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Author Beck, M.; Klammer, M.; Lang, S.; Leiderer, P.; Kabanov, V. V.; Gol’tsman, G. N.; Demsar, J. url  openurl
  Title Energy-gap dynamics of superconducting NbN thin films studied by time-resolved terahertz spectroscopy Type Miscellaneous
  Year 2011 Publication arXiv Abbreviated Journal  
  Volume Issue Pages (up)  
  Keywords NbN thin film, energy gap dynamics  
  Abstract Using time-domain Terahertz spectroscopy we performed direct studies of the photoinduced suppression and recovery of the superconducting gap in a conventional BCS superconductor NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the bare quasiparticle recombination rate, the Cooper pair-breaking rate and the electron-phonon coupling constant, \lambda = 1.1 +/- 0.1, which is in excellent agreement with theoretical estimates.  
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  Notes Duplicated as 641 Approved no  
  Call Number Serial 1388  
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Author Семенов, Александр Владимирович pdf  openurl
  Title Проскальзывание фазы, поглощение электромагнитного излучения и формирование отклика в детекторах на основе узких полосок сверхпроводников Type Manuscript
  Year 2010 Publication М. МПГУ Abbreviated Journal  
  Volume Issue Pages (up)  
  Keywords SSPD, SNSPD, response  
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  Address  
  Corporate Author Thesis Ph.D. thesis  
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  Language Russian Summary Language Original Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1150  
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Author Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. url  openurl
  Title Thermal relaxation in metal films bottlenecked by diffuson lattice excitations of amorphous substrates Type Miscellaneous
  Year 2021 Publication arXiv Abbreviated Journal arXiv  
  Volume Issue Pages (up)  
  Keywords metal films, NbN, InOx, Au/Ni, thermal relaxation  
  Abstract Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature Te of the films as a function of Joule power per unit of area P2D. In all samples, we observe the dependence P2D∝Tne with the exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear T-dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for the phonon mean free path smaller than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.  
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  Notes Approved no  
  Call Number Serial 1163  
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Author Pyatkov, Felix; Khasminskaya, Svetlana; Fütterling, Valentin; Fechner, Randy; Słowik, Karolina; Ferrari, Simone; Kahl1, Oliver; Kovalyuk, Vadim; Rath, Patrik; Vetter, Andreas; Flavel, Benjamin S.; Hennrich, Frank; Kappes, Manfred M.; Gol’tsman, Gregory N.; Korneev, Alexander; Rockstuhl, Carsten; Krupke, Ralph; Pernice, Wolfram H. P. url  openurl
  Title Carbon nanotubes as exceptional electrically driven on-chip light sources Type Miscellaneous
  Year 2016 Publication 2Physics Abbreviated Journal 2Physics  
  Volume Issue Pages (up)  
  Keywords carbon nanotubes, CNT  
  Abstract Carbon nanotubes (CNTs) belong to the most exciting objects of the nanoworld. Typically, around 1 nm in diameter and several microns long, these cylindrically shaped carbon-based structures exhibit a number of exceptional mechanical, electrical and optical characteristics [1]. In particular, they are promising ultra-small light sources for the next generation of optoelectronic devices, where electrical components are interconnected with photonic circuits.

Few years ago, we demonstrated that electically driven CNTs can serve as waveguide-integrated light sources [2]. Progress in the field of nanotube sorting, dielectrophoretical site-selective deposition and efficient light coupling into underlying substrate has made CNTs suitable for wafer-scale fabrication of active hybrid nanophotonic devices [2,3].

Recently we presented a nanotube-based waveguide integrated light emitters with tailored, exceptionally narrow emission-linewidths and short response times [4]. This allows conversion of electrical signals into well-defined optical signals directly within an optical waveguide, as required for future on-chip optical communication. Schematics and realization of this device is shown in Figure 1. The devices were manufactured by etching a photonic crystal waveguide into a dielectric layer following electron beam lithography. Photonic crystals are nanostructures that are also used by butterflies to give the impression of color on their wings. The same principle has been used in this study to select the color of light emitted by the CNT. The precise dimensions of the structure were numerically simulated to tailor the properties of the final device. Metallic contacts in the vicinity to the waveguide were fabricated to provide electrical access to CNT emitters. Finally, CNTs, sorted by structural and electronic properties, were deposited from a solution across the waveguide using dielectrophoresis, which is an electric-field-assisted deposition technique.
 
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  ISSN 2372-1782 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1219  
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Author Zolotov, P.; Divochiy, A.; Korneeva, Yu.; Vakhtomin, Yu.; Seleznev, V.; Smirnov, K. openurl 
  Title Capability investigation of superconducting single-photon detectors, optimized for 800–1200 nm spectrum range Type Miscellaneous
  Year 2015 Publication 3th ICQT Abbreviated Journal 3th ICQT  
  Volume Issue Pages (up)  
  Keywords SSPD, SNSPD  
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  Address Hotel Ukraina (Radisson), Moscow  
  Corporate Author Thesis  
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  Area Expedition Conference  
  Notes Poster Approved no  
  Call Number Serial 1253  
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