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Author Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Goltsman, G. N.
Title Fabrication and characterisation of NbN HEB mixers with in situ gold contacts Type (up) Conference Article
Year 2008 Publication Proc. 19th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 19th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 62-67
Keywords HEB, mixer, NbN, in-situ contacts
Abstract We present our recent results of the fabrication and testing of NbN hot-electron bolometer mixers with in situ gold contacts. An intermediate frequency bandwidth of about 6 GHz has been measured for the mixers made of a 3.5-nm NbN film on a plane Si substrate with in situ gold contacts, compared to 3.5 GHz for devices made of the same film with ex situ gold contacts. The increase in the intermediate frequency bandwidth is attributed to additional diffusion cooling through the improved contacts, which is further supported by the its dependence on the bridge length: intermediate frequency bandwidths of 3.5 GHz and 6 GHz have been measured for devices with lengths of 0.35 μm and 0.16 μm respectively at a local oscillator frequency of 300 GHz near the superconducting transition. At a local oscillator frequency of 2.5 THz the receiver has offered a DSB noise temperature of 950 K. When compared to the previous result of 1300 K obtained at the same local oscillator frequency for devices fabricated with an ex situ route, such a low value of the noise temperature may also be attributed to the improved gold contacts.
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Corporate Author Thesis
Publisher Place of Publication Groningen, Netherlands Editor
Language Summary Language Original Title
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Notes Approved no
Call Number Serial 412
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Author Cherednichenko, S.; Kollberg, E.; Angelov, I.; Drakinskiy, V.; Berg, T.; Merkel, H.
Title Effect of the direct detection effect on the HEB receiver sensitivity calibration Type (up) Conference Article
Year 2005 Publication Proc. 16th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 235-239
Keywords HEB, mixer, direct detection effect
Abstract We analyze the scale of the HEB receiver sensitivity calibration error caused by the so called “direct detection effect”. The effect comes from changing of the HEB parameters when whey face the calibration loads of different temperatures. We found that for HIFI Band 6 mixers (Herschel Space Observatory) the noise temperature error is of the order of 8% for 300K/77K loads (lab receiver) and 2.5% for 100K/10K loads (in HIFI). Using different approach we also predict that with an isolator between the mixer and the low noise amplifiers the error can be much smaller.
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Corporate Author Thesis
Publisher Place of Publication Göteborg, Sweden Editor
Language Summary Language Original Title
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Notes Approved no
Call Number Serial 360
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Author Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J. M.; Delorme, Y.; Feret, A.; Hübers, H. W.; Semenov, A. D.; Gol'tsman, G. N.
Title 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers Type (up) Conference Article
Year 2006 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 6275 Issue Pages 62750I (1 to 11)
Keywords HEB, mixer, membrane
Abstract A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation.
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Notes Approved no
Call Number Serial 561
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Author Kawamura, Jonathan; Blundell, Raymond; Tong, C.-Y. Edward; Papa, D. Cosmo; Hunter, Todd R.; Gol'tsman, Gregory; Cherednichenko, Sergei; Voronov, Boris; Gershenzon, Eugene
Title First light with an 800 GHz phonon-cooled HEB mixer receiver Type (up) Conference Article
Year 1998 Publication Proc. 9th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 9th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 35-43
Keywords HEB, mixer, LO power, local oscillator power, saturation effect, dynamic range
Abstract Phonon-cooled superconductive hot-electron bolometric (HEB) mixers are incorporated in a waveguide receiver designed to operate near 800 Gliz. The mixer elements are thin-film nio- bium nitride microbridges with dimensions of 4 nm thickness, 0.2 to 0.3 p.m in length and 2 jun in width. At 780 GHz the best receiver noise temperature is 840 K (DSB). The mixer IF bandwidth is 2.0 GHz, the absorbed LO power is —0.1 1.1W. A fixed-tuned version of the re- ceiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, Arizona, to conduct astronomical observations. These observations represent the first time that a receiver incorporating any superconducting HEB mixer has been used to detect a spectral line of celes- tial origin.
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Corporate Author Thesis
Publisher Place of Publication Pasadena, California, USA Editor
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Notes Approved no
Call Number Serial 572
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Author Cao, Aiqin; Jiang, L.; Chen, S.H.; Antipov, S.V.; Shi, S.C.
Title IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer Type (up) Conference Article
Year 2007 Publication Proc. International conference on microwave and millimeter wave technology Abbreviated Journal Proc. ICMMT
Volume Issue Pages 1-3
Keywords HEB, mixer, gain bandwidth
Abstract In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases.
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Corporate Author Thesis
Publisher Place of Publication Builin Editor
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Notes Approved no
Call Number RPLAB @ lobanovyury @ Serial 575
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