| Records |
| Author |
Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
| Title |
Influence of deposited material energy on superconducting properties of the WSi films |
Type |
Conference Article |
| Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
| Volume |
781 |
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Pages |
012013 (1 to 6) |
| Keywords |
WSi SSPD, SNSPD |
| Abstract |
WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. |
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1757-899X |
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1798 |
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Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K. |
| Title |
Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range |
Type |
Conference Article |
| Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
| Volume |
781 |
Issue |
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Pages |
012011 (1 to 5) |
| Keywords |
WSi, NbN SSPD, SNSPD |
| Abstract |
Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm. |
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1757-899X |
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1799 |
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Korneev, A.; Divochiy, A.; Tarkhov, M.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Gol'tsman, G. |
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New advanced generation of superconducting NbN-nanowire single-photon detectors capable of photon number resolving |
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Conference Article |
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2008 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
97 |
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012307 (1 to 6) |
| Keywords |
PNR SSPD; SNSPD |
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We present our latest generation of ultrafast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). We have developed, fabricated and tested a multi-sectional design of NbN nanowire structures. The novel SSPD structures consist of several meander sections connected in parallel, each having a resistor connected in series. The novel SSPDs combine 10 μm × 10 μm active areas with a low kinetic inductance and PNR capability. That resulted in a significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector's response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performances of the PNR SSPDs. The PNR SSPDs are perfectly suited for fibreless free-space telecommunications, as well as for ultrafast quantum cryptography and quantum computing. |
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1742-6596 |
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1245 |
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Casaburi, A.; Ejrnaes, M.; Quaranta, O.; Gaggero, A.; Mattioli, F.; Leoni, R.; Voronov, B.; Gol'tsman, G.; Lisitskiy, M.; Esposito, E.; Nappi, C.; Cristiano, R.; Pagano, S. |
| Title |
Experimental characterization of NbN nanowire optical detectors with parallel stripline configuration |
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Conference Article |
| Year |
2008 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
97 |
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Pages |
012265 (1 to 6) |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We have developed a novel geometrical configuration for NbN-based superconducting single photon optical detector (SSPD) that achieves two goals: a much lower intrinsic impedance, and a consequently greater bandwidth, and a much larger signal amplitude compared to the standard meandered configuration. This has been obtained by implementing a properly designed parallel stripline structure where a cascade switching mechanism occurs when one of the striplines is hit by an optical photon. The overall switching occurs synchronously and in a very short time, giving rise to a strong and fast voltage pulse. The SSPD have been realized using state of the art NbN deposition technology and e-beam lithography. The strips are 100 nm wide and 5 μm long and have been realized with 4 nm NbN film on sapphire and Si substrate. We report on experimental characterization of such novel devices. The performances of the proposed novel type of SSPD are compared with standard SSPD design and results in terms of signal amplitude, risetime and effective detection area. |
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IOP Publishing |
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1742-6596 |
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8th European Conference on Applied Superconductivity (EUCAS 2007) |
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1416 |
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Seleznev, V. A.; Divochiy, A. V.; Vakhtomin, Y. B.; Morozov, P. V.; Zolotov, P. I.; Vasil'ev, D. D.; Moiseev, K. M.; Malevannaya, E. I.; Smirnov, K. V. |
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Superconducting detector of IR single-photons based on thin WSi films |
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Conference Article |
| Year |
2016 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
737 |
Issue |
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Pages |
012032 |
| Keywords |
WSi SSPD, SNSPD, NEP |
| Abstract |
We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP). |
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1742-6588 |
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1235 |
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