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Author Divochiy, A.; Misiaszek, M.; Vakhtomin, Y.; Morozov, P.; Smirnov, K.; Zolotov, P.; Kolenderski, P. url  doi
openurl 
  Title Single photon detection system for visible and infrared spectrum range Type Journal Article
  Year (down) 2018 Publication Opt. Lett. Abbreviated Journal Opt. Lett.  
  Volume 43 Issue 24 Pages 6085-6088  
  Keywords  
  Abstract We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452-2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric downconversion, where one photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as high as 4x10(4) in our detection setting. A photon detection efficiency as high as 64% at 1550 nm and 15% at 2300 nm was observed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0146-9592 ISBN Medium  
  Area Expedition Conference  
  Notes https://arxiv.org/abs/1807.04273 Approved no  
  Call Number Serial 1227  
Permanent link to this record
 
 
Author Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E. url  doi
openurl 
  Title Amplification of a Raman scattering signal by carbon nanotubes Type Journal Article
  Year (down) 2018 Publication Dokl. Phys. Abbreviated Journal Dokl. Phys.  
  Volume 63 Issue 12 Pages 496-498  
  Keywords carbon nanotubes, CNT, Raman scattering, RLS  
  Abstract The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1028-3358 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1775  
Permanent link to this record
 
 
Author Elezov, M. S.; Scherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. url  doi
openurl 
  Title Active and passive phase stabilization for the all-fiber Michelson interferometer Type Conference Article
  Year (down) 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages 051014 (1 to 5)  
  Keywords Michelson interferometer, phase stabilization  
  Abstract We put forward two methods for phase stabilization in the all-fiber Michelson interferometer. To perform passive phase stabilization, we use a heat bath for all fibers and electro-optical components, and put the interferometer in a hermetic case. To perform active phase stabilization, we monitor output power of the interferometer and develop an electronic feedback control. The phase stabilization methods enable stable interference pattern for several minutes, and can be helpful for the development of the optimal quantum receiver for coherent signals.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1299  
Permanent link to this record
 
 
Author Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G. url  doi
openurl 
  Title Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors Type Journal Article
  Year (down) 2018 Publication Phys. Status Solidi B Abbreviated Journal Phys. Status Solidi B  
  Volume 255 Issue 1 Pages 1700227 (1 to 6)  
  Keywords carbon nanotube schottky diodes, CNT  
  Abstract Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0370-1972 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1321  
Permanent link to this record
 
 
Author Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. url  doi
openurl 
  Title Graphene-based lateral Schottky diodes for detecting terahertz radiation Type Conference Article
  Year (down) 2018 Publication Proc. Optical Sensing and Detection V Abbreviated Journal Proc. Optical Sensing and Detection V  
  Volume 10680 Issue Pages 30-39  
  Keywords graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves  
  Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.  
  Address  
  Corporate Author Thesis  
  Publisher Spie Place of Publication Editor Berghmans, F.; Mignani, A.G.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number 10.1117/12.2307020 Serial 1306  
Permanent link to this record
 
 
Author Florya, I. N.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Korneev, A. A.; Goltsman, G. N. url  doi
openurl 
  Title Photon counting statistics of superconducting single-photon detectors made of a three-layer WSi film Type Journal Article
  Year (down) 2018 Publication Low Temp. Phys. Abbreviated Journal Low Temp. Phys.  
  Volume 44 Issue 3 Pages 221-225  
  Keywords WSi SSPD, SNSPD  
  Abstract Superconducting nanowire single-photon detectors (SNSPD) are used in quantum optics when record-breaking time resolution, high speed, and exceptionally low levels of dark counts (false readings) are required. Their detection efficiency is limited, however, by the absorption coefficient of the ultrathin superconducting film for the detected radiation. One possible way of increasing the detector absorption without limiting its broadband response is to make a detector in the form of several vertically stacked layers and connect them in parallel. For the first time we have studied single-photon detection in a multilayer structure consisting of three superconducting layers of amorphous tungsten silicide (WSi) separated by thin layers of amorphous silicon. Two operating modes of the detector are illustrated: an avalanche regime and an arm-trigger regime. A shift in these modes occurs at currents of ∼0.5–0.6 times the critical current of the detector.

This work was supported by technical task No. 88 for scientific research at the National Research University “Higher School of Economics,” Grant No. 14.V25.31.0007 from the Ministry of Education and Science of Russia, and the work of G. N. Goltsman was supported by task No. 3.7328.2017/VU of the Ministry of Education and Science of Russia.		  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-777X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1310  
Permanent link to this record
 
 
Author Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. url  doi
openurl 
  Title Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices Type Journal Article
  Year (down) 2018 Publication Nanotechnol. Abbreviated Journal Nanotechnol.  
  Volume 29 Issue 24 Pages 245204 (1 to 8)  
  Keywords single layer graphene, graphene nanoribbons  
  Abstract We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.  
  Address Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0957-4484 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:29553479 Approved no  
  Call Number Serial 1308  
Permanent link to this record
 
 
Author Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. url  doi
openurl 
  Title The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts Type Conference Article
  Year (down) 2018 Publication Materials Today: Proc. Abbreviated Journal Materials Today: Proc.  
  Volume 5 Issue 13 Pages 27301-27306  
  Keywords graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor  
  Abstract We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2214-7853 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1316  
Permanent link to this record
 
 
Author Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. url  doi
openurl 
  Title Towards to the development of THz detectors based on carbon nanostructures Type Conference Article
  Year (down) 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1092 Issue Pages 012039 (1 to 4)  
  Keywords CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors  
  Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1302  
Permanent link to this record
 
 
Author Golikov, A.; Kovalyuk, V.; An, P.; Zubkova, E.; Ferrari, S.; Pernice, W.; Korneev, A.; Goltsman, G. url  doi
openurl 
  Title Silicon nitride nanophotonic circuit for on-chip spontaneous four-wave mixing Type Conference Article
  Year (down) 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages 051051  
  Keywords O-ring resonator  
  Abstract Here we present an integrated nanophotonic circuit for on-chip spontaneous four-wave mixing. The fabricated device includes an O-ring resonator, a Bragg noch-filter as well as a nine-channel arrayed waveguide gratings (AWG) operated in the C-band wavelength range (1550 nm). The measured optical losses of the device (-6.8 dB) as well as a high Q-factor (> 1.2×105) shows a good potential for realizing the spontaneous four-wave mixing on the silicon nitride chip.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1193  
Permanent link to this record
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