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Blundell, R.; Kawamura, J. H.; Tong, C. E.; Papa, D. C.; Hunter, T. R.; Gol’tsman, G. N.; Cherednichenko, S. I.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range |
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Conference Article |
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Year |
1998 |
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Proc. 6-th Int. Conf. Terahertz Electron. |
Abbreviated Journal |
Proc. 6-th Int. Conf. Terahertz Electron. |
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18-20 |
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NbN HEB mixers |
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Abstract |
We describe a heterodyne receiver designed to operate in the partially transparent atmospheric windows centered on 680 and 830 GHz. The receiver incorporates a niobium nitride thin film, cooled to 4.2 K, as the phonon-cooled hot-electron mixer element. The double sideband receiver noise, measured over the frequency range 680-830 GHz, is typically 700-1300 K. The instantaneous output bandwidth of the receiver is 600 MHz. This receiver has recently been used at the SubMillimeter Telescope, jointly operated by the Steward Observatory and the Max Planck Institute for Radioastronomy, for observations of the neutral carbon and CO spectral lines at 810 GHz and at 806 and 691 GHz respectively. Laboratory measurements on a second mixer in the same test receiver have yielded extended high frequency performance to 1 THz. |
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Leeds, UK |
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IEEE |
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0-7803-4903-2 |
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IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) |
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1581 |
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Korneev, A.; Semenov, A.; Vodolazov, D.; Gol’tsman, G. N.; Sobolewski, R. |
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Title |
Physics and operation of superconducting single-photon devices |
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2017 |
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Superconductors at the Nanoscale |
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279-308 |
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De Gruyter |
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Wördenweber, R.; Moshchalkov, V.; Bending, S.; Tafuri, F. |
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1326 |
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Gershenzon, E. M.; Goltsman, G. N. |
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Title |
Zeeman effect in excited-states of donors in germanium |
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1972 |
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Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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6 |
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3 |
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509 |
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Ge, donors, Zeeman effect |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1737 |
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Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
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Investigation of excited donor states in GaAs |
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Journal Article |
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1974 |
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Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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7 |
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10 |
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1248-1250 |
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GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Sobolewski, Roman; Xu, Ying; Zheng, Xuemei; Williams, Carlo; Zhang, Jin; Verevkin, Aleksandr; Chulkova, Galina; Korneev, Alexander; Lipatov, Andrey; Okunev, Oleg; Smirnov, Konstantin; Gol'tsman, Gregory N. |
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Spectral sensitivity of the NbN single-photon superconducting detector |
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2002 |
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IEICE Trans. Electron. |
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IEICE Trans. Electron. |
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E85-C |
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3 |
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797-802 |
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NbN SSPD, SNSPD |
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We report our studies on the spectral sensitivity of superconducting NbN thin-film single-photon detectors (SPD's) capable of GHz counting rates of visible and near-infrared photons. In particular, it has been shown that a NbN SPD is sensitive to 1.55-µm wavelength radiation and can be used for quantum communication. Our SPD's exhibit experimentally measured intrinsic quantum efficiencies from 20% at 800 nm up to 1% at 1.55-µm wavelength. The devices demonstrate picosecond response time (<100 ps, limited by our readout system) and negligibly low dark counts. Spectral dependencies of photon counting of continuous-wave, 0.4-µm to 3.5-µm radiation, and 0.63-µm, 1.33-µm, and 1.55-µm laser-pulsed radiations are presented for the single-stripe-type and meander-type devices. |
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