| Records |
| Author |
Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Heating of quasiparticles in a superconducting film in the resistive state |
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Journal Article |
Year  |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
34 |
Issue |
5 |
Pages |
268-271 |
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1716 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
| Title |
Cross section for binding of free carriers into excitons in germanium |
Type |
Journal Article |
| Year |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
33 |
Issue |
11 |
Pages |
574 |
| Keywords |
Ge, excitons, photoconductivity |
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1718 |
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Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
| Title |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
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Journal Article |
| Year |
1982 |
Publication |
Optics and Spectroscopy |
Abbreviated Journal |
Optics and Spectroscopy |
| Volume |
52 |
Issue |
4 |
Pages |
454-455 |
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Ge, exciton photoconduction |
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1715 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
Type |
Journal Article |
| Year |
1982 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
36 |
Issue |
7 |
Pages |
296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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1717 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
| Title |
Kinetics of electron and hole binding into excitons in germanium |
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Journal Article |
| Year |
1983 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
57 |
Issue |
2 |
Pages |
369-376 |
| Keywords |
Ge, electron and hole binding |
| Abstract |
The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
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1711 |
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