serial |
1797 |
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| Author |
Polyakova, M. I.; Korneev, A. A.; Semenov, A. V. |
| Title |
Comparison single- and double- spot detection efficiencies of SSPD based to MoSi and NbN films |
Type |
Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
Issue |
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Pages |
012146 (1 to 3) |
| Keywords |
NbN SSPD, SNSPD, MoSi |
| Abstract |
In this work, we present results of quantum detector tomography of superconducting single photon detector (SSPD) based on MoSi film, and compare them with previously reported data on NbN. We find that for both materials hot spot interaction length coincides with the strip width, and the dependence of single and double-spot detection efficiencies on bias current are compatible with sufficiently large hot-spot size, approaching the strip width. |
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| ISSN |
1742-6588 |
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no |
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Serial |
1787 |
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Prokhodtsov, A.; Kovalyuk, V.; An, P.; Golikov, A.; Shakhovoy, R.; Sharoglazova, V.; Udaltsov, A.; Kurochkin, Y.; Goltsman, G. |
| Title |
Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation |
Type |
Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
Issue |
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Pages |
012118 |
| Keywords |
Mach-Zehnder interferometer, MZI |
| Abstract |
In this work, we experimentally studied silicon nitride Mach-Zehnder interferometer (MZI) with two directional couplers and 400 ps optical delay line for telecom wavelength 1550 nm. We achieved the extinction ratio in a range of 0.76-13.86 dB and system coupling losses of 28-44 dB, depending on the parameters of directional couplers. The developed interferometer is promising for the use in a compact random number generator for the needs of a fully integrated quantum cryptography system, where compact design, as well as high generation speed, are needed. |
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1742-6588 |
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no |
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Serial |
1178 |
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| Author |
Rasulova, G. K.; Pentin, I. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Khabibullin, R. A.; Klimov, E. A.; Klochkov, A. N.; Goltsman, G. N. |
| Title |
Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime |
Type |
Journal Article |
| Year |
2020 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
128 |
Issue |
22 |
Pages |
224303 (1 to 11) |
| Keywords |
HEB, resonant tunneling diode, RTD |
| Abstract |
The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states. |
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Edition |
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0021-8979 |
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no |
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1262 |
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