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| Author | Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman | ||||
| Title | Characterization of the electron energy relaxation process in NbN hot-electron devices | Type | Conference Article | ||
| Year | 1999 | Publication | Proc. 10th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 10th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 390-397 | ||
| Keywords | HEB mixers, SSPD, SNSPD, NbN films, Nb films | ||||
| Abstract | We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1576 | |||
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