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Author Sprengers, J. P.; Gaggero, A.; Sahin, D.; Jahanmirinejad, S.; Frucci, G.; Mattioli, F.; Leoni, R.; Beetz, J.; Lermer, M.; Kamp, M.; Höfling, S.; Sanjines, R.; Fiore A.
Title Waveguide superconducting single-photon detectors for integrated quantum photonic circuits Type Journal Article
Year 2011 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 99 Issue 18 Pages (down) 181110(1-3)
Keywords optical waveguides, waveguide SSPD
Abstract The monolithic integration of single-photon sources, passive optical circuits, and single-photon detectors enables complex and scalable quantum photonic integrated circuits, for application in linear-optics quantum computing and quantum communications. Here, we demonstrate a key component of such a circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (~0%) at telecom wavelengths, high timing accuracy (~0 ps), and response time in the ns range and are fully compatible with the integration of single-photon sources, passive networks, and modulators.
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Call Number Serial 847
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Author Kahl, O.; Ferrari, S.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P.
Title Waveguide integrated superconducting single-photon detectors with high internal quantum efficiency at telecom wavelengths Type Journal Article
Year 2015 Publication Sci. Rep. Abbreviated Journal Sci. Rep.
Volume 5 Issue Pages (down) 10941 (1 to 11)
Keywords optical waveguides; waveguide integrated SSPD; waveguide SSPD; nanophotonics
Abstract Superconducting nanowire single-photon detectors (SNSPDs) provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, compatibility with an integrated optical platform is a crucial requirement for applications in emerging quantum photonic technologies. Here we present efficiencies close to unity at 1550nm wavelength. This allows for the SNSPDs to be operated at bias currents far below the critical current where unwanted dark count events reach milli-Hz levels while on-chip detection efficiencies above 70% are maintained. The measured dark count rates correspond to noiseequivalent powers in the 10–19W/Hz–1/2 range and the timing jitter is as low as 35ps. Our detectors are fully scalable and interface directly with waveguide-based optical platforms.
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Notes PMID:26061283; PMCID:PMC4462017 Approved no
Call Number RPLAB @ kovalyuk @ Serial 946
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Author Lee, B. G.; Assefa, S.; Green, W. M. J.; Min Yang; Schow, C. L.; Jahnes, C. V.; Sheng Zhang; Singer, J.; Kopp, V. I.; Kash, J. A.; Vlasov, Y. A.
Title Multichannel high-bandwidth coupling of ultradense silicon photonic waveguide array to standard-pitch fiber array Type Journal Article
Year 2011 Publication J. Lightwave Technol. Abbreviated Journal
Volume 29 Issue 4 Pages (down) 475-482
Keywords optical waveguides, from chiralphotonics
Abstract A multichannel tapered coupler interfacing standard 250-μm-pitch low-numerical-aperture (NA) polarization-maintaining fiber arrays with ultradense 20- μm-pitch high-NA silicon waveguides is designed and fabricated. The coupler is based on an array of 12 dual-core glass waveguides on 250-μ m pitch that are tapered to a 20- μm pitch, simultaneously providing both pitch and spot-size conversion. At the wide end, the inner core matches the NA and mode profile of standard single-mode fiber. When drawn and tapered, the inner core “vanishes” and the outer core, surrounded by the clad, matches the NA and mode profile of the on-chip photonic waveguide. Ultradense high-efficiency coupling to an array of Si photonic waveguides is demonstrated using a 12-channel polarization-maintaining-fiber pigtailed tapered coupler. Coupling to Si waveguides is facilitated using SiON spot-size converters integrated into the Si photonic IC to provide 2-3-μm mode field diameters compatible with the tapered coupler. The tapered coupler achieves <; 1 dB coupling losses to photonic waveguides. Furthermore, eight-channel coupling is shown with less than -35 dB crosstalk between channels. Finally, a 640-Gb/s wavelength-division-multiplexing signal is coupled into four waveguides occupying 80 μm of chip edge, providing 160-Gb/s per-channel bandwidths.
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Notes Approved no
Call Number Serial 849
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Author Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A.
Title Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures Type Abstract
Year 2019 Publication Proc. Amorphous and Nanostructured Chalcogenides Abbreviated Journal Proc. Amorphous and Nanostructured Chalcogenides
Volume Issue Pages (down) 47-48
Keywords optical waveguides
Abstract The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.
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Publisher Technical University of Moldova Place of Publication Editor
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Notes Poster Approved no
Call Number Serial 1281
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Author Pernice, W.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X.
Title High speed and high efficiency travelling wave single-photon detectors embedded in nanophotonic circuits Type Miscellaneous
Year 2012 Publication arXiv Abbreviated Journal arXiv
Volume 1108.5299 Issue Pages (down) 1-23
Keywords optical waveguides, waveguide SSPD, guantum photonics, jitter, detection efficiency
Abstract Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides which allows us to drastically increase the absorption length for incoming photons. When operating the detectors close to the critical current we achieve high on-chip single photon detection efficiency up to 91% at telecom wavelengths, with uncertainty dictated by the variation of the waveguide photon flux. We also observe remarkably low dark count rates without significant compromise of detection efficiency. Furthermore, our detectors are fully embedded in a scalable silicon photonic circuit and provide ultrashort timing jitter of 18ps. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics.
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Notes Approved no
Call Number Serial 845
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