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| Author | Lee, B. G.; Doany, F. E.; Assefa, S.; Green, W.; Yang, M.; Schow, C. L.; Jahnes, C. V.; Zhang, S.; Singer, J.; Kopp, V. I.; Kash, J. A.; Vlasov, Y. A. | ||||
| Title | 20-μm-pitch eight-channel monolithic fiber array coupling 160 Gb/s/channel to silicon nanophotonic chip | Type | Conference Article | ||
| Year | 2010 | Publication | Conf. OFC/NFOEC | Abbreviated Journal | Conf. OFC/NFOEC |
| Volume | Issue | Pages | 1-3 | ||
| Keywords | spot size converters, SSC, optical waveguides, optical fiber waveguides, ultra-dense silicon waveguide arrays, silicon waveguides, waveguide arrays, from chiralphotonics | ||||
| Abstract | A multichannel tapered coupler interfacing standard 250-μm-pitch low-NA polarization-maintaining fiber arrays with ultra-dense 20-μm-pitch high-NA silicon waveguides is designed, fabricated, and tested, demonstrating coupling losses below 1 dB and injection bandwidths of 160 Gb/s/channel. | ||||
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| Area | Expedition | Conference | Conference on optical fiber communication, collocated national fiber optic engineers conference | ||
| Notes | Approved | no | |||
| Call Number | Serial | 852 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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ISBN | Medium | |||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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| Author | Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Silicon room temperature IR detectors coated with Ag2S quantum dots | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
| Volume | Issue | Pages | 369-371 | ||
| Keywords | silicon detector, quantum dot, IR, surface states | ||||
| Abstract | For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. | ||||
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ISBN | 978-5-89513-451-1 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1154 | |||
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| Author | Trifonov, Andrey; Tong, C. Edward; Lobanov, Yury; Kaurova, Natalia; Blundell, Raymond; Gol’tsman, Gregory | ||||
| Title | An investigation of the DC and IF performance of silicon-membrane HEB mixer elements | Type | Conference Article | ||
| Year | 2015 | Publication | Proc. 26th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 26th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 40 | ||
| Keywords | silicon-membrane HEB waveguide mixer | ||||
| Abstract | We report on our initial development towards a 2x2 multi-pixel HEB waveguide mixer for operation at 1.4 THz. We have successfully fabricated devices comprising an NbN bridge integrated with antenna test structure using a silicon membrane as the supporting substrate. DC measurements of the test chips demonstrate critical current from 0.1 – 1mA depending on the size of device, with T c of around 10 K and ΔTc ~ 0.8 K. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1160 | |||
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| Author | Bakhvalova, T.; Belkin, M. E.; Kovalyuk, V. V.; Prokhodtcov, A. I.; Goltsman, G. N.; Sigov, A. S. | ||||
| Title | Studying key principles for design and fabrication of silicon photonic-based beamforming networks | Type | Conference Article | ||
| Year | 2019 | Publication | PIERS-Spring | Abbreviated Journal | PIERS-Spring |
| Volume | Issue | Pages | 745-751 | ||
| Keywords | silicon photonics, TriPleX platform | ||||
| Abstract | In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array. | ||||
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| Notes | Approved | no | |||
| Call Number | 9017646 | Serial | 1186 | ||
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