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Author Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G.
Title Towards to the development of THz detectors based on carbon nanostructures Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal (up) J. Phys.: Conf. Ser.
Volume 1092 Issue Pages 012039 (1 to 4)
Keywords CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors
Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
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ISSN 1742-6588 ISBN Medium
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Call Number Serial 1302
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.
Title Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum Type Journal Article
Year 1987 Publication JETP Lett. Abbreviated Journal (up) JETP Lett.
Volume 46 Issue 5 Pages 237-238
Keywords YBCO HTS detectors
Abstract For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6.
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Call Number Serial 1703
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Author Heeres, R.W.; Dorenbos, S.N.; Koene, B.; Solomon, G.S.; Kouwenhoven, L.P.; Zwiller, V.
Title On-Chip Single Plasmon Detection Type Journal Article
Year 2010 Publication Nano Letters Abbreviated Journal (up) Nano Lett.
Volume 10 Issue Pages 661-664
Keywords optical antennas; SSPD; Single surface plasmons; superconducting detectors; semiconductor quantum dots; nanophotonics
Abstract Surface plasmon polaritons (plasmons) have the potential to interface electronic and optical devices. They could prove extremely useful for integrated quantum information processing. Here we demonstrate on-chip electrical detection of single plasmons propagating along gold waveguides. The plasmons are excited using the single-photon emission of an optically emitting quantum dot. After propagating for several micrometers, the plasmons are coupled to a superconducting detector in the near-field. Correlation measurements prove that single plasmons are being detected.
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Call Number RPLAB @ akorneev @ Serial 620
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Author Mitin, Vladimir; Antipov, Andrei; Sergeev, Andrei; Vagidov, Nizami; Eason, David; Strasser, Gottfried
Title Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers Type Journal Article
Year 2011 Publication Nanoscale Research Letters Abbreviated Journal (up) Nanoscale res lett
Volume 6 Issue 1 Pages 6
Keywords Quantum dots; Infrared detectors; Photoresponse; Doping; Potential barriers; Capture processes
Abstract Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV.
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Call Number RPLAB @ gujma @ Serial 712
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Author Ferrari, S.; Kovalyuk, V.; Hartmann, W.; Vetter, A.; Kahl, O.; Lee, C.; Korneev, A.; Rockstuhl, C.; Gol'tsman, G.; Pernice, W.
Title Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors Type Journal Article
Year 2017 Publication Opt. Express Abbreviated Journal (up) Opt. Express
Volume 25 Issue 8 Pages 8739-8750
Keywords SSPD, SNSPD, photon counting; Infrared; Quantum detectors; Integrated optics; Multiphoton processes; Photon statistics
Abstract We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions.
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Call Number RPLAB @ kovalyuk @ Serial 1118
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