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Author Sclafani, M.; Marksteiner, M.; Keir, F. M. L.; Divochiy, A.; Korneev, A.; Semenov, A.; Gol'tsman, G.; Arndt, M. url  doi
openurl 
  Title Sensitivity of a superconducting nanowire detector for single ions at low energy Type Journal Article
  Year 2012 Publication Nanotechnol. Abbreviated Journal Nanotechnol.  
  Volume 23 Issue 6 Pages 065501 (1 to 5)  
  Keywords NbN SSPD, SNSPD, superconducting single ion detector, SSID, SNSID  
  Abstract We report on the characterization of a superconducting nanowire detector for ions at low kinetic energies. We measure the absolute single-particle detection efficiency eta and trace its increase with energy up to eta = 100%. We discuss the influence of noble gas adsorbates on the cryogenic surface and analyze their relevance for the detection of slow massive particles. We apply a recent model for the hot-spot formation to the incidence of atomic ions at energies between 0.2 and 1 keV. We suggest how the differences observed for photons and atoms or molecules can be related to the surface condition of the detector and we propose that the restoration of proper surface conditions may open a new avenue for SSPD-based optical spectroscopy on molecules and nanoparticles.  
  Address Vienna Center for Quantum Science and Technology, Faculty of Physics, University of Vienna, Vienna, Austria  
  Corporate Author Thesis  
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  Language English Summary Language Original Title  
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  ISSN (up) 0957-4484 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:22248823 Approved no  
  Call Number Serial 1380  
Permanent link to this record
 

 
Author Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N. url  doi
openurl 
  Title Picosecond response of a superconducting hot-electron NbN photodetector Type Journal Article
  Year 1998 Publication Appl. Supercond. Abbreviated Journal Appl. Supercond.  
  Volume 6 Issue 7-9 Pages 423-428  
  Keywords NbN SSPD, SNSPD  
  Abstract The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W.  
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  ISSN (up) 0964-1807 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1584  
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Author Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. url  doi
openurl 
  Title Ultrafast superconducting single-photon optical detectors and their applications Type Journal Article
  Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 13 Issue 2 Pages 1151-1157  
  Keywords NbN SSPD, SNSPD  
  Abstract We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications.  
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  ISSN (up) 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 509  
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Author Schuck, C.; Pernice, W. H. P.; Minaeva, O.; Li, Mo; Gol'tsman, G.; Sergienko, A. V.; Tang, H. X. url  doi
openurl 
  Title Matrix of integrated superconducting single-photon detectors with high timing resolution Type Journal Article
  Year 2013 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 23 Issue 3 Pages 2201007-2201007  
  Keywords NbN SSPD, SNSPD, array, matrix  
  Abstract We demonstrate a large grid of individually addressable superconducting single photon detectors on a single chip. Each detector element is fully integrated into an independent waveguide circuit with custom functionality at telecom wavelengths. High device density is achieved by fabricating the nanowire detectors in traveling wave geometry directly on top of silicon-on-insulator waveguides. Our superconducting single photon detector matrix includes detector designs optimized for high detection efficiency, low dark count rate, and high timing accuracy. As an example, we exploit the high timing resolution of a particularly short nanowire design to resolve individual photon round-trips in a cavity ring-down measurement of a silicon ring resonator.  
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  ISSN (up) 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1373  
Permanent link to this record
 

 
Author Zolotov, P. I.; Semenov, A. V.; Divochiy, A. V.; Goltsman, G. N.; Romanov, N. R.; Klapwijk, T. M. url  doi
openurl 
  Title Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN Type Journal Article
  Year 2021 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 31 Issue 5 Pages 1-5  
  Keywords NbN SSPD, SNSPD  
  Abstract We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated.  
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  ISSN (up) 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1222  
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