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Author |
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
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Title |
Carrier lifetime in excited states of shallow impurities in germanium |
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Journal Article |
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Year |
1977 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
25 |
Issue |
12 |
Pages |
539-543 |
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Keywords |
Ge, shallow impurities, excited states |
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1726 |
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Author |
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
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Title |
Effect of a high magnetic field on the spectrum of donors in InSb |
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Journal Article |
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Year |
1977 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
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Volume |
11 |
Issue |
12 |
Pages |
2373-2375 |
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Keywords |
InSb, energy spectrum, donors, high magnetic field |
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Russian |
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Воздействие сильного магнитного поля на спектр доноров в InSb |
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1729 |
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Author |
Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
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Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
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Journal Article |
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Year |
1976 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
24 |
Issue |
3 |
Pages |
125-128 |
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Keywords |
n-Ge, cyclotron-impurity resonance |
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1730 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
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Title |
Investigation of population and ionization of donor excited states in Ge |
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Conference Article |
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Year |
1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
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631-634 |
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Keywords |
Ge, donor excited states |
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Amsterdam |
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North-Holland Publishing Co. |
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no |
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1732 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
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Title |
Investigation of excited donor states in GaAs |
Type |
Journal Article |
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Year |
1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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Volume |
7 |
Issue |
10 |
Pages |
1248-1250 |
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Keywords |
GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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