| Records |
| Author |
Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E. |
| Title |
Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies |
Type |
Journal Article |
| Year |
2001 |
Publication  |
Infrared Physics & Technology |
Abbreviated Journal |
Infrared Physics & Technology |
| Volume |
42 |
Issue |
1 |
Pages |
41-47 |
| Keywords |
NbN HEB mixers, anti-reflection coating |
| Abstract |
Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz. |
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1350-4495 |
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1548 |
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| Author |
Gol'tsman, G. N. |
| Title |
Hot electron bolometric mixers: new terahertz technology |
Type |
Journal Article |
| Year |
1999 |
Publication |
Infrared Physics & Technology |
Abbreviated Journal |
Infrared Physics & Technology |
| Volume |
40 |
Issue |
3 |
Pages |
199-206 |
| Keywords |
NbN HEB mixers |
| Abstract |
This paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixers has crossed the level of 1 K GHz−1 at 430 GHz (410 K), 600–650 GHz (480 K), 750 GHz (600 K), 810 GHz (780 K) and is close to that level at 1.1 THz (1250 K) and 2.5 THz (4500 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and about 100 nW for mixers made by e-beam lithography. A waveguide version of 800 GHz receiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, AZ, to conduct astronomical observations of known submillimeter lines (CO, J=7→6, CI, J=2→1). It was proved that the receiver works as a practical instrument. |
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1350-4495 |
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no |
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1570 |
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| Author |
Schubert, J.; Semenov, A.; Hübers, H.-W.; Gol'tsman, G.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
| Title |
Broad-band terahertz NbN hot-electron bolometric mixer |
Type |
Conference Article |
| Year |
1999 |
Publication |
Inst. Phys. Conf. |
Abbreviated Journal |
Inst. Phys. Conf. |
| Volume |
167 |
Issue |
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Pages |
663-666 |
| Keywords |
NbN HEB mixers |
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4th Europ. Conf. on Appl. Superconductivity, Barcelona, Spain, 14-17 September 1999 |
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1578 |
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| Author |
Kroug, M.; Yagoubov, P.; Gol'tsman, G.; Kollberg, E. |
| Title |
NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies |
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Conference Article |
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1997 |
Publication |
Inst. Phys. Conf. Ser. |
Abbreviated Journal |
Inst. Phys. Conf. Ser. |
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1 |
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Pages |
405-408 |
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NbN HEB mixers |
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Veldhoven |
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Bristol |
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0951-3248 |
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3rd Eur. Conf. on Applied Superconductivity |
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1600 |
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Chen, J.; Kang, L.; Jin, B. B.; Xu, W. W.; Wu, P. H.; Zhang, W.; Jiang, L.; Li, N.; Shi, S. C.; Gol'tsman, G. N. |
| Title |
Properties of terahertz superconducting hot electron bolometer mixers |
Type |
Journal Article |
| Year |
2008 |
Publication |
Int. J. Terahertz Sci. Technol. |
Abbreviated Journal |
Int. J. Terahertz Sci. Technol. |
| Volume |
1 |
Issue |
1 |
Pages |
37-41 |
| Keywords |
NbN HEB mixers, noise temperature |
| Abstract |
A quasi-optical superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixer has been fabricated and measured in the terahertz (THz) frequency range of 0.5~2.52 THz. A receiver noise temperature of 2000 K at 2.52 THz has been obtained for the mixer without corrections. Also, the effect of a Parylene C anti-reflection (AR) coating on the silicon (Si) lens has been studied. |
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1417 |
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