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Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. |
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Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm |
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Journal Article |
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2010 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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97 |
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13 |
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131907 (1 to 3) |
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SSPD, SNSPD, InAsP/InP quantum dots |
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By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364. |
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0003-6951 |
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1238 |
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Heeres, R.W.; Dorenbos, S.N.; Koene, B.; Solomon, G.S.; Kouwenhoven, L.P.; Zwiller, V. |
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Title |
On-Chip Single Plasmon Detection |
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Journal Article |
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2010 |
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Nano Letters |
Abbreviated Journal |
Nano Lett. |
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10 |
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661-664 |
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optical antennas; SSPD; Single surface plasmons; superconducting detectors; semiconductor quantum dots; nanophotonics |
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Surface plasmon polaritons (plasmons) have the potential to interface electronic and optical devices. They could prove extremely useful for integrated quantum information processing. Here we demonstrate on-chip electrical detection of single plasmons propagating along gold waveguides. The plasmons are excited using the single-photon emission of an optically emitting quantum dot. After propagating for several micrometers, the plasmons are coupled to a superconducting detector in the near-field. Correlation measurements prove that single plasmons are being detected. |
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RPLAB @ akorneev @ |
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620 |
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Mitin, Vladimir; Antipov, Andrei; Sergeev, Andrei; Vagidov, Nizami; Eason, David; Strasser, Gottfried |
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Title |
Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers |
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Journal Article |
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2011 |
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Nanoscale Research Letters |
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Nanoscale res lett |
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6 |
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1 |
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6 |
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Quantum dots; Infrared detectors; Photoresponse; Doping; Potential barriers; Capture processes |
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Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV. |
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RPLAB @ gujma @ |
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712 |
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Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. |
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Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid |
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Journal Article |
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2020 |
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J. Luminescence |
Abbreviated Journal |
J. Luminescence |
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220 |
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117008 (1 to 7) |
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Ag2S QD, quantum dots |
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The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA. |
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0022-2313 |
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1267 |
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Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Room temperature silicon detector for IR range coated with Ag2S quantum dots |
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Conference Article |
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2019 |
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IRMMW-THz |
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Ag2S quantum dots |
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A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications. |
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2162-2035 |
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978-1-5386-8285-2 |
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8874267 |
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1286 |
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