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Ferrari, S.; Kovalyuk, V.; Hartmann, W.; Vetter, A.; Kahl, O.; Lee, C.; Korneev, A.; Rockstuhl, C.; Gol'tsman, G.; Pernice, W. |
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Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors |
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Journal Article |
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2017 |
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Opt. Express |
Abbreviated Journal |
Opt. Express |
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25 |
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8 |
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8739-8750 |
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SSPD, SNSPD, photon counting; Infrared; Quantum detectors; Integrated optics; Multiphoton processes; Photon statistics |
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We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions. |
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RPLAB @ kovalyuk @ |
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1118 |
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Driessen, E. F. C.; Braakman, F. R.; Reiger, E. M.; Dorenbos, S. N.; Zwiller, V.; de Dood, M. J. A. |
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Title |
Impedance model for the polarization-dependent optical absorption of superconducting single-photon detectors |
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Journal Article |
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2009 |
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Eur. Phys. J. Appl. Phys. |
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47 |
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10701 |
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SSPD, SNSPD |
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We measured the single-photon detection efficiency of NbN superconducting single-photon detectors as a function of the polarization state of the incident light for different wavelengths in the range from 488 nm to 1550 nm. The polarization contrast varies from ~% at 488 nm to~0% at 1550 nm, in good agreement with numerical calculations. We use an optical-impedance model to describe the absorption for polarization parallel to the wires of the detector. For the extremely lossy NbN material, the absorption can be kept constant by keeping the product of layer thickness and filling factor constant. As a consequence, the maximum possible absorption is independent of filling factor. By illuminating the detector through the substrate, an absorption efficiency of ~0% can be reached for a detector on Si or GaAs, without the need for an optical cavity. |
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RPLAB @ alex_kazakov @ |
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1062 |
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Rosfjord, K. M.; Yang, J. K. W.; Dauler, E. A.; Anant, V.; Berggren, K. K.; Kerman, A. J.; Voronov, B. M.; Gol’tsman, G. N. |
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Increased detection efficiencies of nanowire single-photon detectors by integration of an optical cavity and anti-reflection coating |
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2006 |
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CLEO/QELS |
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CLEO/QELS |
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JTuF2 (1 to 2) |
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SSPD, SNSPD |
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We fabricate and test superconducting NbN-nanowire single-photon detectors with an integrated optical cavity and anti-reflection coating. We design the cavity and coating such as to maximize absorption in the NbN film of the detector. |
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2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference |
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1452 |
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Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
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Influence of deposited material energy on superconducting properties of the WSi films |
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Conference Article |
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2020 |
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IOP Conf. Ser.: Mater. Sci. Eng. |
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IOP Conf. Ser.: Mater. Sci. Eng. |
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781 |
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012013 (1 to 6) |
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WSi SSPD, SNSPD |
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WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. |
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1757-899X |
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1798 |
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Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Lubenchenko, A. V.; Morozov, P. V.; Shurkaeva, I. V.; Smirnov, K. V. |
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Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051030 |
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SSPD, SNSPD, VN |
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We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors. |
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1742-6588 |
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1228 |
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