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Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D. |
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Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state |
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1990 |
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Sov. Supercond. |
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Sov. Supercond. |
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3 |
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10 |
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1582-1597 |
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HEB mixers |
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240 |
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Hans Ekstrom; Karasik, Boris S.; Kollberg, Erik L.; Sigfrid Yngvesson |
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Title |
Conversion gain and noise of niobium superconducting hot–electron–mixers |
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1995 |
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IEEE Trans. Appl. Supercond. |
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43 |
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4 |
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938-947 |
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Nb HEB mixers |
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254 |
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Gol'tsman, G. N.; Karasik, B. S.; Okunev, O. V.; Dzardanov, A. L.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E. |
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Title |
NbN hot electron superconducting mixers for 100 GHz operation |
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1995 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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Volume |
5 |
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2 |
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3065-3068 |
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NbN HEB mixers |
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NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K. |
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1051-8223 |
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About LO power required |
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255 |
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Karasik, B. S.; Elantiev, A. I. |
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Analysis of the noise performance of a hot-electron superconducting bolometer mixer |
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1995 |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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229-246 |
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HEB mixers |
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A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done. |
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Pasadena, Ca |
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258 |
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Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
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The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
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Conference Article |
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1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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290-302 |
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Keywords |
NbN HEB mixers, fabrication process |
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We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Charlottesville, Virginia, USA |
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266 |
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