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Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
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Title |
Investigation of excited donor states in GaAs |
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1974 |
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Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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Volume |
7 |
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10 |
Pages |
1248-1250 |
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Keywords |
GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
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Year |
1975 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
40 |
Issue |
2 |
Pages |
311-315 |
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Keywords |
Ge, cyclotron resonance |
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Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
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Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
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Year |
1975 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
22 |
Issue |
4 |
Pages |
95-97 |
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Keywords |
Ge, impurities, excited states, absorption spectra |
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1773 |
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Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
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Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
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Year |
1976 |
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JETP Lett. |
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JETP Lett. |
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Volume |
24 |
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3 |
Pages |
125-128 |
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Keywords |
n-Ge, cyclotron-impurity resonance |
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1730 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
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Year |
1976 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
43 |
Issue |
1 |
Pages |
116-122 |
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Keywords |
Ge, free excitons |
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Abstract |
Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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1731 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
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Title |
Investigation of population and ionization of donor excited states in Ge |
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Conference Article |
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Year |
1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
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631-634 |
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Keywords |
Ge, donor excited states |
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Amsterdam |
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North-Holland Publishing Co. |
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1732 |
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Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
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Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
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Year |
1976 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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10 |
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1379-1383 |
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Keywords |
Ge, cyclotron resonance, charged impurities, |
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1772 |
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Author |
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
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Title |
Carrier lifetime in excited states of shallow impurities in germanium |
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Journal Article |
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Year |
1977 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
25 |
Issue |
12 |
Pages |
539-543 |
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Keywords |
Ge, shallow impurities, excited states |
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1726 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
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Title |
Energy spectrum of acceptors in germanium and its response to a magnetic field |
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Journal Article |
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Year |
1977 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
45 |
Issue |
4 |
Pages |
769-776 |
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Keywords |
p-Ge, photoconductivity, energy spectrum, magnetic field |
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Abstract |
We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression. |
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1727 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
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Title |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
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Year |
1977 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
45 |
Issue |
3 |
Pages |
555-565 |
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Keywords |
Ge, GaAs, magnetic field, donors, energy spectrum |
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The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. |
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1728 |
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