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Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. |
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Title |
Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz |
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Journal Article |
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Year |
2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
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Volume |
9 |
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4 |
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242-245 |
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Keywords |
NbN HEB mixers |
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1069-1227 |
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1550 |
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Author |
Kroug, M.; Yagoubov, P.; Gol'tsman, G.; Kollberg, E. |
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Title |
NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies |
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Conference Article |
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Year |
1997 |
Publication |
Inst. Phys. Conf. Ser. |
Abbreviated Journal |
Inst. Phys. Conf. Ser. |
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1 |
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Pages |
405-408 |
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Keywords |
NbN HEB mixers |
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Veldhoven |
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Bristol |
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0951-3248 |
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3rd Eur. Conf. on Applied Superconductivity |
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1600 |
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Svechnikov, S. I.; Antipov, S. V.; Vakhtomin, Y. B.; Goltsman, G. N.; Gershenzon, E. M.; Cherednichenko, S. I.; Kroug, M.; Kollberg, E. |
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Title |
Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers |
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Journal Article |
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Year |
2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
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Volume |
9 |
Issue |
3 |
Pages |
205-210 |
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Keywords |
NbN HEB mixers |
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1069-1227 |
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1551 |
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Hübers, H.-W.; Semenov, A.; Richter, H.; Birk, Manfred; Krocka, Michael; Mair, Ulrich; Smirnov, K.; Gol'tsman, G.; Voronov, B. |
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Title |
Terahertz heterodyne receiver with a hot-electron bolometer mixer |
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Conference Article |
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2002 |
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Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop |
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Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop |
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Keywords |
NbN HEB mixers |
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Abstract |
During the past decade major advances have been made regarding low noise mixers for terahertz (THz) heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a µW power from the local oscillator (LO). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, are of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated the performance of the receiver. This yields important information for the development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA)[1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR. |
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Monterey, CA, USA |
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Wold, J.; Davidson, J. |
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4 pages; Unconfirmed but cited in https://kups.ub.uni-koeln.de/1622/1/bedorf.pdf; There is a Program of the Workshop: https://www.yumpu.com/en/document/view/7411055/far-ir-submm-mm-detector-technology-workshop-sofia-usra (there is no title of this article in the Program); There is also identical publication in Proc. ISSTT (Serial: 332, “A broadband terahertz heterodyne receiver with an NbN HEB mixer”). |
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1829 |
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Author |
Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. |
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Title |
Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method |
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Conference Article |
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2016 |
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Proc. 27th Int. Symp. Space Terahertz Technol. |
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30-32 |
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Keywords |
NbN HEB, GaN buffer layer |
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In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination. |
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1202 |
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