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Author Martini, F.; Cibella, S.; Gaggero, A.; Mattioli, F.; Leoni, R. url  doi
openurl 
  Title Waveguide integrated hot electron bolometer for classical and quantum photonics Type Journal Article
  Year 2021 Publication Opt. Express Abbreviated Journal Opt. Express  
  Volume 29 Issue 6 Pages 7956-7965  
  Keywords waveguide HEB  
  Abstract The development of performant integrated detectors, which are sensitive to quantum fluctuations of coherent light, are strongly desired to realize a scalable and determinist photonic quantum processor based on continuous variables states of light. Here, we investigate the performance of hot electron bolometers (HEBs) fabricated on top of a silicon-on-insulator (SOI) photonic circuit showing responsivities up to 8600 V/W and a record noise equivalent temperature of 1.1 dB above the quantum limit. Thanks to a detailed analysis of the noise sources of the waveguide integrated HEB, we estimate 14.8 dBV clearance between the shot noise and electrical noise with just 1.1microW of local oscillator power. The full technology compatibility with superconducting nanowire single photon detectors (SNSPDs) opens the possibility of nonclassical state engineering and state tomography performed within the same platform, enabling a new class of optical quantum processors.  
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  Language English Summary Language Original Title  
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  Series Volume Series Issue Edition  
  ISSN 1094-4087 ISBN Medium  
  Area Expedition Conference  
  Notes (down) PMID:33820252 Approved no  
  Call Number Serial 1212  
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Author Morozov, P.; Lukina, M.; Shirmanova, M.; Divochiy, A.; Dudenkova, V.; Gol'tsman, G. N.; Becker, W.; Shcheslavskiy, V. I. url  doi
openurl 
  Title Singlet oxygen phosphorescence imaging by superconducting single-photon detector and time-correlated single-photon counting Type Journal Article
  Year 2021 Publication Opt. Lett. Abbreviated Journal Opt. Lett.  
  Volume 46 Issue 6 Pages 1217-1220  
  Keywords SSPD, SNSPD, applications  
  Abstract This Letter presents, to the best of our knowledge, a novel optical configuration for direct time-resolved measurements of luminescence from singlet oxygen, both in solutions and from cultured cells on photodynamic therapy. The system is based on the superconducting single-photon detector, coupled to the confocal scanner that is modified for the near-infrared measurements. The recording of a phosphorescence signal from singlet oxygen at 1270 nm has been done using time-correlated single-photon counting. The performance of the system is verified by measuring phosphorescence from singlet oxygen generated by the photosensitizers commonly used in photodynamic therapy: methylene blue and chlorin e6. The described system can be easily upgraded to the configuration when both phosphorescence from singlet oxygen and fluorescence from the cells can be detected in the imaging mode. Thus, co-localization of the signal from singlet oxygen with the areas inside the cells can be done.  
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  Language English Summary Language Original Title  
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  Series Volume Series Issue Edition  
  ISSN 0146-9592 ISBN Medium  
  Area Expedition Conference  
  Notes (down) PMID:33720151 Approved no  
  Call Number Serial 1221  
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Author Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. url  doi
openurl 
  Title Tunnel field-effect transistors for sensitive terahertz detection Type Journal Article
  Year 2021 Publication Nat. Commun. Abbreviated Journal Nat. Commun.  
  Volume 12 Issue 1 Pages 543  
  Keywords field-effect transistors, bilayer graphene, BLG  
  Abstract The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.  
  Address Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu  
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  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2041-1723 ISBN Medium  
  Area Expedition Conference  
  Notes (down) PMID:33483488; PMCID:PMC7822863 Approved no  
  Call Number Serial 1261  
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Author Gorokhov, G.; Bychanok, D.; Gayduchenko, I.; Rogov, Y.; Zhukova, E.; Zhukov, S.; Kadyrov, L.; Fedorov, G.; Ivanov, E.; Kotsilkova, R.; Macutkevic, J.; Kuzhir, P. url  doi
openurl 
  Title THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites Type Journal Article
  Year 2020 Publication Polymers (Basel) Abbreviated Journal Polymers (Basel)  
  Volume 12 Issue 12 Pages 3037 (1 to 14)  
  Keywords THz spectroscopy; nanocomposites, percolation threshold, time-domain spectroscopy, time-domain spectrometer, TDS  
  Abstract Polymer composites containing nanocarbon fillers are under intensive investigation worldwide due to their remarkable electromagnetic properties distinguished not only by components as such, but the distribution and interaction of the fillers inside the polymer matrix. The theory herein reveals that a particular effect connected with the homogeneity of a composite manifests itself in the terahertz range. Transmission time-domain terahertz spectroscopy was applied to the investigation of nanocomposites obtained by co-extrusion of PLA polymer with additions of graphene nanoplatelets and multi-walled carbon nanotubes. The THz peak of permittivity's imaginary part predicted by the applied model was experimentally shown for GNP-containing composites both below and above the percolation threshold. The physical nature of the peak was explained by the impact on filler particles excluded from the percolation network due to the peculiarities of filler distribution. Terahertz spectroscopy as a versatile instrument of filler distribution diagnostics is discussed.  
  Address Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu, Finland  
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  Series Volume Series Issue Edition  
  ISSN 2073-4360 ISBN Medium  
  Area Expedition Conference  
  Notes (down) PMID:33353036; PMCID:PMC7767186 Approved no  
  Call Number Serial 1780  
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Author Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. url  doi
openurl 
  Title Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation Type Journal Article
  Year 2020 Publication Sci. Rep. Abbreviated Journal Sci. Rep.  
  Volume 10 Issue 1 Pages 16819  
  Keywords VN HEB  
  Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.  
  Address National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2045-2322 ISBN Medium  
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  Notes (down) PMID:33033360; PMCID:PMC7546726 Approved no  
  Call Number Serial 1797  
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