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Author Khosropanah, P.; Merkel, H.; Yngvesson, S.; Adam, A.; Cherednichenko, S.; Kollberg, E.
Title A distributed device model for phonon-cooled HEB mixers predicting IV characteristics, gain, noise and IF bandwidth Type Conference Article
Year 2000 Publication Proc. 11th Int. Symp. Space Terahertz Technol. Abbreviated Journal (up)
Volume Issue Pages 474-488
Keywords HEB mixer numerical model, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model
Abstract A distributed model for phonon-cooled superconductor hot electron bolometer (HEB) mixers is given, which is based on solving the one-dimensional heat balance equation for the electron temperature profile along the superconductor strip. In this model it is assumed that the LO power is absorbed uniformly along the bridge but the DC power absorption depends on the local resistivity and is thus not uniform. The electron temperature dependence of the resistivity is assumed to be continuous and has a Fermi form. These assumptions are used in setting up the non-linear heat balance equation, which is solved numerically for the electron temperature profile along the bolometer strip. Based on this profile the resistance of the device and the IV curves are calculated. The IV curves are in excellent agreement with measurement results. Using a small signal model the conversion gain of the mixer is obtained. The expressions for Johnson noise and thermal fluctuation noise are derived. The calculated results are in close agreement with measurements, provided that one of the parameters used is adjusted.
Address
Corporate Author Thesis
Publisher Place of Publication University of Michigan, Ann Arbor, MI USA Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 893
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Author Ynvesson, K. Sigfrid; Kollberg, Erik L.
Title Optimum receiver noise temperature for NbN HEB mixers according to standard model Type Conference Article
Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal (up)
Volume Issue Pages 566-582
Keywords HEB mixer model, standard model, electro-thermal feedback, self-heating parameter, heating efficiency
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 895
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Author Khosropanah, Pourya
Title NbN and NbTiN hot electron bolometer THz mixers Type Book Whole
Year 2003 Publication Chalmers University of Technology Abbreviated Journal (up)
Volume Issue Pages
Keywords HEB mixer, hot electron bolometer mixer, NbN, NbTiN, superconducting detector, heterodyne receiver, THz mixer, submillimeter mixer, quasioptical receiver, double slot antenna, twin slot antenna, spiral antenna, receiver noise, FTS, Fourier Transform Spectrometer
Abstract The thesis reports the development of Hot Electron Bolometer (HEB) mixers for radio astronomy heterodyne receivers in THz frequency range. Part of this work is the fabrication of HEB devices, which are based on NbN or NbTiN superconducting thin films (â‰<a4>5 nm). They are integrated with wideband spiral or double-slot planar antennas. The mixer chips are incorporated into a quasi-optical receiver. The experimental part of this work focuses on the characterization of the receiver as a whole, and the HEB mixers as a part. Double side band receiver noise temperature and the IF bandwidth are reported for frequencies from 0.7 THz up to 2.6 THz. The spectrum of the direct response of HEB integrated with dierent antennas are measured using Fourier Transform Spectrometer (FTS). The effect of the bolometer size on total receiver performance and the LO power requirements is also discussed. A high-yield and reliable process for fabrication of NbN HEB mixers have been achieved. Over 100 devices with different bolometer geometry, film property and also different antennas have been fabricated and measured. The measured data enables us to discuss the impact of different parameters to the receiver overall performance.

This work has provided NbN HEB mixers to the following receivers:

TREND (Terahertz REceiver with NbN HEB Device) operating at 1.25-1.5 THz, installed in AST/RO Submillimeter Wave Telescope, Amundsen/Scott South Pole Station, in 2002-2003.

Band 6-low (1.410-1.700 THz) and 6-high (1.700-1.920 THz) of the HIFI (Heterodyne Instrument for Far Infra-red) in the Herschel Space Observatory, due to launch in 2007 by ESA (European Space Agency).

Besides, there has been continuous efforts to develop better models to explain the mixer performance more accurately. They are based on two temperature model for electrons and phonons and solving one-dimensional heat balance equations along the bolometer. The principles of these models are illustrated and the calculated results are compared with measured data.
Address
Corporate Author Thesis Ph.D. thesis
Publisher Chalmers University of Technology Place of Publication Göteborg Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 910
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Author Skalare, A.; McGrath, William R.; Echternach, P. M.; Leduc, H. G.; Siddiqi, I.; Verevkin, A.; Prober, D. E.
Title Aluminum hot-electron bolometer mixers at submillimeter wavelengths Type Journal Article
Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal (up)
Volume 11 Issue 1 Pages 641-644
Keywords Al HEB mixer, contacts, interface, in situ, in-situ, Aluminium HEB mixer
Abstract Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz-frequency spectroscopy within astrophysics. Al HEB mixers offer operation with an order of magnitude less local oscillator power, higher intermediate frequency bandwidth and potentially lower noise than competing devices made from other materials. We report on mixer experiments at 618 GHz with devices fabricated from films with sheet resistances in the range from about 55 Ω down to about 9 Ω per square. Intermediate frequency bandwidths of up to 3 GHz were measured (1 μm long device), with absorbed local oscillator power levels of 0.5 to 6 nW and mixer conversion up to -21.5 dB. High input coupling efficiency implies that the electrons in the device are able to thermalize before escaping from the device. It was found that the long coherence length complicates mixer operations due to the proximity of the contact pads. Also, saturation at the IF frequency may be a concern for this type of device, and warrants further studies.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number ref919426b Serial 1061
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Author Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E.
Title Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers Type Conference Article
Year 1997 Publication Proc. 27th Eur. Microwave Conf. Abbreviated Journal (up)
Volume 2 Issue Pages 972-977
Keywords HEB mixer, fabrication process
Abstract The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
Address Jerusalem, Israel
Corporate Author Thesis
Publisher IEEE Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference 27th Eur. Microwave Conf.
Notes Approved no
Call Number Serial 1075
Permanent link to this record