| Records |
| Author |
Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G. |
| Title |
Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers |
Type |
Abstract |
| Year |
2006 |
Publication |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 17th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
81 |
| Keywords |
NbN HEB mixers |
| Abstract |
We present a detailed experimental study of the direct detection effect in a small volume (0.15pm x lpm) NbN hot electron bolometer mixer. It is a quasioptical mixer with a twin slot antenna designed for 700 GHz and the measurement was done at a LO frequency of 670 GHz. The direct detection effect is characterized by a change in the mixer bias current when switching broadband radiation from a 300 K hot load to a 77 K cold load in a standard Y factor measurement. The result is, depending on the receiver under study, an increase or decrease in the receiver noise temperature. We find that the small signal noise temperature, which is the noise temperature that would be observed without the presence of the direct detection effect, and thus the one that is relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 K and 77 K calibration loads. Thus, in our case the direct detection effect reduces the mixer sensitivity. These results are in good agreement with previous measurement at THz frequencies [1]. Other experiments report an increase in mixer sensitivity [2]. To analyze this discrepancy we have designed a separate set of experiments to find out the physical origin of the direct detection effect. Possible candidates are the bias current dependence of the mixer gain and the bias current dependence of the IF match. We measured directly the change in mixer IF match and receiver gain due to the direct detection effect. From these measurements we conclude that the direct detection effect is caused by a combination of bias current reduction when switching form the 77 K to the 300 K load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. We also find that an increase in receiver sensitivity due to the direct detection effect is only possible if the noise temperature change due to the direct detection is dominated by the mixer-amplifier IF match. [1] J.J.A. Baselmans, A. Baryshev, S.F. Reker, M. Hajenius, J.R. Gao, T.M. Klapwijk, Yu.Vachtomin, S. Maslennikov, S. Antipov, B. Voronov, and G. Gol'tsman., Appl. Phys. Lett. 86, 163503 (2005). [2] S. Svechnokov, A. Verevkin, B. Voronov, E. Menschikov. E. Gershenzon, G. Gol'tsman, 9th Int. Symp. On Space THz. Techn., 45, (1999). |
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1437 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. |
| Title |
Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? |
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Conference Article |
| Year |
2006 |
Publication |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 17th Int. Symp. Space Terahertz Technol. |
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Pages |
187-189 |
| Keywords |
NbN HEB mixers |
| Abstract |
We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). |
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1439 |
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Gol'tsman, G.; Maslennikov, S.; Finkel, M.; Antipov, S.; Kaurova, N.; Grishina, E.; Polyakov, S.; Vachtomin, Y.; Svechnikov, S.; Smirnov, K.; Voronov, B. |
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Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer |
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Conference Article |
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2006 |
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Proc. MRS |
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Proc. MRS |
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935 |
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210 (1 to 6) |
| Keywords |
NbN HEB mixers |
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Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz. |
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0272-9172 |
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1440 |
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Ryabchun, S.; Tong, C.-yu E.; Blundell, R.; Kimberk, R.; Gol’tsman, G. |
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Effect of microwave radiation on the stability of terahertz hot-electron bolometer mixers |
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Conference Article |
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2006 |
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Proc. SPIE |
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Proc. SPIE |
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6373 |
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Pages |
63730J (1 to 5) |
| Keywords |
NbN HEB mixers, hot-electron bolometer mixers, stability, Allan variance, LO power fluctuations |
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We report our studies of the effect of microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the NbN hot-electron bolometer (HEB) mixer incorporated into a THz heterodyne receiver. It is shown that exposing the HEB mixer to microwave radiation does not result in a significant rise of the receiver noise temperature and degradation of the mixer conversion gain so long as the level of microwave power is small compared to the local oscillator drive. Hence the injection of a small, but controlled amount of microwave radiation enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the stability of HEB mixer receivers. |
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SPIE |
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Anwar, M.; DeMaria, A.J.; Shur, M.S. |
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Terahertz Physics, Devices, and Systems |
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1441 |
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Baselmans, J. J. A.; Baryshev, A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. |
| Title |
Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers |
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Journal Article |
| Year |
2006 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
100 |
Issue |
8 |
Pages |
084510 (1 to 7) |
| Keywords |
NbN HEB mixers |
| Abstract |
We present a detailed experimental study of the direct detection effect in a small volume (0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electron bolometer mixer at 673GHz. We find that the small signal noise temperature, relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 and 77K calibration loads. In a separate set of experiments we show that the direct detection effect is caused by a combination of bias current reduction when switching from the 77 to the 300K
load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. |
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0021-8979 |
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