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Author |
Kuzin, Aleksei; Elmanov, Ilia; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
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Title |
Silicon nitride focusing grating coupler for input and output light of NV-centers |
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Conference Article |
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Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
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Pages |
349-353 |
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Keywords |
NV-centers, focusing grating coupler |
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Abstract |
Here we presented the numerical results for the calculation of focusing grating coupler efficiency in the visible wavelength range. Using the finite element method, the optimal geometric parameters, including filling factor and grating period for a central wavelength of 637 nm, were found. Obtained results allow to input/output single-photon radiation from NV-centers, and can be used for research and development of a scalable on-chip quantum optical computing. |
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2724-0029 |
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978-88-85741-44-7 |
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32nd European Modeling & Simulation Symposium |
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1841 |
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Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
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Title |
Integrated contra-directional coupler for NV-centers photon filtering |
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Conference Article |
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Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
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Pages |
354-360 |
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Keywords |
NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings |
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Abstract |
We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds. |
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2724-0029 |
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978-88-85741-44-7 |
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32nd European Modeling & Simulation Symposium |
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1839 |
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Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
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Title |
Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds |
Type |
Conference Article |
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Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
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Pages |
344-348 |
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Abstract |
The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength. |
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NV-centers, nanodiamonds |
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2724-0029 |
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978-88-85741-44-7 |
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32nd European Modeling & Simulation Symposium |
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no |
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1840 |
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Author |
Moshkova, M. A.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
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Title |
High-efficiency multi-element superconducting single-photon detector |
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Conference Article |
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Year |
2021 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
11771 |
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Pages |
2-8 |
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Keywords |
PNR SSPD, large active area, detection efficiency |
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Abstract |
We present the result of the creation and investigation of the multi-element superconducting single photon detectors, which can recognize the number of photons (up to six) in a short pulse of the radiation at telecommunication wavelengths range. The best receivers coupled with single-mode fiber have the system quantum efficiency of ⁓85%. The receivers have a 100 ps time resolution and a few nanoseconds dead time that allows them to operate at megahertz counting rate. Implementation of the multi-element architecture for creation of the superconducting single photon detectors with increased sensitive area allows to create the high efficiency receivers coupled with multi-mode fibers and with preserving of the all advantages of superconducting photon counters. |
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SPIE |
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Prochazka, I.; Štefaňák, M.; Sobolewski, R.; Gábris, A. |
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Quantum Optics and Photon Counting |
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1795 |
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Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
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Title |
Influence of deposited material energy on superconducting properties of the WSi films |
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Conference Article |
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Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
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Volume |
781 |
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Pages |
012013 (1 to 6) |
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Keywords |
WSi SSPD, SNSPD |
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Abstract |
WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. |
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1757-899X |
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Call Number |
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Serial |
1798 |
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