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Author Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. url  doi
openurl 
  Title Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation Type Journal Article
  Year 2021 Publication (up) Adv. Electron. Mater. Abbreviated Journal Adv. Electron. Mater.  
  Volume 7 Issue 3 Pages 2000872  
  Keywords SWCNT transistors  
  Abstract The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2199-160X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1843  
Permanent link to this record
 

 
Author Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. url  doi
openurl 
  Title Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations Type Journal Article
  Year 2019 Publication (up) AIP Advances Abbreviated Journal AIP Advances  
  Volume 9 Issue 10 Pages 105220  
  Keywords GaAs/AlGaAs superlattice, SL, NbN HEB  
  Abstract Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2158-3226 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1274  
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Author Ren, Y.; Zhang, D. X.; Zhou, K. M.; Miao, W.; Zhang, W.; Shi, S. C.; Seleznev, V.; Pentin, I.; Vakhtomin, Y.; Smirnov, K. url  doi
openurl 
  Title 10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser Type Journal Article
  Year 2019 Publication (up) AIP Advances Abbreviated Journal AIP Advances  
  Volume 9 Issue 7 Pages 075307  
  Keywords NbN HEB mixers, QCL, IR  
  Abstract We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated.

The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy.
 
  Address  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2158-3226 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1293  
Permanent link to this record
 

 
Author Il'in, K.; Siegel, M.; Semenov, A.; Engel, A.; Hübers, H.-W.; Hollmann, E.; Gol'tsman, G.; Voronov, B. url  openurl
  Title Thickness dependence of superconducting properties of ultrathin Nb and NbN films Type Conference Article
  Year 2004 Publication (up) AKF-Frühjahrstagung Abbreviated Journal  
  Volume Issue Pages  
  Keywords Nb, NbN films, has potential plagiarism  
  Abstract  
  Address Berlin-Adlershof  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1503  
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Author Lang, P. T.; Leipold, I.; Knott, W. J.; Semenov, A. D.; Gol'tsman, G. N.; Renk, K. F. url  doi
openurl 
  Title New far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser Type Journal Article
  Year 1991 Publication (up) Appl. Phys. B Abbreviated Journal Appl. Phys. B  
  Volume 53 Issue 4 Pages 207-212  
  Keywords CO2 IR lasers, applications, CH3Cl, CH3Br  
  Abstract In this paper we report on the detection of new far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser. We found 80 new lines for CH3Cl and 9 new lines for CH3Br in the frequency region between 16 cm−1 and 41 cm−1, all due to stimulated Raman scattering. For the Raman gain regions bandwidths up to about 700 MHz were found. We also observed high intensity short far-infrared laser pulses of durations in the nanosecond regime.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0721-7269 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1678  
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