| Records |
| Author |
Beck, M.; Klammer, M.; Lang, S.; Leiderer, P.; Kabanov, V. V.; Gol’tsman, G. N.; Demsar, J. |
| Title |
Energy-gap dynamics of superconducting NbN thin films studied by time-resolved terahertz spectroscopy |
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Miscellaneous |
| Year |
2011 |
Publication |
arXiv |
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| Keywords |
NbN thin film, energy gap dynamics |
| Abstract |
Using time-domain Terahertz spectroscopy we performed direct studies of the photoinduced suppression and recovery of the superconducting gap in a conventional BCS superconductor NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the bare quasiparticle recombination rate, the Cooper pair-breaking rate and the electron-phonon coupling constant, \lambda = 1.1 +/- 0.1, which is in excellent agreement with theoretical estimates. |
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Duplicated as 641 |
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1388 |
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| Author |
Семенов, Александр Владимирович |
| Title |
Проскальзывание фазы, поглощение электромагнитного излучения и формирование отклика в детекторах на основе узких полосок сверхпроводников |
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Manuscript |
| Year |
2010 |
Publication |
М. МПГУ |
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SSPD, SNSPD, response |
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Ph.D. thesis |
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Russian |
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1150 |
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Samsonova, Alena; Zolotov, Philipp; Baeva, Elmira; Lomakin, Andrey; Titova, Nadezhda; Kardakova, Anna; Goltsman, Gregory |
| Title |
Signatures of surface magnetic disorder in thin niobium films |
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Journal Article |
| Year |
2021 |
Publication |
IEEE Trans. Appl. Supercond. |
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1-1 |
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Temperature measurement, Temperature dependence, Superconducting magnets, Superconducting transition temperature, Substrates, Resistance, Scattering |
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We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder (kFl 150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm-2, which is in agreement with the previously reported data for Nb films. |
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1051-8223 |
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1162 |
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Fedder, H.; Oesterwind, S.; Wick, M.; Olbrich, F.; Michler, P.; Veigel, T.; Berroth, M.; Schlagmüller, M. |
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Characterization of electro-optical devices with low jitter single photon detectors – towards an optical sampling oscilloscope beyond 100 GHz |
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Conference Article |
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2018 |
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ECOC |
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1-3 |
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SSPD, SNSPD, SPAD |
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We showcase an optical random sampling scope that exploits single photon counting and apply it to characterize optical transceivers. We study single photon detectors with a jitter down to 40 ps. The method can be extended beyond 100 GHz. |
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8535415 |
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1198 |
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Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. |
| Title |
Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method |
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Conference Article |
| Year |
2016 |
Publication |
Proc. 27th Int. Symp. Space Terahertz Technol. |
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30-32 |
| Keywords |
NbN HEB, GaN buffer layer |
| Abstract |
In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination. |
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1202 |
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