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Korneeva, Y.; Sidorova, M.; Semenov, A.; Krasnosvobodtsev, S.; Mitsen, K.; Korneev, A.; Chulkova, G.; Goltsman, G. |
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Comparison of hot-spot formation in NbC and NbN single-photon detectors |
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2016 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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26 |
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3 |
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1-4 |
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NbC, NbN SSPD, SNSPD |
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We report an experimental investigation of the hot-spot evolution in superconducting single-photon detectors made of disordered superconducting materials with different diffusivity and energy downconversion time values, i.e., 33-nm-thick NbN and 23-nm-thick NbC films. We have demonstrated that, in NbC film, only 405-nm photons produce sufficiently large hot spot to trigger a single-photon response. The dependence of detection efficiency on bias current for 405-nm photons in NbC is similar to that for 3400-nm photons in NbN. In NbC, large diffusivity and downconversion time result in 1-D critical current suppression profile compared with the usual 2-D profile in NbN. |
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1051-8223 |
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1348 |
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Sobolewski, Roman; Xu, Ying; Zheng, Xuemei; Williams, Carlo; Zhang, Jin; Verevkin, Aleksandr; Chulkova, Galina; Korneev, Alexander; Lipatov, Andrey; Okunev, Oleg; Smirnov, Konstantin; Gol'tsman, Gregory N. |
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Spectral sensitivity of the NbN single-photon superconducting detector |
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2002 |
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IEICE Trans. Electron. |
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IEICE Trans. Electron. |
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E85-C |
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3 |
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797-802 |
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NbN SSPD, SNSPD |
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We report our studies on the spectral sensitivity of superconducting NbN thin-film single-photon detectors (SPD's) capable of GHz counting rates of visible and near-infrared photons. In particular, it has been shown that a NbN SPD is sensitive to 1.55-µm wavelength radiation and can be used for quantum communication. Our SPD's exhibit experimentally measured intrinsic quantum efficiencies from 20% at 800 nm up to 1% at 1.55-µm wavelength. The devices demonstrate picosecond response time (<100 ps, limited by our readout system) and negligibly low dark counts. Spectral dependencies of photon counting of continuous-wave, 0.4-µm to 3.5-µm radiation, and 0.63-µm, 1.33-µm, and 1.55-µm laser-pulsed radiations are presented for the single-stripe-type and meander-type devices. |
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1531 |
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Корнеев, А. А.; Минаева, О.; Рубцова, И.; Милостная, И.; Чулкова, Г.; Воронов, Б.; Смирнов, К.; Селезнёв, В.; Гольцман, Г.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Верёвкин, А.; Sobolewski, R. |
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Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN |
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2005 |
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Квантовая электроника |
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35 |
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8 |
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698-700 |
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NbN SSPD, SNSPD |
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Представлены результаты исследований сверхпроводящих однофотонных детекторов, изготовленных из ультратонкой пленки NbN. Развитие технологического процесса изготовления детекторов, а также снижение рабочей температуры до 2 К позволили существенно увеличить квантовую эффективность: для видимого света (λ = 0.56 мкм) она составила 30%–40%, т.е. достигла предела, определяемого коэффициентом поглощения пленки. С ростом длины волны квантовая эффективность экспоненциально падает, составляя ~20% на λ=1.55 мкм и ~0.02% на λ = 5 мкм. При скорости темнового счета ~10-4s-1 экспериментально измеренная эквивалентная мощность шума составила 1.5 × 10-20 Вт/Гц-1/2; в дальнейшем она может быть уменьшена до рекордно низкого значения 5 × 10-21 Вт/Гц-1/2. Временное разрешение детектора равно 30 пс. |
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Russian |
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Duplicated as 383 (Superconducting single-photon ultrathin NbN film detector) |
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382 |
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Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Gol'tsman, G.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Verevkin, A.; Sobolewski, R. |
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Superconducting single-photon ultrathin NbN film detector |
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2005 |
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Quantum Electronics |
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35 |
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8 |
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698-700 |
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NbN SSPD, SNSPD |
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Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps. |
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Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN |
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383 |
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Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. |
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Ultrafast superconducting single-photon optical detectors and their applications |
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2003 |
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IEEE Trans. Appl. Supercond. |
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13 |
Issue |
2 |
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1151-1157 |
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NbN SSPD, SNSPD |
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We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications. |
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