| Records |
Author  |
Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. |
| Title |
Energy-loss rates for hot electrons and holes in GaAs quantum wells |
Type |
Journal Article |
| Year |
1985 |
Publication |
Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
| Volume |
54 |
Issue |
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Pages |
2045-2048 |
| Keywords |
2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
| Abstract |
We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening. |
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633 |
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| Author |
Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. |
| Title |
Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes |
Type |
Journal Article |
| Year |
1985 |
Publication |
Phys. B+C |
Abbreviated Journal |
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| Volume |
134 |
Issue |
1-3 |
Pages |
174-178 |
| Keywords |
2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
| Abstract |
The first direct and separate determination of the hot electron and hot hole energy loss rates to the lattice shows unexpectedly large differences between electrons and holes in GaAs quantum wells. This large difference results from an anomalously low electron energy loss rate, which we attribute to the presence of non-equilibrium optical phonon rather than the effects of reduced dimensionality or dynamic screening. A model calculation of hot phonon effects is presented. |
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634 |
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| Author |
Uchiki, Hisao; Kobayashi, Takayoshi; Sakaki, Hiroyuki |
| Title |
Photoluminescence and energyâ€loss rates in GaAs quantum wells under highâ€density excitation |
Type |
Journal Article |
| Year |
1987 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
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| Volume |
62 |
Issue |
3 |
Pages |
1010-1016 |
| Keywords |
2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
| Abstract |
The timeâ€resolved luminescence spectra from excited conduction subbands in three samples of multiâ€quantumâ€well GaAs/AlxGa1-xAs (x=0.3 and 1) semiconductors with several well widths and barrier heights were obtained under highâ€density excitations by a 30â€ps pulsed laser at 532 nm, which generated electron–hole pairs to the concentration of 1010–1013/cm2 per well per pulse at 77 K. The temperature and the Fermi energy of electron were determined by fitting best the constructed timeâ€resolved spectrum to the observed, and the timeâ€dependent electron energy was obtained by using these parameters. The energyâ€loss rates of hot electrons are at least twice smaller than the calculated ones induced by the electronâ€polar phonon scattering, including the screening effect due to the high carrier density. |
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