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Author Ryabchun, S.; Tong, C.-yu E.; Blundell, R.; Kimberk, R.; Gol’tsman, G.
Title Effect of microwave radiation on the stability of terahertz hot-electron bolometer mixers Type Conference Article
Year 2006 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 6373 Issue Pages 63730J (1 to 5)
Keywords NbN HEB mixers, hot-electron bolometer mixers, stability, Allan variance, LO power fluctuations
Abstract We report our studies of the effect of microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the NbN hot-electron bolometer (HEB) mixer incorporated into a THz heterodyne receiver. It is shown that exposing the HEB mixer to microwave radiation does not result in a significant rise of the receiver noise temperature and degradation of the mixer conversion gain so long as the level of microwave power is small compared to the local oscillator drive. Hence the injection of a small, but controlled amount of microwave radiation enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the stability of HEB mixer receivers.
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Corporate Author Thesis
Publisher SPIE Place of Publication Editor Anwar, M.; DeMaria, A.J.; Shur, M.S.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference (down) Terahertz Physics, Devices, and Systems
Notes Approved no
Call Number Serial 1441
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Author Zhang, W.; Li, N.; Jiang, L.; Ren, Y.; Yao, Q.-J.; Lin, Z.-H.; Shi, S.-C.; Voronov, B. M.; Gol’tsman, G. N.
Title Dependence of noise temperature of quasi-optical superconducting hot-electron bolometer mixers on bath temperature and optical-axis displacement Type Conference Article
Year 2008 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 6840 Issue Pages 684007 (1 to 8)
Keywords NbN HEB mixers, noise temperature, LO power
Abstract It is known that the increase of bath temperature results in the decrease of critical current of superconducting hot-electron bolometer (HEB) mixers owing to the depression of superconductivity, thus leading to the degradation of the mixer’s sensitivity. Here we report our study on the effect of bath temperature on the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers incorporated with a two-arm log-spiral antenna. The correlation between the bath temperature, critical current, LO power requirement and noise temperature is investigated at 0.5 THz. Furthermore, the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers is examined while there is an optical-axis displacement between the center of the extended hemispherical silicon lens and the superconducting NbN HEB device, which is placed on the back of the lens. Detailed experimental results and analysis are presented.
Address
Corporate Author Thesis
Publisher Spie Place of Publication Editor Zhang, C.; Zhang, X.-C.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference (down) Terahertz Photonics
Notes Approved no
Call Number Serial 1415
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Author Yngvesson, K. S.; Gerecht, E.; Musante, C. F.; Zhuang, Y.; Ji, M.; Goyette, T. M.; Dickinson, J. C.; Waldman, J.; Yagoubov, P. A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN Type Conference Article
Year 1999 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 3795 Issue Pages 357-368
Keywords NbN HEB mixers
Abstract We have developed prototype HEB receivers using thin film superconducting NbN devices deposited on silicon substrates. The devices are quasi-optically coupled through a silicon lens and a self-complementary log-specific toothed antenna. We measured DSB receiver noise temperatures of 500 K (13 X hf/2k) at 1.56 THz and 1,100 K (20 X hf/2k) at 2.24 THz. Noise temperatures are expected to fall further as devices and quasi-optical coupling methods are being optimized. The measured 3 dB IF conversion gain bandwidth for one device was 3 GHz, and it is estimated that the bandwidth over which the receiver noise temperature is within 3 dB of its minimum value is 6.5 GHz which is sufficient for a number of practical applications. We will discuss our latest results and give a detailed description of our prototype setup and experiments. We will also discuss our plans for developing focal plane arrays with tens of Hot Electron Bolometric mixer elements on a single silicon substrate which will make real time imaging systems in the THz region feasible.
Address
Corporate Author Thesis
Publisher SPIE Place of Publication Editor Hwu, R.J.; Wu, K.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference (down) Terahertz and Gigahertz Photonics
Notes Approved no
Call Number Serial 1561
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Author Xu, Y.; Zheng, X.; Williams, C.; Verevkin, A.; Sobolewski, R.; Chulkova, G.; Lipatov, A.; Okunev, O.; Smirnov, K.; Gol’tsman, G. N.
Title Ultrafast superconducting hot-electron single-photon detector Type Conference Article
Year 2001 Publication CLEO Abbreviated Journal CLEO
Volume Issue Pages 345
Keywords NbN SSPD, SNSPD
Abstract Summary form only given. The current most-pressing need is to develop a practical, GHz-range counting single-photon detector, operational at either 1.3-/spl mu/m or 1.55-/spl mu/m radiation wavelength, for novel quantum communication and quantum cryptography systems. The presented solution of the problem is to use an ultrafast hot-electron photodetector, based on superconducting thin-film microstructures. This type of device is very promising, due to the macroscopic quantum nature of superconductors. Very fast response time and the small, (meV range) value of the superconducting energy gap characterize the superconductor, leading to the efficient avalanche process even for infrared photons.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference (down) Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170)
Notes Approved no
Call Number Serial 1545
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Author Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films Type Conference Article
Year 1994 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 2160 Issue Pages 74-82
Keywords YBCO HTS switches
Abstract We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
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Corporate Author Thesis
Publisher SPIE Place of Publication Editor Buhrman, R.A.; Clarke, J.T.; Daly, K.; Koch, R.H.; Luine, J.A.; Simon, R.W.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference (down) Superconductive Devices and Circuits
Notes Approved no
Call Number Serial 1638
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